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GSOT36C-E3-08

Marking:03C;Package:SOT-23;Two-line ESD protection device

Features ?Two-lineESDprotectiondevice ?ESDimmunityacc.IEC61000-4?-2 ±30kVcontactdischarg?e ±30kVairdischarge ?ESDcapabilityaccordingtoAEC-Q1?01: humanbodymodel:classH3B:>8kV ?SpacesavingSOT-23package ?AEC-Q101qualifiedavailable

UMWGuangdong Youtai Semiconductor Co., Ltd.

友臺半導(dǎo)體廣東友臺半導(dǎo)體有限公司

IPA030N10N3G

Marking:030N10N;Package:PG-TO220-FP;OptiMOSTM3 Power-Transistor

Features ?N-channel,normallevel ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant ?QualifiedaccordingtoJEDEC1)fortargetapplication ?Idealforhigh-frequencyswitchingandsynchr

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPA030N10N3G

Marking:030N10N;Package:PG-TO220-FP;OptiMOSTM3 Power-Transistor

Features ?N-channel,normallevel ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant ?QualifiedaccordingtoJEDEC1)fortargetapplication ?Idealforhigh-frequencyswitchingandsynchr

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPA032N06N3G

Marking:032N06N;Package:PG-TO220-3-31;OptiMOSTM3 Power-Transistor

Features ?Idealforhighfrequencyswitchingandsync.rec. ?OptimizedtechnologyforDC/DCconverters ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?N-channel,normallevel ?100avalanchetested ?Pb-freeplating;RoHScompliant ?Qualifiedaccordin

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPA037N08N3G

Marking:037N08N;Package:PG-TO220-FP;OptiMOS(TM)3 Power-Transistor

Features ?Idealforhighfrequencyswitchingandsync.rec. ?OptimizedtechnologyforDC/DCconverters ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?N-channel,normallevel ?100avalanchetested ?Pb-freeplating;RoHScompliant ?Qualifiedaccordin

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPA037N08N3G

Marking:037N08N;Package:PG-TO220-FP;OptiMOS(TM)3 Power-Transistor

Features ?Idealforhighfrequencyswitchingandsync.rec. ?OptimizedtechnologyforDC/DCconverters ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?N-channel,normallevel ?100avalanchetested ?Pb-freeplating;RoHScompliant ?Qualifiedaccordin

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPB035N10NF2S

Marking:035N10NS;Package:PG-TO263-3;MOSFET StrongIRFET? 2 Power?Transistor, 100 V

Features ?Optimizedforawiderangeofapplications ?N?channel,normallevel ?100%avalanchetested ?Pb?freeleadplating;RoHScompliant ?Halogen?freeaccordingtoIEC61249?2?21

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPB035N12NM6

Marking:035N12N6;Package:PG-TO263-3;OptiMOSTM 6 Power-Transistor, 120 V

Features ?N-channel,normallevel ?Verylowon-resistanceRDS(on) ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowreverserecoverycharge(Qrr) ?Highavalancheenergyrating ?175°Coperatingtemperature ?Optimizedforhighfrequencyswitchingandsynchronousrectification ?

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPB037N08N3G

Marking:035N08N;Package:PG-TO263-3;OptiMOS3 Power-Transistor

Features ?Idealforhighfrequencyswitchingandsync.rec. ?OptimizedtechnologyforDC/DCconverters ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?N-channel,normallevel ?100avalanchetested ?Pb-freeplating;RoHScompliant ?Qualifiedaccordin

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPB038N12N3G

Marking:038N12N;Package:PG-TO263-3;N-channel, normal level

Features ?N-channel,normallevel ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?175°Coperatingtemperature ?Pb-freeleadplating;RoHScompliant,halogenfree ?QualifiedaccordingtoJEDEC1)fortargetapplication ?Idealforhigh-frequencyswitch

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

詳細參數(shù)

  • 型號:

    03

  • 制造商:

    KNIPEX

  • 功能描述:

    COMBINATION PLIERS

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25
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原裝正品
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2410+
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原廠原裝,假一罰十
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JDSU/AVANEX/SANTEC
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更多03供應(yīng)商 更新時間2025-6-27 14:01:00