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2SJ607

MOSFIELDEFFECTTRANSISTOR

SWITCHING P-CHANNELPOWERMOSFET DESCRIPTION The2SJ607isP-channelMOSFieldEffectTransistordesigned forhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=11mΩMAX.(VGS=?10V,ID=?42A) RDS(on)2=16mΩMAX.(VGS=?4.0V,ID=?42A)

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SJ607

MOSFieldEffectTransistor

Features ●Lowon-resistance RDS(on)1=11mΩMAX.(VGS=-10V,ID=-42A) RDS(on)2=16mΩMAX.(VGS=-4.0V,ID=-42A) ●LowCiss:Ciss=7500pFTYP. ●Built-ingateprotectiondiode

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實(shí)業(yè)有限公司

2SJ607

MOSFIELDEFFECTTRANSISTOR

DESCRIPTION The2SJ607isP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=11m?MAX.(VGS=?10V,ID=?42A) RDS(on)2=16m?MAX.(VGS=?4.0V,ID=?42A) ?Lowinputcapacitance: Ciss=

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

2SJ607-S

MOSFIELDEFFECTTRANSISTOR

DESCRIPTION The2SJ607isP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=11m?MAX.(VGS=?10V,ID=?42A) RDS(on)2=16m?MAX.(VGS=?4.0V,ID=?42A) ?Lowinputcapacitance: Ciss=

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

2SJ607-S

MOSFIELDEFFECTTRANSISTOR

SWITCHING P-CHANNELPOWERMOSFET DESCRIPTION The2SJ607isP-channelMOSFieldEffectTransistordesigned forhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=11mΩMAX.(VGS=?10V,ID=?42A) RDS(on)2=16mΩMAX.(VGS=?4.0V,ID=?42A)

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SJ607-Z

MOSFIELDEFFECTTRANSISTOR

SWITCHING P-CHANNELPOWERMOSFET DESCRIPTION The2SJ607isP-channelMOSFieldEffectTransistordesigned forhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=11mΩMAX.(VGS=?10V,ID=?42A) RDS(on)2=16mΩMAX.(VGS=?4.0V,ID=?42A)

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SJ607-Z

MOSFIELDEFFECTTRANSISTOR

DESCRIPTION The2SJ607isP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=11m?MAX.(VGS=?10V,ID=?42A) RDS(on)2=16m?MAX.(VGS=?4.0V,ID=?42A) ?Lowinputcapacitance: Ciss=

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

2SJ607-ZJ

MOSFIELDEFFECTTRANSISTOR

SWITCHING P-CHANNELPOWERMOSFET DESCRIPTION The2SJ607isP-channelMOSFieldEffectTransistordesigned forhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=11mΩMAX.(VGS=?10V,ID=?42A) RDS(on)2=16mΩMAX.(VGS=?4.0V,ID=?42A)

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SJ607-ZJ

P-ChannelMOSFET

■Features ●VDS(V)=-60V ●ID=-83A ●RDS(ON)

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實(shí)業(yè)有限公司

2SJ607-ZJ

MOSFIELDEFFECTTRANSISTOR

DESCRIPTION The2SJ607isP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=11m?MAX.(VGS=?10V,ID=?42A) RDS(on)2=16m?MAX.(VGS=?4.0V,ID=?42A) ?Lowinputcapacitance: Ciss=

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

詳細(xì)參數(shù)

  • 型號(hào)：

    2SJ607-Z-AZ

  • 制造商：

    Renesas Electronics

  • 功能描述：

    Pch -60V -83A 11m@10V TO220SMD Bulk

  • 制造商：

    Renesas

  • 功能描述：

    Trans MOSFET P-CH 60V 83A 3-Pin(2+Tab) TO-263

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
RENESAS
2020+
TO263
80000
只做自己庫(kù)存,全新原裝進(jìn)口正品假一賠百,可開13%增
 詢價(jià)
RENESAS
21+
TO263
819
原裝現(xiàn)貨假一賠十
 詢價(jià)
RENESAS
22+
TO263
25000
原裝現(xiàn)貨,價(jià)格優(yōu)惠,假一罰十
 詢價(jià)
RENESAS
1249
TO263
210
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價(jià)
RENESAS
23+
TO263
2710
原廠原裝正品
 詢價(jià)
RENESAS
589220
16余年資質(zhì) 絕對(duì)原盒原盤 更多數(shù)量
 詢價(jià)
RENESAS
2023+
TO263
8800
正品渠道現(xiàn)貨 終端可提供BOM表配單。
 詢價(jià)
RENESAS
23+
TO263
819
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
NEC
10PB
TO263/2.5
2145
全新原裝進(jìn)口自己庫(kù)存優(yōu)勢(shì)
 詢價(jià)
NEC
17+
TO263/2.5
9988
只做原裝進(jìn)口,自己庫(kù)存
 詢價(jià)
更多2SJ607-Z-AZ供應(yīng)商 更新時(shí)間2025-1-15 14:16:00

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