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2SJ606

MOSFIELDEFFECTTRANSISTOR

SWITCHING P-CHANNELPOWERMOSFET DESCRIPTION The2SJ606isP-channelMOSFieldEffectTransistordesigned forhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=15mΩMAX.(VGS=?10V,ID=?42A) RDS(on)2=23mΩMAX.(VGS=?4.0V,ID=?42A)

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SJ606

MOSFieldEffectTransistor

Features ●Lowon-resistance RDS(on)1=15mMAX.(VGS=-10V,ID=-42A) RDS(on)2=23mMAX.(VGS=-4.0V,ID=-42A) ●LowCiss:Ciss=4800pFTYP. ●Built-ingateprotectiondiode

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實業(yè)有限公司

2SJ606

MOSFIELDEFFECTTRANSISTOR

DESCRIPTION The2SJ606isP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=15m?MAX.(VGS=?10V,ID=?42A) RDS(on)2=23m?MAX.(VGS=?4.0V,ID=?42A) ?Lowinputcapacitance: Ciss=4800pF

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

2SJ606-S

MOSFIELDEFFECTTRANSISTOR

SWITCHING P-CHANNELPOWERMOSFET DESCRIPTION The2SJ606isP-channelMOSFieldEffectTransistordesigned forhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=15mΩMAX.(VGS=?10V,ID=?42A) RDS(on)2=23mΩMAX.(VGS=?4.0V,ID=?42A)

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SJ606-S

MOSFIELDEFFECTTRANSISTOR

DESCRIPTION The2SJ606isP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=15m?MAX.(VGS=?10V,ID=?42A) RDS(on)2=23m?MAX.(VGS=?4.0V,ID=?42A) ?Lowinputcapacitance: Ciss=4800pF

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

2SJ606-Z

MOSFIELDEFFECTTRANSISTOR

SWITCHING P-CHANNELPOWERMOSFET DESCRIPTION The2SJ606isP-channelMOSFieldEffectTransistordesigned forhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=15mΩMAX.(VGS=?10V,ID=?42A) RDS(on)2=23mΩMAX.(VGS=?4.0V,ID=?42A)

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SJ606-Z

MOSFIELDEFFECTTRANSISTOR

DESCRIPTION The2SJ606isP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=15m?MAX.(VGS=?10V,ID=?42A) RDS(on)2=23m?MAX.(VGS=?4.0V,ID=?42A) ?Lowinputcapacitance: Ciss=4800pF

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

2SJ606-ZJ

MOSFIELDEFFECTTRANSISTOR

SWITCHING P-CHANNELPOWERMOSFET DESCRIPTION The2SJ606isP-channelMOSFieldEffectTransistordesigned forhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=15mΩMAX.(VGS=?10V,ID=?42A) RDS(on)2=23mΩMAX.(VGS=?4.0V,ID=?42A)

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SJ606-ZJ

P-ChannelMOSFET

■Features ●VDS(V)=-60V ●ID=-83A ●RDS(ON)

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實業(yè)有限公司

2SJ606-ZJ

MOSFIELDEFFECTTRANSISTOR

DESCRIPTION The2SJ606isP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=15m?MAX.(VGS=?10V,ID=?42A) RDS(on)2=23m?MAX.(VGS=?4.0V,ID=?42A) ?Lowinputcapacitance: Ciss=4800pF

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

詳細(xì)參數(shù)

  • 型號：

    2SJ606-Z(AZ)

  • 制造商：

    Renesas Electronics

  • 功能描述：

    Cut Tape

供應(yīng)商型號品牌批號封裝庫存備注價格
RENESAS/瑞薩
23+
5177
深圳現(xiàn)貨
 詢價
RENESAS(瑞薩)/IDT
23+
7350
現(xiàn)貨供應(yīng),當(dāng)天可交貨!免費送樣,原廠技術(shù)支持!!!
 詢價
RENESAS(瑞薩)/IDT
23+
6000
誠信服務(wù)，絕對原裝原盤
 詢價
RENESAS
24+
con
35960
查現(xiàn)貨到京北通宇商城
 詢價
RENESAS
24+
con
35960
查現(xiàn)貨到京北通宇商城
 詢價
NEC
24+
TO263
5000
全現(xiàn)原裝公司現(xiàn)貨
 詢價
NEC
22+23+
TO263
75204
絕對原裝正品現(xiàn)貨,全新深圳原裝進(jìn)口現(xiàn)貨
 詢價
NEC
23+
TO263
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
NEC
2022
TO263
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
 詢價
NEC
23+
NA/
3327
原裝現(xiàn)貨,當(dāng)天可交貨,原型號開票
 詢價
更多2SJ606-Z(AZ)供應(yīng)商 更新時間2025-1-15 10:38:00

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