STH2

包裝：散裝 類別：工具 線纜扎帶槍和配件 描述：TOOL CABLE TIE LOVOLT LT-HVY

STH200N10WF7-2

Marking：200N10WF7；Package：H2PAK-2；N-channel 100 V, 3.2 mΩ typ., 180 A, STripFET F7 Power MOSFET N-channel 100 V, 3.2 mΩ typ., 180 A, STripFET F7 Power MOSFET

Features ?Best-in-classSOAcapability ?Highcurrentsurgecapability ?Extremelylowon-resistance Applications ?Hot-swap ?Electronicfuse ?Loadswitch ?In-rushcurrentlimiter Description ThisN-channelPowerMOSFETutilizestheSTripFETF7technologywithan enhancedtrenchgat

STH200N55F3-2

Marking：200N55F3；Package：H2PAK；N-channel 55 V, 1.8 mΩ, 160 A, H2PAK STripFET? III Power MOSFET

Features ■Ultralowon-resistance ■100avalanchetested Application ■Switchingapplications Description ThisSTripFET?IIIPowerMOSFETtechnologyis amongthelatestimprovements,whichhavebeen especiallytailoredtominimizeon-stateresistance providingsuperiorswitchingperf

STH210N75F6-2

N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=180A@TC=25℃ ·DrainSourceVoltage-VDSS=75V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3.4mΩ(Max)@VGS=10V APPLICATIONS ·Switchingapplications

STH260N4LF7-2

Marking：260N4LF7；Package：H2PAK-2；N-channel 40 V, 1.2 mΩ typ., 180 A, STripFET? F7 Power MOSFETs in H2PAK-2 and H2PAK-6 packages

Features ?AmongthelowestRDS(on)onthemarket ?Excellentfigureofmerit(FoM) ?LowCrss/CissratioforEMIimmunity ?Highavalancheruggedness Applications ?Switchingapplications Description TheseN-channelPowerMOSFETsutilize STripFET?F7technologywithanenhanced tren

STH260N4LF7-6

Marking：260N4LF7；Package：H2PAK-6；N-channel 40 V, 1.2 mΩ typ., 180 A, STripFET? F7 Power MOSFETs in H2PAK-2 and H2PAK-6 packages

Features ?AmongthelowestRDS(on)onthemarket ?Excellentfigureofmerit(FoM) ?LowCrss/CissratioforEMIimmunity ?Highavalancheruggedness Applications ?Switchingapplications Description TheseN-channelPowerMOSFETsutilize STripFET?F7technologywithanenhanced tren

STH260N6F6-2

N-channel 60 V, 1.7 m廓 typ., 180 A STripFET??VI DeepGATE??Power MOSFET in H?PAK-2 package

Description ThisdeviceisanN-channelPowerMOSFETdevelopedusingthe6thgenerationofSTripFET?DeepGATE?technology,withanewgatestructure.TheresultingPowerMOSFETexhibitsthelowestRDS(on)inallpackages. Features ■Lowgatecharge ■Verylowon-resistance ■Highavalancheru

STH260N6F6-6

N-Channel Power MOSFET

FEATURES ·DrainCurrent-ID=180A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=2.4mΩ(Max)@VGS=10V APPLICATIONS ·Switchingapplications ·Powertools ·Motorcontrol

STH272N6F7-6AG

Marking：272N6F7；Package：H2PAK-6；Automotive-grade N-channel 60 V, 0.95 mΩ typ., 180 A Automotive-grade N-channel 60 V, 0.95 mΩ typ., 180 A

Features ?Designedforautomotiveapplicationsand AEC-Q101qualified ?AmongthelowestRDS(on)onthemarket ?ExcellentFoM(figureofmerit) ?LowCrss/CissratioforEMIimmunity ?Highavalancheruggedness Applications ?Switchingapplications Description ThisN-channelPower

STH2N120K5-2AG

Automotive-grade N-channel 1200 V, 7.25 typ., 1.5 A, MDmesh K5 Power MOSFET in an H2PAK-2 package

Features ?AEC-Q101qualified ?Industry’slowestRDS(on)xarea ?Industry’sbestFoM(figureofmerit) ?Ultra-lowgatecharge ?100avalanchetested Description ThisveryhighvoltageN-channelPowerMOSFETisdesignedusingMDmeshK5 technologybasedonaninnovativeproprietaryvert