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2SJ607-Z

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The2SJ607isP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=11m?MAX.(VGS=?10V,ID=?42A) RDS(on)2=16m?MAX.(VGS=?4.0V,ID=?42A) ?Lowinputcapacitance: Ciss=

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

2SJ607-Z

MOS FIELD EFFECT TRANSISTOR

SWITCHING P-CHANNELPOWERMOSFET DESCRIPTION The2SJ607isP-channelMOSFieldEffectTransistordesigned forhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=11mΩMAX.(VGS=?10V,ID=?42A) RDS(on)2=16mΩMAX.(VGS=?4.0V,ID=?42A)

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SJ607-ZJ

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The2SJ607isP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=11m?MAX.(VGS=?10V,ID=?42A) RDS(on)2=16m?MAX.(VGS=?4.0V,ID=?42A) ?Lowinputcapacitance: Ciss=

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

2SJ607-ZJ

P-Channel MOSFET

■Features ●VDS(V)=-60V ●ID=-83A ●RDS(ON)

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實(shí)業(yè)有限公司

2SJ607-ZJ

MOS FIELD EFFECT TRANSISTOR

SWITCHING P-CHANNELPOWERMOSFET DESCRIPTION The2SJ607isP-channelMOSFieldEffectTransistordesigned forhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=11mΩMAX.(VGS=?10V,ID=?42A) RDS(on)2=16mΩMAX.(VGS=?4.0V,ID=?42A)

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SJ607

MOSFIELDEFFECTTRANSISTOR

SWITCHING P-CHANNELPOWERMOSFET DESCRIPTION The2SJ607isP-channelMOSFieldEffectTransistordesigned forhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=11mΩMAX.(VGS=?10V,ID=?42A) RDS(on)2=16mΩMAX.(VGS=?4.0V,ID=?42A)

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SJ607

MOSFieldEffectTransistor

Features ●Lowon-resistance RDS(on)1=11mΩMAX.(VGS=-10V,ID=-42A) RDS(on)2=16mΩMAX.(VGS=-4.0V,ID=-42A) ●LowCiss:Ciss=7500pFTYP. ●Built-ingateprotectiondiode

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實(shí)業(yè)有限公司

2SJ607

MOSFIELDEFFECTTRANSISTOR

DESCRIPTION The2SJ607isP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=11m?MAX.(VGS=?10V,ID=?42A) RDS(on)2=16m?MAX.(VGS=?4.0V,ID=?42A) ?Lowinputcapacitance: Ciss=

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

2SJ607-S

MOSFIELDEFFECTTRANSISTOR

SWITCHING P-CHANNELPOWERMOSFET DESCRIPTION The2SJ607isP-channelMOSFieldEffectTransistordesigned forhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=11mΩMAX.(VGS=?10V,ID=?42A) RDS(on)2=16mΩMAX.(VGS=?4.0V,ID=?42A)

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SJ607-S

MOSFIELDEFFECTTRANSISTOR

DESCRIPTION The2SJ607isP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=11m?MAX.(VGS=?10V,ID=?42A) RDS(on)2=16m?MAX.(VGS=?4.0V,ID=?42A) ?Lowinputcapacitance: Ciss=

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

詳細(xì)參數(shù)

  • 型號(hào)：

    2SJ607-Z

  • 制造商：

    NEC

  • 制造商全稱(chēng)：

    NEC

  • 功能描述：

    MOS FIELD EFFECT TRANSISTOR

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
NEC
23+
TO-263
35890
詢(xún)價(jià)
NEC
24+
TO263-3
674
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NEC
2339+
8858
公司原廠原裝現(xiàn)貨假一罰十!特價(jià)出售!強(qiáng)勢(shì)庫(kù)存!
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NEC
2003+
TO263-3
659
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NEC
24+
TO-263
90000
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NEC
24+
TO-263
16800
絕對(duì)原裝進(jìn)口現(xiàn)貨,假一賠十,價(jià)格優(yōu)勢(shì)!?
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NEC
24+
6540
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NEC
21+
TO-263
30000
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RENESAS/瑞薩
23+
TO-263
10000
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RENESAS/瑞薩
2022+
TO-263
50000
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更多2SJ607-Z供應(yīng)商 更新時(shí)間2025-1-15 17:16:00

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