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2SJ606-S

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The2SJ606isP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=15m?MAX.(VGS=?10V,ID=?42A) RDS(on)2=23m?MAX.(VGS=?4.0V,ID=?42A) ?Lowinputcapacitance: Ciss=4800pF

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

2SJ606-S

MOS FIELD EFFECT TRANSISTOR

SWITCHING P-CHANNELPOWERMOSFET DESCRIPTION The2SJ606isP-channelMOSFieldEffectTransistordesigned forhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=15mΩMAX.(VGS=?10V,ID=?42A) RDS(on)2=23mΩMAX.(VGS=?4.0V,ID=?42A)

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SJ606

MOSFIELDEFFECTTRANSISTOR

SWITCHING P-CHANNELPOWERMOSFET DESCRIPTION The2SJ606isP-channelMOSFieldEffectTransistordesigned forhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=15mΩMAX.(VGS=?10V,ID=?42A) RDS(on)2=23mΩMAX.(VGS=?4.0V,ID=?42A)

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SJ606

MOSFieldEffectTransistor

Features ●Lowon-resistance RDS(on)1=15mMAX.(VGS=-10V,ID=-42A) RDS(on)2=23mMAX.(VGS=-4.0V,ID=-42A) ●LowCiss:Ciss=4800pFTYP. ●Built-ingateprotectiondiode

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實業(yè)有限公司

2SJ606

MOSFIELDEFFECTTRANSISTOR

DESCRIPTION The2SJ606isP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=15m?MAX.(VGS=?10V,ID=?42A) RDS(on)2=23m?MAX.(VGS=?4.0V,ID=?42A) ?Lowinputcapacitance: Ciss=4800pF

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

2SJ606-Z

MOSFIELDEFFECTTRANSISTOR

SWITCHING P-CHANNELPOWERMOSFET DESCRIPTION The2SJ606isP-channelMOSFieldEffectTransistordesigned forhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=15mΩMAX.(VGS=?10V,ID=?42A) RDS(on)2=23mΩMAX.(VGS=?4.0V,ID=?42A)

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SJ606-Z

MOSFIELDEFFECTTRANSISTOR

DESCRIPTION The2SJ606isP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=15m?MAX.(VGS=?10V,ID=?42A) RDS(on)2=23m?MAX.(VGS=?4.0V,ID=?42A) ?Lowinputcapacitance: Ciss=4800pF

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

2SJ606-ZJ

MOSFIELDEFFECTTRANSISTOR

SWITCHING P-CHANNELPOWERMOSFET DESCRIPTION The2SJ606isP-channelMOSFieldEffectTransistordesigned forhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=15mΩMAX.(VGS=?10V,ID=?42A) RDS(on)2=23mΩMAX.(VGS=?4.0V,ID=?42A)

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SJ606-ZJ

P-ChannelMOSFET

■Features ●VDS(V)=-60V ●ID=-83A ●RDS(ON)

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實業(yè)有限公司

2SJ606-ZJ

MOSFIELDEFFECTTRANSISTOR

DESCRIPTION The2SJ606isP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=15m?MAX.(VGS=?10V,ID=?42A) RDS(on)2=23m?MAX.(VGS=?4.0V,ID=?42A) ?Lowinputcapacitance: Ciss=4800pF

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

詳細(xì)參數(shù)

  • 型號：

    2SJ606-S

  • 制造商：

    NEC

  • 制造商全稱：

    NEC

  • 功能描述：

    MOS FIELD EFFECT TRANSISTOR

供應(yīng)商型號品牌批號封裝庫存備注價格
NEC
24+
TO-262
8866
詢價
NEC
23+
TO-262
12167
全新原裝
 詢價
NEC
24+
TO-262
16800
絕對原裝進(jìn)口現(xiàn)貨,假一賠十,價格優(yōu)勢!?
 詢價
NEC
22+
TO-262
6000
十年配單,只做原裝
 詢價
NEC
22+
TO-262
25000
只做原裝進(jìn)口現(xiàn)貨,專注配單
 詢價
NEC
24+
8858
公司原廠原裝現(xiàn)貨假一罰十!特價出售!強(qiáng)勢庫存!
 詢價
INFINEON/英飛凌
23+
TO-263
69820
終端可以免費供樣,支持BOM配單!
 詢價
NEC
24+
6540
原裝現(xiàn)貨/歡迎來電咨詢
 詢價
RENESAS
24+
TO-263
12300
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證
 詢價
RENESAS/瑞薩
23+
5177
深圳現(xiàn)貨
 詢價
更多2SJ606-S供應(yīng)商 更新時間2025-3-22 14:30:00

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