ISZ033N03LF2S

Marking：033N03F；Package：PG-TSDSON-8；MOSFET StrongIRFET? 2 Power?Transistor, 30 V

Features ?Optimizedforwiderangeofapplications ?N?channel,logiclevel ?100%avalanchetested ?175°Crated ?Pb?freeleadplating;RoHScompliant ?Halogen?freeaccordingtoIEC61249?2?21

LM2903BQDGKRQ1

Marking：03BQ；Package：VSSOP；LM2903-Q1 and LM2903B-Q1 Automotive Dual Comparators

Features ?Qualifiedforautomotiveapplications ?AEC-Q100qualifiedwiththefollowingresults: –Devicetemperaturegrade0:–40°Cto 150°Cambientoperatingtemperaturerange (LM2903E-Q1) –Devicetemperaturegrade1:–40°Cto125°C ambientoperatingtemperaturerange –DeviceHBMESD

NCE035N30G

Marking：035N30G；Package：DFN5X6-8L；NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE025N30Gusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.Itcan beusedinawidevarietyofapplications. Application ●DC/DCConverter ●Idealforhigh-frequencyswitchingandsynchronous rectification GeneralFeatures

NCE035P40GU

Marking：035P40GU；Package：DFN5x6-8L；NCE P-Channel Enhancement Mode Power MOSFET

Description TheNCE035P40GUusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications. Application ●Loadswitch ●Batteryprotectio GeneralFeatures ●VDS=-40V,ID=-130A RDS(ON)

NDC7003P

Marking：03PL；Package：SOT23-6；Dual P-Channel 20V (D-S) MOSFET

ProductSummary Vdss=60V ID=0.5A Rps(oNn)=1.7Q@VGs=-10V

NVMFS003P03P8ZT1G

Marking：03P3；Package：SO8-FL；MOSFET - Power, Single P-Channel, SO8-FL -30 V, 1.8 m, -234 A

Features ?UltraLowRDS(on)toImproveSystemEfficiency ?AdvancedPackageTechnologyin5x6mmforSpaceSavingand ExcellentThermalConduction ?TheseDevicesarePb?Free,HalogenFree/BFRFreeandareRoHS Compliant TypicalApplications ?PowerLoadSwitch ?Protection:ReverseCurr

NVMFWS003P03P8ZT1G

Marking：03P3W；Package：SO8-FL；MOSFET - Power, Single P-Channel, SO8-FL -30 V, 1.8 m, -234 A

Features ?UltraLowRDS(on)toImproveSystemEfficiency ?AdvancedPackageTechnologyin5x6mmforSpaceSavingand ExcellentThermalConduction ?TheseDevicesarePb?Free,HalogenFree/BFRFreeandareRoHS Compliant TypicalApplications ?PowerLoadSwitch ?Protection:ReverseCurr

NVTFS003N04CTAG

Marking：03NC；Package：WDFN8；MOSFET – Power, Single N-Channel 40 V, 3.5 m, 103 A

Features ?SmallFootprint(3.3x3.3mm)forCompactDesign ?LowRDS(on)toMinimizeConductionLosses ?LowCapacitancetoMinimizeDriverLosses ?NVTFWS003N04C?WettableFlanksProduct ?AEC?Q101QualifiedandPPAPCapable ?TheseDevicesarePb?FreeandareRoHSCompliant

NVTFWS003N04CTAG

Marking：03NW；Package：WDFN8；MOSFET – Power, Single N-Channel 40 V, 3.5 m, 103 A

Features ?SmallFootprint(3.3x3.3mm)forCompactDesign ?LowRDS(on)toMinimizeConductionLosses ?LowCapacitancetoMinimizeDriverLosses ?NVTFWS003N04C?WettableFlanksProduct ?AEC?Q101QualifiedandPPAPCapable ?TheseDevicesarePb?FreeandareRoHSCompliant

P0300DM

Marking：03M；Package：SOD-123FL；Thyristor Surge Suppressors (TSS)

FeaturesandBenefits Excellentcapabilityofabsorbingtransientsurge Quickresponsetosurgevoltage(nsLevel) Eliminatesovervoltagecausedbyfastrisingtransients Moisturesensitivitylevel:Level1 Weight69mg(approximate) Nondegenerative ResponseTimeis