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STG5678CJR

Low voltage dual SPDT switch with negative rail capability

Features ■Distortion-freenegativesignalthroughput downtoVCC-5.5V ■Wideoperatingvoltagerange: VCC(opr)=1.65to4.5Vsinglesupply ■Ultralowpowerdissipation: ICC=0.2μA(max.)atTA=85°C ■LowONresistance: RON=0.5Ω(max.TA=25°C)atVCC=3.6V ■4.3Vtole

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STG60H65FBD7

Trench gate field-stop 650 V, 60 A high-speed HB series IGBT die in D7 packing

Features ?Maximumjunctiontemperature:TJ=175°C ?Highspeedswitchingseries ?Minimizedtailcurrent ?Verylowsaturationvoltage:VCE(sat)=1.65V(typ)@IC=60A ?Safeparalleling ?Tightparameterdistribution Applications ?Solar ?Welding ?Highfrequencyconverter

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STG719

LOW VOLTAGE 4ohm SPDT SWITCH

DESCRIPTION TheSTG719isanhighspeedSPDTCMOSSWITCHfrabricatedinsilicongateC2MOStechnology.Itisdesignedtooperatefrom1.8Vto5.5V,makingthisdeviceidealforportableapplications.Itoffers4?ON-ResistanceMaxat5V25°C.Additionalkeyfeaturesarefastswitchingspeed(tON=

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STG719FTR

LOW VOLTAGE 4ohm SPDT SWITCH

DESCRIPTION TheSTG719isanhighspeedSPDTCMOSSWITCHfrabricatedinsilicongateC2MOStechnology.Itisdesignedtooperatefrom1.8Vto5.5V,makingthisdeviceidealforportableapplications.Itoffers4?ON-ResistanceMaxat5V25°C.Additionalkeyfeaturesarefastswitchingspeed(tON=

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STG8203

Dual N-Channel Enhancement Mode Field Effect Transistor

SurfaceMountPackage. FEATURES SuperhighdensecelldesignforlowRDS(ON). Ruggedandreliable.

SamhopSamHop Microelectronics Corp.

三合微科三合微科股份有限公司

STG8205

Super high dense cell design for low RDS(ON).

STU412STO-252Single-N STU420STO-252Single-N STU442STO-252Single-N STU410STO-252Single-N STU456ATO-252Single-N STU456STO-252Single-N STU448STO-252Single-N STU466STO-252Single-N STU446STO-252SingleN STU432LTO-252SingleN STU438ATO-252Single-N STU458STO-252SingleN

SamhopSamHop Microelectronics Corp.

三合微科三合微科股份有限公司

STG8206

Dual N-Channel E nhancement Mode Field Effect Transistor

FEATURES ●SuperhighdensecelldesignforlowRDS(ON). ●Ruggedandreliable. ●SurfaceMountPackage.

SamhopSamHop Microelectronics Corp.

三合微科三合微科股份有限公司

STG8207

Dual N-Channel E nhancement Mode F ield E ffect Transistor

FEATURES ●SuperhighdensecelldesignforlowRDS(ON). ●Ruggedandreliable. ●SurfaceMountPackage.

SamhopSamHop Microelectronics Corp.

三合微科三合微科股份有限公司

STG8209

Dual N-Channel E nhancement Mode Field Effect Transistor

FEATURES ●SuperhighdensecelldesignforlowRDS(ON). ●Ruggedandreliable. ●SurfaceMountPackage. ●ESDProtected.

SamhopSamHop Microelectronics Corp.

三合微科三合微科股份有限公司

STG8210

Dual N-Channel E nhancement Mode Field Effect Transistor

FEATURES ?SuperhighdensecelldesignforlowRDS(ON). ?Ruggedandreliable. ?SurfaceMountPackage. ?ESDProtected.

SamhopSamHop Microelectronics Corp.

三合微科三合微科股份有限公司

詳細(xì)參數(shù)

  • 型號：

    STG

  • 功能描述：

    IGBT 晶體管 N-Ch 600 Volt 7 Amp

  • RoHS：

    否

  • 制造商：

    Fairchild Semiconductor

  • 配置：

    集電極—發(fā)射極最大電壓

  • VCEO：

    650 V

  • 集電極—射極飽和電壓：

    2.3 V

  • 柵極/發(fā)射極最大電壓：

    20 V 在25

  • C的連續(xù)集電極電流：

    150 A

  • 柵極—射極漏泄電流：

    400 nA

  • 功率耗散：

    187 W

  • 封裝/箱體：

    TO-247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
ST
60
全新原裝!優(yōu)勢庫存熱賣中!
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ST
24+
TO252DPAK
8866
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ST全系列
25+23+
DPAK
26278
絕對原裝正品全新進(jìn)口深圳現(xiàn)貨
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ST
1926+
DPAK
6852
只做原裝正品現(xiàn)貨!或訂貨假一賠十!
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ST
24+
TO-252
80000
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增
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STM原廠目錄
24+
DPAK
28500
授權(quán)代理直銷,原廠原裝現(xiàn)貨,假一罰十,特價銷售
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ST/意法
18+PBF
TO-252-2
664
就找我吧!--邀您體驗(yàn)愉快問購元件!
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ST/意法
23+
TO-252-2
50000
全新原裝正品現(xiàn)貨,支持訂貨
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ST
22+
TO-252-2
6000
十年配單,只做原裝
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ST
0628+
TO-252
7
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