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STGB18N40LZT4

Marking：GB18N40LZ；Package：D2PAK；Automotive-grade 390 V internally clamped IGBT ESCIS 180 mJ

Description Thisapplication-specificIGBTutilizesthemostadvancedPowerMESHtechnology optimizedforcoildrivingintheharshenvironmentofautomotiveignitionsystems. Thedeviceshowverylowon-statevoltageandveryhighSCISenergycapabilityover awideoperatingtemperaturerange.

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STGB19NC60H

19 A - 600 V - very fast IGBT

Description ThisIGBTutilizestheadvancedPowerMESH? processresultinginanexcellenttrade-off betweenswitchingperformanceandlowon-state behavior. Features ■Lowon-voltagedrop(VCE(sat)) ■Highfrequencyoperation Applications ■Highfrequencymotordrives ■SMPSandPFCi

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STGB19NC60HT4

Marking：GB19NC60H；Package：D2PAK；19 A - 600 V - very fast IGBT

Description ThisIGBTutilizestheadvancedPowerMESH? processresultinginanexcellenttrade-off betweenswitchingperformanceandlowon-state behavior. Features ■Lowon-voltagedrop(VCE(sat)) ■Highfrequencyoperation Applications ■Highfrequencymotordrives ■SMPSandPFCi

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STGB19NC60S

20 A, 600 V fast IGBT

Description ThisIGBTutilizestheadvancedPowerMESH? processresultinginanexcellenttrade-off betweenswitchingperformanceandlowon-state behavior. Features ■Verylowon-voltagedrop(VCE(sat)) ■Minimumpowerlossesat5kHzinhard switching ■Optimizedperformanceformedium

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STGB19NC60ST4

Marking：GB19NC60S；Package：D2PAK；20 A, 600 V fast IGBT

Description ThisIGBTutilizestheadvancedPowerMESH? processresultinginanexcellenttrade-off betweenswitchingperformanceandlowon-state behavior. Features ■Verylowon-voltagedrop(VCE(sat)) ■Minimumpowerlossesat5kHzinhard switching ■Optimizedperformanceformedium

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STGB20NB32LZ

N-CHANNEL CLAMPED 20A - D2PAK/I2PAK INTERNALLY CLAMPED PowerMESH TM IGBT

DESCRIPTION Usingthelatesthighvoltagetechnologybasedonapatentedstriplayout,STMicroelectronicshasdesignedanadvancedfamilyofIGBTs,thePowerMESH?IGBTs,withoutstandingperformances.Thebuiltincollector-gatezenerexhibitsaverypreciseactiveclampingwhilethegate-emitter

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STGB20NB32LZ-1

N-CHANNEL CLAMPED 20A - D2PAK/I2PAK INTERNALLY CLAMPED PowerMESH TM IGBT

DESCRIPTION Usingthelatesthighvoltagetechnologybasedonapatentedstriplayout,STMicroelectronicshasdesignedanadvancedfamilyofIGBTs,thePowerMESH?IGBTs,withoutstandingperformances.Thebuiltincollector-gatezenerexhibitsaverypreciseactiveclampingwhilethegate-emitter

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STGB20NB32LZT4

N-CHANNEL CLAMPED 20A - D2PAK/I2PAK INTERNALLY CLAMPED PowerMESH TM IGBT

DESCRIPTION Usingthelatesthighvoltagetechnologybasedonapatentedstriplayout,STMicroelectronicshasdesignedanadvancedfamilyofIGBTs,thePowerMESH?IGBTs,withoutstandingperformances.Thebuiltincollector-gatezenerexhibitsaverypreciseactiveclampingwhilethegate-emitter

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STGB20NB37LZ

N-CHANNEL CLAMPED 20A D2PAK INTERNALLY CLAMPED PowerMESH IGBT

DESCRIPTION Usingthelatesthighvoltagetechnologybasedonapatentedstriplayout,STMicroelectronicshasdesignedanadvancedfamilyofIGBTs,thePowerMESH?IGBTs,withoutstandingperformances.Thebuiltincollector-gatezenerexhibitsaverypreciseactiveclampingwhilethegate-emitter

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STGB20NC60V

Marking：GB20NC60V；Package：D2PAK；30 A - 600 V - very fast IGBT

Description ThisIGBTutilizestheadvancedPowerMESH? processresultinginanexcellenttrade-off betweenswitchingperformanceandlowon-state behavior. Features ?Highfrequencyoperationupto50kHz ?LowerCRES/CIESratio(nocross-conduction susceptibility) ?Highcurrentcapa

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

產(chǎn)品屬性

  • 產(chǎn)品編號(hào)：

    STGW45HF60WDI

  • 制造商：

    STMicroelectronics

  • 類別：

    分立半導(dǎo)體產(chǎn)品 > 晶體管 - UGBT、MOSFET - 單

  • 包裝：

    管件

  • 不同?Vge、Ic 時(shí)?Vce(on)（最大值）：

    2.5V @ 15V，30A

  • 開(kāi)關(guān)能量：

    330μJ（關(guān)）

  • 輸入類型：

    標(biāo)準(zhǔn)

  • 25°C 時(shí) Td（開(kāi)/關(guān)）值：

    -/145ns

  • 測(cè)試條件：

    400V，30A，4.7 歐姆，15V

  • 工作溫度：

    -55°C ~ 150°C（TJ）

  • 安裝類型：

    通孔

  • 封裝/外殼：

    TO-247-3

  • 供應(yīng)商器件封裝：

    TO-247 長(zhǎng)引線

  • 描述：

    IGBT 600V 70A 250W TO247

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
ST
2019
TO-247
19700
INFINEON品牌專業(yè)原裝優(yōu)質(zhì)
 詢價(jià)
ST/意法
17+
TO-247TO-247longlead
31518
原裝正品 可含稅交易
 詢價(jià)
ST
25+23+
TO-247
24424
絕對(duì)原裝正品現(xiàn)貨,全新深圳原裝進(jìn)口現(xiàn)貨
 詢價(jià)
ST
1926+
TO-247TO-247
6852
只做原裝正品現(xiàn)貨!或訂貨假一賠十!
 詢價(jià)
STM原廠目錄
24+
TO-247
28500
授權(quán)代理直銷,原廠原裝現(xiàn)貨,假一罰十,特價(jià)銷售
 詢價(jià)
ST
2447
TO-247
100500
一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨
 詢價(jià)
STM
1809+
TO247-3
1675
就找我吧!--邀您體驗(yàn)愉快問(wèn)購(gòu)元件!
 詢價(jià)
22+
NA
207
加我QQ或微信咨詢更多詳細(xì)信息,
 詢價(jià)
ST
22+
TO-247
12245
現(xiàn)貨,原廠原裝假一罰十!
 詢價(jià)
ST/意法
23+
TO-247
10880
原裝正品，支持實(shí)單
 詢價(jià)
更多STG供應(yīng)商 更新時(shí)間2025-4-21 16:20:00

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