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70T653MS12BC

HIGH-SPEED2.5V512Kx36ASYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3V0R2.5VINTERFACE

Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:12ns(max.) ◆RapidWriteModesimplifieshigh-speedconsecutivewrite cycles ◆Dualchipenablesallowfordepthexpansionwi

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

70T653MS12BCG

HIGH-SPEED2.5V512Kx36ASYNCHRONOUSDUAL-PORTSTATICRAM

IDT

Integrated Device Technology, Inc.

70T653MS12BCG

HIGH-SPEEDASYNCHRONOUSDUAL-PORTSTATICRAM

IDT

Integrated Device Technology, Inc.

70T653MS12BCGI

HIGH-SPEED2.5V512Kx36ASYNCHRONOUSDUAL-PORTSTATICRAM

IDT

Integrated Device Technology, Inc.

70T653MS12BCGI

HIGH-SPEEDASYNCHRONOUSDUAL-PORTSTATICRAM

IDT

Integrated Device Technology, Inc.

70T653MS12BCGI

HIGH-SPEED2.5V512Kx36ASYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3V0R2.5VINTERFACE

Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:12ns(max.) ◆RapidWriteModesimplifieshigh-speedconsecutivewrite cycles ◆Dualchipenablesallowfordepthexpansionwi

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

70T653MS12BCI

HIGH-SPEED2.5V512Kx36ASYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3V0R2.5VINTERFACE

Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:12ns(max.) ◆RapidWriteModesimplifieshigh-speedconsecutivewrite cycles ◆Dualchipenablesallowfordepthexpansionwi

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

IDT70T653MS12BC

HIGH-SPEED2.5V512Kx36ASYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3V0R2.5VINTERFACE

Description TheIDT70T653Misahigh-speed512Kx36AsynchronousDual-PortStaticRAM.TheIDT70T653Misdesignedtobeusedasastand-alone18874K-bitDual-PortRAM.Thisdeviceprovidestwoindependentportswithseparatecontrol,address,andI/Opinsthatpermitindependent,asynchronousac

IDT

Integrated Device Technology, Inc.

IDT70T653MS12BCI

HIGH-SPEED2.5V512Kx36ASYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3V0R2.5VINTERFACE

Description TheIDT70T653Misahigh-speed512Kx36AsynchronousDual-PortStaticRAM.TheIDT70T653Misdesignedtobeusedasastand-alone18874K-bitDual-PortRAM.Thisdeviceprovidestwoindependentportswithseparatecontrol,address,andI/Opinsthatpermitindependent,asynchronousac

IDT

Integrated Device Technology, Inc.

詳細(xì)參數(shù)

  • 型號：

    IDT70T653MS12BCGI

  • 功能描述：

    IC SRAM 18MBIT 12NS 256BGA

  • RoHS：

    是

  • 類別：

    集成電路(IC) >> 存儲器

  • 系列：

    -

  • 標(biāo)準(zhǔn)包裝：

    3,000

  • 系列：

    - 格式 -

  • 存儲器：

    EEPROMs - 串行

  • 存儲器類型：

    EEPROM

  • 存儲容量：

    8K(1K x 8)

  • 速度：

    400kHz

  • 接口：

    I²C，2 線串口

  • 電源電壓：

    1.7 V ~ 5.5 V

  • 工作溫度：

    -40°C ~ 85°C

  • 封裝/外殼：

    8-SOIC（0.154，3.90mm 寬）

  • 供應(yīng)商設(shè)備封裝：

    8-SOIC

  • 包裝：

    帶卷(TR)

供應(yīng)商型號品牌批號封裝庫存備注價格
IDT
24+
BGA
23000
免費(fèi)送樣原盒原包現(xiàn)貨一手渠道聯(lián)系
 詢價
IDT
23+
256-CABGA(17x17)
36430
專業(yè)分銷產(chǎn)品!原裝正品!價格優(yōu)勢!
 詢價
IDT
16+
NA
8800
原裝現(xiàn)貨,貨真價優(yōu)
 詢價
IDT
2021+
BGA
2950
只做原裝假一罰十
 詢價
IDT
2018+
SMD
9
“芯達(dá)集團(tuán)”專營軍工百分之百原裝進(jìn)口
 詢價
IDT
13+
BGA
1350
全新進(jìn)口原裝
 詢價
IDT
20+
BGA
35830
原裝優(yōu)勢主營型號-可開原型號增稅票
 詢價
IDT
22+
256-LBGA
10000
原裝正品優(yōu)勢現(xiàn)貨供應(yīng)
 詢價
IDT
19+
BGA
35210
原裝現(xiàn)貨/放心購買
 詢價
IDT
22+
BGA256
9852
只做原裝正品現(xiàn)貨!或訂貨假一賠十!
 詢價
更多IDT70T653MS12BCGI供應(yīng)商 更新時間2024-11-20 16:40:00

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