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2SJ607

MOSFIELDEFFECTTRANSISTOR

SWITCHING P-CHANNELPOWERMOSFET DESCRIPTION The2SJ607isP-channelMOSFieldEffectTransistordesigned forhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=11mΩMAX.(VGS=?10V,ID=?42A) RDS(on)2=16mΩMAX.(VGS=?4.0V,ID=?42A)

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SJ607

MOSFieldEffectTransistor

Features ●Lowon-resistance RDS(on)1=11mΩMAX.(VGS=-10V,ID=-42A) RDS(on)2=16mΩMAX.(VGS=-4.0V,ID=-42A) ●LowCiss:Ciss=7500pFTYP. ●Built-ingateprotectiondiode

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實(shí)業(yè)有限公司

2SJ607

MOSFIELDEFFECTTRANSISTOR

DESCRIPTION The2SJ607isP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=11m?MAX.(VGS=?10V,ID=?42A) RDS(on)2=16m?MAX.(VGS=?4.0V,ID=?42A) ?Lowinputcapacitance: Ciss=

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

2SJ607-S

MOSFIELDEFFECTTRANSISTOR

SWITCHING P-CHANNELPOWERMOSFET DESCRIPTION The2SJ607isP-channelMOSFieldEffectTransistordesigned forhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=11mΩMAX.(VGS=?10V,ID=?42A) RDS(on)2=16mΩMAX.(VGS=?4.0V,ID=?42A)

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SJ607-S

MOSFIELDEFFECTTRANSISTOR

DESCRIPTION The2SJ607isP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=11m?MAX.(VGS=?10V,ID=?42A) RDS(on)2=16m?MAX.(VGS=?4.0V,ID=?42A) ?Lowinputcapacitance: Ciss=

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

2SJ607-Z

MOSFIELDEFFECTTRANSISTOR

DESCRIPTION The2SJ607isP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=11m?MAX.(VGS=?10V,ID=?42A) RDS(on)2=16m?MAX.(VGS=?4.0V,ID=?42A) ?Lowinputcapacitance: Ciss=

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

2SJ607-Z

MOSFIELDEFFECTTRANSISTOR

SWITCHING P-CHANNELPOWERMOSFET DESCRIPTION The2SJ607isP-channelMOSFieldEffectTransistordesigned forhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=11mΩMAX.(VGS=?10V,ID=?42A) RDS(on)2=16mΩMAX.(VGS=?4.0V,ID=?42A)

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SJ607-ZJ

MOSFIELDEFFECTTRANSISTOR

SWITCHING P-CHANNELPOWERMOSFET DESCRIPTION The2SJ607isP-channelMOSFieldEffectTransistordesigned forhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=11mΩMAX.(VGS=?10V,ID=?42A) RDS(on)2=16mΩMAX.(VGS=?4.0V,ID=?42A)

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SJ607-ZJ

P-ChannelMOSFET

■Features ●VDS(V)=-60V ●ID=-83A ●RDS(ON)

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實(shí)業(yè)有限公司

2SJ607-ZJ

MOSFIELDEFFECTTRANSISTOR

DESCRIPTION The2SJ607isP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=11m?MAX.(VGS=?10V,ID=?42A) RDS(on)2=16m?MAX.(VGS=?4.0V,ID=?42A) ?Lowinputcapacitance: Ciss=

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

詳細(xì)參數(shù)

  • 型號：

    2SJ607-AZ

  • 制造商：

    Renesas Electronics

  • 功能描述：

    Trans MOSFET P-CH 60V 83A 3-Pin(3+Tab) TO-220 Cut Tape

  • 功能描述：

    Pch -60V -83A 11m@10V TO220AB Bulk

  • 制造商：

    Renesas Electronics Corporation

  • 功能描述：

    Pch MOSFET,60V,83A,9.1m ohm,TO-220AB

  • 制造商：

    Renesas

  • 功能描述：

    Trans MOSFET P-CH 60V 83A 3-Pin(3+Tab) TO-220 Isolated

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
RENESAS
19+
TO-220
5000
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價(jià)
RENESAS
2023+
TO-220
8800
正品渠道現(xiàn)貨 終端可提供BOM表配單。
 詢價(jià)
RENESAS
24+
TO-220
10000
公司現(xiàn)貨
 詢價(jià)
NEC
08+
TO-220
19
只做原裝正品
 詢價(jià)
NEC
24+
TO-220
5000
全新原裝正品,現(xiàn)貨銷售
 詢價(jià)
NEC
22+23+
TO-220
8000
新到現(xiàn)貨，只做原裝進(jìn)口
 詢價(jià)
NEC
23+
T0-262
35890
詢價(jià)
NEC
24+
TO-262
8866
詢價(jià)
NEC
2020+
TO-262
80000
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增
 詢價(jià)
NEC
24+
TO-262
16800
絕對原裝進(jìn)口現(xiàn)貨,假一賠十,價(jià)格優(yōu)勢!?
 詢價(jià)
更多2SJ607-AZ供應(yīng)商 更新時(shí)間2025-3-27 10:38:00

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