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2SJ605-Z

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The2SJ605isP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=20m?MAX.(VGS=–10V,ID=–33A) RDS(on)2=31m?MAX.(VGS=–4.0V,ID=–33A) ?Lowinputcapacitance Ci

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

2SJ605-Z

MOS FIELD EFFECT TRANSISTOR

SWITCHING P-CHANNELPOWERMOSFET INDUSTRIALUSE DESCRIPTION The2SJ605isP-channelMOSFieldEffectTransistordesigned forhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=20mΩMAX.(VGS=–10V,ID=–33A) RDS(on)2=31mΩMAX.(VGS=–4.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SJ605-ZJ

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The2SJ605isP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=20m?MAX.(VGS=–10V,ID=–33A) RDS(on)2=31m?MAX.(VGS=–4.0V,ID=–33A) ?Lowinputcapacitance Ci

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

2SJ605-ZJ

P-Channel MOSFET

■Features ●VDS(V)=-60V ●ID=-65A ●RDS(ON)

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實(shí)業(yè)有限公司

2SJ605-ZJ

MOS FIELD EFFECT TRANSISTOR

SWITCHING P-CHANNELPOWERMOSFET INDUSTRIALUSE DESCRIPTION The2SJ605isP-channelMOSFieldEffectTransistordesigned forhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=20mΩMAX.(VGS=–10V,ID=–33A) RDS(on)2=31mΩMAX.(VGS=–4.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SJ605

MOSFIELDEFFECTTRANSISTOR

SWITCHING P-CHANNELPOWERMOSFET INDUSTRIALUSE DESCRIPTION The2SJ605isP-channelMOSFieldEffectTransistordesigned forhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=20mΩMAX.(VGS=–10V,ID=–33A) RDS(on)2=31mΩMAX.(VGS=–4.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SJ605

MOSFieldEffectTransistors

Features ●Superlowon-stateresistance: RDS(on)1=20mMAX.(VGS=-10V,ID=-33A) RDS(on)2=31mMAX.(VGS=-4.0V,ID=-33A) ●Lowinputcapacitance Ciss=4600pFTYP.(VDS=-10V,VGS=0A) ●Built-ingateprotectiondiode

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實(shí)業(yè)有限公司

2SJ605

MOSFIELDEFFECTTRANSISTOR

DESCRIPTION The2SJ605isP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=20m?MAX.(VGS=–10V,ID=–33A) RDS(on)2=31m?MAX.(VGS=–4.0V,ID=–33A) ?Lowinputcapacitance Ci

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

2SJ605-S

MOSFIELDEFFECTTRANSISTOR

SWITCHING P-CHANNELPOWERMOSFET INDUSTRIALUSE DESCRIPTION The2SJ605isP-channelMOSFieldEffectTransistordesigned forhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=20mΩMAX.(VGS=–10V,ID=–33A) RDS(on)2=31mΩMAX.(VGS=–4.

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SJ605-S

MOSFIELDEFFECTTRANSISTOR

DESCRIPTION The2SJ605isP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=20m?MAX.(VGS=–10V,ID=–33A) RDS(on)2=31m?MAX.(VGS=–4.0V,ID=–33A) ?Lowinputcapacitance Ci

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

詳細(xì)參數(shù)

  • 型號(hào)：

    2SJ605-Z

  • 制造商：

    NEC

  • 制造商全稱(chēng)：

    NEC

  • 功能描述：

    MOS FIELD EFFECT TRANSISTOR

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
NEC
2024
TO-263
503136
16余年資質(zhì) 絕對(duì)原盒原盤(pán)代理渠道 更多數(shù)量
 詢(xún)價(jià)
NEC
23+
TO-263
35890
詢(xún)價(jià)
NEC
24+
8858
公司原廠原裝現(xiàn)貨假一罰十!特價(jià)出售!強(qiáng)勢(shì)庫(kù)存!
 詢(xún)價(jià)
NEC
1822+
TO-263
9852
只做原裝正品假一賠十為客戶(hù)做到零風(fēng)險(xiǎn)!!
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NEC
18+
TO-263
41200
原裝正品,現(xiàn)貨特價(jià)
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NEC
20+
TO-220
36900
原裝優(yōu)勢(shì)主營(yíng)型號(hào)-可開(kāi)原型號(hào)增稅票
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NEC
24+
TO-263
16800
絕對(duì)原裝進(jìn)口現(xiàn)貨,假一賠十,價(jià)格優(yōu)勢(shì)!?
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NEC
24+
6540
原裝現(xiàn)貨/歡迎來(lái)電咨詢(xún)
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NEC
23+
TO-220
50000
全新原裝正品現(xiàn)貨,支持訂貨
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NEC
2022
TO-220
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢(xún)
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更多2SJ605-Z供應(yīng)商 更新時(shí)間2025-3-21 13:44:00

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