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ISC030N10NM6

Marking：030N10N6；Package：PG-TDSON-8FL；OptiMOSTM 6 Power-Transistor, 100 V

Features ?N-channel,normallevel ?Verylowon-resistanceRDS(on) ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowreverserecoverycharge(Qrr) ?Highavalancheenergyrating ?175°Coperatingtemperature ?Optimizedforhighfrequencyswitchingandsynchronousrectification ?

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

ISC030N12NM6

Marking：03012N6；Package：PG-TSON-8；OptiMOSTM 6 Power-Transistor, 120 V

Features ?N-channel,normallevel ?Verylowon-resistanceRDS(on) ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowreverserecoverycharge(Qrr) ?Highavalancheenergyrating ?175°Coperatingtemperature ?Optimizedforhighfrequencyswitchingandsynchronousrectification ?

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

ISC032N12LM6

Marking：032N12L6；Package：PG-TDSON-8FL；MOSFET OptiMOSTM 6 Power-Transistor, 120 V

Features ?N-channel,logiclevel ?Verylowon-resistanceRDS(on) ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowreverserecoverycharge(Qrr) ?Highavalancheenergyrating ?175°Coperatingtemperature ?Optimizedforhighfrequencyswitchingandsynchronousrectification ?

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

ISC033N03LF2S

Marking：033N03F2；Package：PG-TDSON-8；MOSFET StrongIRFET? 2 Power?Transistor, 30 V

Features ?Optimizedforawiderangeofapplications ?N?channel,logiclevel ?100%avalanchetested ?175°Crated ?Pb?freeleadplating;RoHScompliant ?Halogen?freeaccordingtoIEC61249?2?21

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

ISC035N10NM5LF

Marking：035N10LF；Package：PG-TDSON-8FL；OptiMOSTM 5 Linear FET, 100 V

Features ?Idealforhot-swap,batteryprotectionande-fuseapplications ?Verylowon-resistanceRDS(on) ?WidesafeoperatingareaSOA ?N-channel,normallevel ?100avalanchetested ?Pb-freeleadplating;RoHScompliant ?Halogen-freeaccordingtoIEC61249-2-21

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

ISC037N03L5IS

Marking：037N03LI；Package：PG-TDSON-8；OptiMOSTMPower-MOSFET,30V

Features ?OptimizedSyncFETforhighperformancebuckconverter ?IntegratedmonolithicSchottky-likediode ?Verylowon-resistanceRDS(on)@VGS=4.5V ?Superiorthermalresistance ?N-channel ?Pb-freeleadplating;RoHScompliant ?Halogen-freeaccordingtoIEC61249-2-21

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

ISC037N12NM6

Marking：037N12N6；Package：PG-TDSON-8FL；OptiMOSTM 6 Power-Transistor, 120 V

Features ?N-channel,normallevel ?Verylowon-resistanceRDS(on) ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowreverserecoverycharge(Qrr) ?Highavalancheenergyrating ?175°Coperatingtemperature ?Optimizedforhighfrequencyswitchingandsynchronousrectification ?

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

ISC037N13NM6

Marking：03713N6；Package：PG-TSON-8；MOSFET OptiMOSTM 6 Power-Transistor, 135 V

Features ?N-channel,normallevel ?Verylowon-resistanceRDS(on) ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowreverserecoverycharge(Qrr) ?100%avalanchetested ?175°Coperatingtemperature ?Optimizedformotordrivesandbatterypoweredapplications ?Pb-freelea

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

ISL9203ACRZ

Marking：03AZ；Package：DFN；Li-Ion/Li Polymer Battery Charger

Features Completechargerforsingle-cellLi-ionbatteries Verylowthermaldissipation Integratedpasselementandcurrentsensor Noexternalblockingdioderequired 1voltageaccuracy Programmablecurrentlimitupto1.5A Chargecurrentthermalfoldback Acceptsmultipletypesofadapters

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

ISL9203ACRZ-T

Marking：03AZ；Package：DFN；Li-Ion/Li Polymer Battery Charger

Features Completechargerforsingle-cellLi-ionbatteries Verylowthermaldissipation Integratedpasselementandcurrentsensor Noexternalblockingdioderequired 1voltageaccuracy Programmablecurrentlimitupto1.5A Chargecurrentthermalfoldback Acceptsmultipletypesofadapters

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    03

  • 制造商：

    KNIPEX

  • 功能描述：

    COMBINATION PLIERS

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更多03供應(yīng)商 更新時(shí)間2025-6-27 12:02:00

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