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2SJ605-S

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The2SJ605isP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=20m?MAX.(VGS=–10V,ID=–33A) RDS(on)2=31m?MAX.(VGS=–4.0V,ID=–33A) ?Lowinputcapacitance Ci

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

2SJ605-S

MOS FIELD EFFECT TRANSISTOR

SWITCHING P-CHANNELPOWERMOSFET INDUSTRIALUSE DESCRIPTION The2SJ605isP-channelMOSFieldEffectTransistordesigned forhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=20mΩMAX.(VGS=–10V,ID=–33A) RDS(on)2=31mΩMAX.(VGS=–4.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SJ605

MOSFIELDEFFECTTRANSISTOR

SWITCHING P-CHANNELPOWERMOSFET INDUSTRIALUSE DESCRIPTION The2SJ605isP-channelMOSFieldEffectTransistordesigned forhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=20mΩMAX.(VGS=–10V,ID=–33A) RDS(on)2=31mΩMAX.(VGS=–4.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SJ605

MOSFieldEffectTransistors

Features ●Superlowon-stateresistance: RDS(on)1=20mMAX.(VGS=-10V,ID=-33A) RDS(on)2=31mMAX.(VGS=-4.0V,ID=-33A) ●Lowinputcapacitance Ciss=4600pFTYP.(VDS=-10V,VGS=0A) ●Built-ingateprotectiondiode

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實業(yè)有限公司

2SJ605

MOSFIELDEFFECTTRANSISTOR

DESCRIPTION The2SJ605isP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=20m?MAX.(VGS=–10V,ID=–33A) RDS(on)2=31m?MAX.(VGS=–4.0V,ID=–33A) ?Lowinputcapacitance Ci

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

2SJ605-Z

MOSFIELDEFFECTTRANSISTOR

DESCRIPTION The2SJ605isP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=20m?MAX.(VGS=–10V,ID=–33A) RDS(on)2=31m?MAX.(VGS=–4.0V,ID=–33A) ?Lowinputcapacitance Ci

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

2SJ605-Z

MOSFIELDEFFECTTRANSISTOR

SWITCHING P-CHANNELPOWERMOSFET INDUSTRIALUSE DESCRIPTION The2SJ605isP-channelMOSFieldEffectTransistordesigned forhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=20mΩMAX.(VGS=–10V,ID=–33A) RDS(on)2=31mΩMAX.(VGS=–4.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SJ605-ZJ

MOSFIELDEFFECTTRANSISTOR

SWITCHING P-CHANNELPOWERMOSFET INDUSTRIALUSE DESCRIPTION The2SJ605isP-channelMOSFieldEffectTransistordesigned forhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=20mΩMAX.(VGS=–10V,ID=–33A) RDS(on)2=31mΩMAX.(VGS=–4.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SJ605-ZJ

P-ChannelMOSFET

■Features ●VDS(V)=-60V ●ID=-65A ●RDS(ON)

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實業(yè)有限公司

2SJ605-ZJ

MOSFIELDEFFECTTRANSISTOR

DESCRIPTION The2SJ605isP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=20m?MAX.(VGS=–10V,ID=–33A) RDS(on)2=31m?MAX.(VGS=–4.0V,ID=–33A) ?Lowinputcapacitance Ci

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

詳細(xì)參數(shù)

  • 型號：

    2SJ605-S

  • 制造商：

    NEC

  • 制造商全稱：

    NEC

  • 功能描述：

    MOS FIELD EFFECT TRANSISTOR

供應(yīng)商型號品牌批號封裝庫存備注價格
NEC
17+
TO-262
31518
原裝正品 可含稅交易
 詢價
NEC
23+
T0-262
35890
詢價
NEC
24+
TO-262
8866
詢價
NEC
1822+
TO-262
9852
只做原裝正品假一賠十為客戶做到零風(fēng)險!!
 詢價
NEC
18+
TO-262
41200
原裝正品,現(xiàn)貨特價
 詢價
NEC
24+
TO-262
16800
絕對原裝進口現(xiàn)貨,假一賠十,價格優(yōu)勢!?
 詢價
NEC
22+
TO-262
25000
只做原裝進口現(xiàn)貨,專注配單
 詢價
NEC
2339+
8858
公司原廠原裝現(xiàn)貨假一罰十!特價出售!強勢庫存!
 詢價
NEC
20+
TO-220
36900
原裝優(yōu)勢主營型號-可開原型號增稅票
 詢價
NEC
24+
6540
原裝現(xiàn)貨/歡迎來電咨詢
 詢價
更多2SJ605-S供應(yīng)商 更新時間2025-1-14 14:00:00

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