STG3699BVTR

Low Voltage 0.5ohm Max, Quad SPDT Switch with break-before-make feature

Description TheSTG3699Bisahigh-speedCMOSlowvoltagequadanalogSPDT(single-poledoublethrow)switchor2:1multiplexer/demultiplexerswitchfabricatedusingsilicongateC2MOStechnology.Designedtooperatefrom1.65to4.3V,thisdeviceisidealforportableapplications. Features ■

STG3699QTR

LOW VOLTAGE 0.5??MAX QUAD SPDT SWITCH WITH BREAK BEFORE MAKE FEATURE

DESCRIPTION TheSTG3699isanhigh-speedCMOSLOWVOLTAGEQUADANALOGS.P.D.T.(SinglePoleDualThrow)SWITCHor2:1Multiplexer/DemultiplexerSwitchfabricatedinsilicongateC2MOStechnology.Itisdesignedtooperatefrom1.65Vto4.3V,makingthisdeviceidealforportableapplications. ■

STG3699TTR

LOW VOLTAGE 0.5??MAX QUAD SPDT SWITCH WITH BREAK BEFORE MAKE FEATURE

DESCRIPTION TheSTG3699isanhigh-speedCMOSLOWVOLTAGEQUADANALOGS.P.D.T.(SinglePoleDualThrow)SWITCHor2:1Multiplexer/DemultiplexerSwitchfabricatedinsilicongateC2MOStechnology.Itisdesignedtooperatefrom1.65Vto4.3V,makingthisdeviceidealforportableapplications. ■

STG3856

Low Voltage 1.0??Max Dual SP3T Switch With Break Before Make Feature

Description TheSTG3856isahigh-speedCMOSlowvoltagedualanalogSP3T(singlepoletriplethrow)switchordual3:1multiplexer/demultiplexerswitchfabricatedinsilicongateC2MOStechnology.Itisdesignedtooperatefrom1.65Vto4.3V,makingthisdeviceidealforportableapplicatio

STG3856

Low voltage 1.0 max dual SP3T switch with break-before-make feature

Description TheSTG3856isahigh-speedCMOSlowvoltagedualanalogSP3T(singlepoletriplethrow)switchordual3:1multiplexer/demultiplexerswitchfabricatedinsilicongateC2MOStechnology.Itisdesignedtooperatefrom1.65Vto4.3V,makingthisdeviceidealforportableapplicatio

STG3856QTR

Low voltage 1.0 max dual SP3T switch with break-before-make feature

Description TheSTG3856isahigh-speedCMOSlowvoltagedualanalogSP3T(singlepoletriplethrow)switchordual3:1multiplexer/demultiplexerswitchfabricatedinsilicongateC2MOStechnology.Itisdesignedtooperatefrom1.65Vto4.3V,makingthisdeviceidealforportableapplicatio

STG3P3M25K120

Marking：G3P3M25K120；Package：SEMITOP3；Tri-phase inverter IGBT - SEMITOP?3 module

Features ■Lowon-voltagedrop(VCE(sat)) ■LowCRES/CIESratio(nocross-conduction susceptibility) ■Verysoftultrafastrecoveryantiparalleldiode ■Frequencyoperationupto40kHz ■Newgenerationproductswithtighter parameterdistribution ■Onescrewmounting ■Compactdesign

STG50M120F3D7

Trench gate field-stop 1200 V, 50 A low-loss M series IGBT die in D7 packing

Features ?Maximumjunctiontemperature:TJ=175°C ?10μsofshort-circuitwithstandtime ?LowVCE(sat)=1.7V(typ.)@IC=50A ?Tightparameterdistribution ?PositiveVCE(sat)temperaturecoefficient Applications ?Industrialmotorcontrol ?Industrialdrives ?Solarinverters

STG5678

Low voltage dual SPDT switch with negative rail capability

Features ■Distortion-freenegativesignalthroughput downtoVCC-5.5V ■Wideoperatingvoltagerange: VCC(opr)=1.65to4.5Vsinglesupply ■Ultralowpowerdissipation: ICC=0.2μA(max.)atTA=85°C ■LowONresistance: RON=0.5Ω(max.TA=25°C)atVCC=3.6V ■4.3Vtole

STG5678BJR

Low voltage dual SPDT switch with negative rail capability

Features ■Distortion-freenegativesignalthroughput downtoVCC-5.5V ■Wideoperatingvoltagerange: VCC(opr)=1.65to4.5Vsinglesupply ■Ultralowpowerdissipation: ICC=0.2μA(max.)atTA=85°C ■LowONresistance: RON=0.5Ω(max.TA=25°C)atVCC=3.6V ■4.3Vtole