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STG2017

Dual N-Channel E nhancement Mode Field Effect Transistor

FEATURES ●SuperhighdensecelldesignforlowRDS(ON). ●Ruggedandreliable. ●SurfaceMountPackage. ●ESDProtected.

SamhopSamHop Microelectronics Corp.

三合微科三合微科股份有限公司

STG-22-S1

Q-Band Noise Figure and Gain Test Extenders

FEATURES FullBandCoverage PrecisionCalibratedENR GreatENRandGainFlatness APPLICATIONS TestLab Instrumentation

ERAVANT

Eravant

STG2454

Super high dense cell design for low RDS(ON).

STU412STO-252Single-N STU420STO-252Single-N STU442STO-252Single-N STU410STO-252Single-N STU456ATO-252Single-N STU456STO-252Single-N STU448STO-252Single-N STU466STO-252Single-N STU446STO-252SingleN STU432LTO-252SingleN STU438ATO-252Single-N STU458STO-252SingleN

SamhopSamHop Microelectronics Corp.

三合微科三合微科股份有限公司

STG2507

Dual P-Channel E nhancement Mode Field Effect Transistor

FEATURES ●SuperhighdensecelldesignforlowRDS(ON). ●Ruggedandreliable. ●SurfaceMountPackage.

SamhopSamHop Microelectronics Corp.

三合微科三合微科股份有限公司

STG-28-S1

Ka-Band Noise Figure and Gain Test Extenders

FEATURES FullBandCoverage PrecisionCalibratedENR GreatENRandGainFlatness APPLICATIONS TestLab Instrumentations

ERAVANT

Eravant

STG3155

Low voltage 0.5廓 Max single SPDT switch with break-before-make feature

Description TheSTG3155isahigh-speedCMOSlowvoltagesingleanalogS.P.D.T.(SinglePoleDualThrow)switchor2:1Multiplexer/DemultiplexerswitchfabricatedinsilicongateC2MOStechnology.Itisdesignedtooperatefrom1.65Vto4.3V,makingthisdeviceidealforportableapplications.

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STG3155DTR

Low voltage 0.5廓 Max single SPDT switch with break-before-make feature

Description TheSTG3155isahigh-speedCMOSlowvoltagesingleanalogS.P.D.T.(SinglePoleDualThrow)switchor2:1Multiplexer/DemultiplexerswitchfabricatedinsilicongateC2MOStechnology.Itisdesignedtooperatefrom1.65Vto4.3V,makingthisdeviceidealforportableapplications.

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STG3157

LOW VOLTAGE LOW ON RESISTANCE SPDT SWITCH WITH BREAK BEFORE MAKE FEATURE

Description TheSTG3157isahigh-speedCMOSanalogSPDT(single-poledouble-throw)switchor2:1multiplexer/demultiplexerbusswitchmanufacturedusingsilicongateCMOStechnology.Itisdesignedtooperatefroma1.65Vto5.5Vsupply,makingthedeviceidealforportableapplications. Feat

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STG3157CTR

LOW VOLTAGE LOW ON RESISTANCE SPDT SWITCH WITH BREAK BEFORE MAKE FEATURE

Description TheSTG3157isahigh-speedCMOSanalogSPDT(single-poledouble-throw)switchor2:1multiplexer/demultiplexerbusswitchmanufacturedusingsilicongateCMOStechnology.Itisdesignedtooperatefroma1.65Vto5.5Vsupply,makingthedeviceidealforportableapplications. Feat

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STG3159

Low voltage 1廓 max single SPDT switch with break-before-make feature

Description TheSTG3159isahigh-speedCMOSlowvoltagesingleanalogS.P.D.T.(SinglePoleDualThrow)switchor2:1Multiplexer/DemultiplexerswitchfabricatedinsilicongateC2MOStechnology.Itisdesignedtooperatefrom1.65Vto4.3V,makingthisdeviceidealforportableapplications.

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

詳細(xì)參數(shù)

  • 型號(hào)：

    STG

  • 功能描述：

    IGBT 晶體管 N-Ch 600 Volt 12 Amp

  • RoHS：

    否

  • 制造商：

    Fairchild Semiconductor

  • 配置：

    集電極—發(fā)射極最大電壓

  • VCEO：

    650 V

  • 集電極—射極飽和電壓：

    2.3 V

  • 柵極/發(fā)射極最大電壓：

    20 V 在25

  • C的連續(xù)集電極電流：

    150 A

  • 柵極—射極漏泄電流：

    400 nA

  • 功率耗散：

    187 W

  • 封裝/箱體：

    TO-247

  • 封裝：

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
ST
23+
TO-247
8795
詢價(jià)
STMICROELEC
24+
原封裝
400
原裝現(xiàn)貨假一罰十
 詢價(jià)
ST
06+
TO-247
2000
原裝
 詢價(jià)
ST
21+
TO-247
23480
詢價(jià)
ST
24+
TO-247
2500
原裝現(xiàn)貨熱賣
 詢價(jià)
ST全系列
25+23+
TO-247
26002
絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨
 詢價(jià)
ST/意法
23+
TO247
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
ST/意法
22+
TO247
50000
只做原裝假一罰十,歡迎咨詢
 詢價(jià)
ST
11+
TO-247
500
進(jìn)口原裝現(xiàn)貨假一賠萬(wàn)力挺實(shí)單
 詢價(jià)
ST
23+
原廠原封
16900
正規(guī)渠道,只有原裝!
 詢價(jià)
更多STG供應(yīng)商 更新時(shí)間2025-4-20 20:07:00

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