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2SJ606

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The2SJ606isP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=15m?MAX.(VGS=?10V,ID=?42A) RDS(on)2=23m?MAX.(VGS=?4.0V,ID=?42A) ?Lowinputcapacitance: Ciss=4800pF

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

2SJ606

MOS Field Effect Transistor

Features ●Lowon-resistance RDS(on)1=15mMAX.(VGS=-10V,ID=-42A) RDS(on)2=23mMAX.(VGS=-4.0V,ID=-42A) ●LowCiss:Ciss=4800pFTYP. ●Built-ingateprotectiondiode

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實(shí)業(yè)有限公司

2SJ606

MOS FIELD EFFECT TRANSISTOR

SWITCHING P-CHANNELPOWERMOSFET DESCRIPTION The2SJ606isP-channelMOSFieldEffectTransistordesigned forhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=15mΩMAX.(VGS=?10V,ID=?42A) RDS(on)2=23mΩMAX.(VGS=?4.0V,ID=?42A)

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SJ606-S

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The2SJ606isP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=15m?MAX.(VGS=?10V,ID=?42A) RDS(on)2=23m?MAX.(VGS=?4.0V,ID=?42A) ?Lowinputcapacitance: Ciss=4800pF

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

2SJ606-S

MOS FIELD EFFECT TRANSISTOR

SWITCHING P-CHANNELPOWERMOSFET DESCRIPTION The2SJ606isP-channelMOSFieldEffectTransistordesigned forhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=15mΩMAX.(VGS=?10V,ID=?42A) RDS(on)2=23mΩMAX.(VGS=?4.0V,ID=?42A)

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SJ606-Z

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The2SJ606isP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=15m?MAX.(VGS=?10V,ID=?42A) RDS(on)2=23m?MAX.(VGS=?4.0V,ID=?42A) ?Lowinputcapacitance: Ciss=4800pF

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

2SJ606-Z

MOS FIELD EFFECT TRANSISTOR

SWITCHING P-CHANNELPOWERMOSFET DESCRIPTION The2SJ606isP-channelMOSFieldEffectTransistordesigned forhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=15mΩMAX.(VGS=?10V,ID=?42A) RDS(on)2=23mΩMAX.(VGS=?4.0V,ID=?42A)

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SJ606-ZJ

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The2SJ606isP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=15m?MAX.(VGS=?10V,ID=?42A) RDS(on)2=23m?MAX.(VGS=?4.0V,ID=?42A) ?Lowinputcapacitance: Ciss=4800pF

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

2SJ606-ZJ

P-Channel MOSFET

■Features ●VDS(V)=-60V ●ID=-83A ●RDS(ON)

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實(shí)業(yè)有限公司

2SJ606-ZJ

MOS FIELD EFFECT TRANSISTOR

SWITCHING P-CHANNELPOWERMOSFET DESCRIPTION The2SJ606isP-channelMOSFieldEffectTransistordesigned forhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=15mΩMAX.(VGS=?10V,ID=?42A) RDS(on)2=23mΩMAX.(VGS=?4.0V,ID=?42A)

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SJ606_15

MOS FIELD EFFECT TRANSISTOR

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    2SJ606

  • 制造商：

    KEXIN

  • 制造商全稱：

    Guangdong Kexin Industrial Co.,Ltd

  • 功能描述：

    MOS Field Effect Transistor

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
NEC
23+
TO-220
35890
詢價(jià)
NEC
2339+
8858
公司原廠原裝現(xiàn)貨假一罰十!特價(jià)出售!強(qiáng)勢(shì)庫(kù)存!
 詢價(jià)
NEC
24+
TO-220AB
20000
詢價(jià)
NEC
23+
TO-220AB
12098
全新原裝
 詢價(jià)
KEXIN
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
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NEC
21+
TO-263
12588
原裝正品,自己庫(kù)存 假一罰十
 詢價(jià)
NEC
24+
TO-263
16800
絕對(duì)原裝進(jìn)口現(xiàn)貨,假一賠十,價(jià)格優(yōu)勢(shì)!?
 詢價(jià)
NEC
24+
6540
原裝現(xiàn)貨/歡迎來(lái)電咨詢
 詢價(jià)
NEC
21+
TO-220
30000
只做正品原裝現(xiàn)貨
 詢價(jià)
NEC
22+
TO-220
9600
原裝現(xiàn)貨,優(yōu)勢(shì)供應(yīng),支持實(shí)單!
 詢價(jià)
更多2SJ606供應(yīng)商 更新時(shí)間2025-1-15 14:00:00

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