BSD3A031V

Marking：03W；Package：SOD-323；USB Vbus

Features 240Wattspeakpulsepower(tp=8/20μs) Unidirectionalconfigurations Solid-statesilicon-avalanchetechnology Lowclampingvoltage Lowleakagecurrent IEC61000-4-2±30kVcontact±30kVair IEC61000-4-4(EFT)40A(5/50ns) IEC61000-4-5(Lightning)16A(8/20μs)

BSD3C031V

Marking：03B；Package：SOD-323；Microprocessor based equipment

Features 480Wattspeakpulsepower(tp=8/20μs) Bidirectionalconfigurations Solid-statesilicon-avalanchetechnology Lowclampingvoltage Lowleakagecurrent IEC61000-4-2±30kVcontact±30kVair IEC61000-4-4(EFT)40A(5/50ns) IEC61000-4-5(Lightning)20A(8/20μs)

CMS03N10Y-HF

Marking：03N10T；Package：SOT-223；MOSFET

Features -Extremelylowswitchingloss. -Excellentstabilityanduniformity.

CMS23N06H8-HF

Marking：031N06T；Package：PDFN5x6-8L；MOSFET

Features -Ultra-lowon-resistanceandgate-charge. -Advancedshielded-gatetechnology.

ESD03V32D-A

Marking：03W；Package：SOD-323；Transient Voltage Suppressors for ESD Protection

Feature 240~408WattsPeakPulsePowerperLine(tp=8/20μs) ProtectsoneI/Olineorpowerline(Unidirectional) Lowclampingvoltage Workingvoltages:3.3V~36V Lowleakagecurrent IEC61000-4-2(ESD)±30kV(air),±30kV(contact): 3.3V~15V); IEC61000-4-2(ESD)±15kV(air),±15kV(contact)

ESD03V32DS-A

Marking：03W；Package：SOD-323；Transient Voltage Suppressors for ESD Protection

Feature MoistureSensitivityLevel(MSL-1) AEC-Q101qualified 240~408WattsPeakPulsePowerperLine(tp=8/20μs) ProtectsoneunidirectionalI/Olineorpowerline LowClampingVoltage WorkingVoltages:3.3V~36V Lowleakagecurrent IEC61000-4-4(EFT):40A(5/50ηs) IEC61000-4-2(ESD)±30k

GAN039-650NBB

Marking：039INBB；Package：CCPAK1212；650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212 package

1.Generaldescription TheGAN039-650NBBisa650V,33mΩGalliumNitride(GaN)FETinaCCPAK1212package.It isanormally-offdevicethatcombinesNexperia’slatesthigh-voltageGaNHEMTH2technology andlow-voltagesiliconMOSFETtechnologies—offeringsuperiorreliabilityandperformanc

GAN039-650NBB

Marking：039INBBX；Package：SOT8000；650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212 package

1.Generaldescription TheGAN039-650NBBisa650V,33mΩGalliumNitride(GaN)FETinaCCPAK1212package.It isanormally-offdevicethatcombinesNexperia’slatesthigh-voltageGaNHEMTH2technology andlow-voltagesiliconMOSFETtechnologies—offeringsuperiorreliabilityandperformanc

GAN039-650NBBA

Marking：039INBBA；Package：SOT8000；650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212 package

1.Generaldescription TheGAN039-650NBBAisanAutomotivequalified650V,33mΩGalliumNitride(GaN)FETina CCPAK1212package.Itisanormally-offdevicethatcombinesNexperia’slatesthigh-voltageGaN HEMTH2technologyandlow-voltagesiliconMOSFETtechnologies—offeringsuperiorrel

GAN039-650NTB

Marking：039INTB；Package：CCPAK1212i；650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212i package

1.Generaldescription TheGAN039-650NTBisa650V,33mΩGalliumNitride(GaN)FETinaCCPAK1212iinverted package.Itisanormally-offdevicethatcombinesNexperia’slatesthigh-voltageGaNHEMT H2technologyandlow-voltagesiliconMOSFETtechnologies—offeringsuperiorreliabilityand