首頁 >STGB18N40LZT4>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
STGB18N40LZT4 | Automotive-grade 390 V internally clamped IGBT ESCIS 180 mJ Description Thisapplication-specificIGBTutilizesthemostadvancedPowerMESHtechnology optimizedforcoildrivingintheharshenvironmentofautomotiveignitionsystems. Thedeviceshowverylowon-statevoltageandveryhighSCISenergycapabilityover awideoperatingtemperaturerange. | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | |
STGB18N40LZT4 | EAS 180 mJ - 400 V - internally clamped IGBT Description Thisapplication-specificIGBTutilizesthemostadvancedPowerMESH?technology.Thebuilt-inZenerdiodesbetweengate-collectorandgate-emitterprovideovervoltageprotectioncapabilities.Thedevicealsoexhibitslowon-statevoltagedropandlowthresholddriveforuseinautomot | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | |
STGB18N40LZT4 | EAS 180 mJ - 400 V - internally clamped IGBT | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | |
STGB18N40LZT4 | EAS 180 mJ - 390 V - internally clamped IGBT | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | |
STGB18N40LZT4 | 包裝:管件 封裝/外殼:TO-263-3,D2Pak(2 引線 + 接片),TO-263AB 類別:分立半導(dǎo)體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述:IGBT 420V 30A 150W D2PAK | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | |
EAS180mJ-400V-internallyclampedIGBT Description Thisapplication-specificIGBTutilizesthemostadvancedPowerMESH?technology.Thebuilt-inZenerdiodesbetweengate-collectorandgate-emitterprovideovervoltageprotectioncapabilities.Thedevicealsoexhibitslowon-statevoltagedropandlowthresholddriveforuseinautomot | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
EAS180mJ-390V-internallyclampedIGBT | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
EAS180mJ-400V-internallyclampedIGBT | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
Automotive-grade390VinternallyclampedIGBTESCIS180mJ Description Thisapplication-specificIGBTutilizesthemostadvancedPowerMESHtechnology optimizedforcoildrivingintheharshenvironmentofautomotiveignitionsystems. Thedeviceshowverylowon-statevoltageandveryhighSCISenergycapabilityover awideoperatingtemperaturerange. | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS |
產(chǎn)品屬性
- 產(chǎn)品編號:
STGB18N40LZT4
- 制造商:
STMicroelectronics
- 類別:
分立半導(dǎo)體產(chǎn)品 > 晶體管 - UGBT、MOSFET - 單
- 系列:
Automotive, AEC-Q101, PowerMESH?
- 包裝:
管件
- 不同?Vge、Ic 時?Vce(on)(最大值):
1.7V @ 4.5V,10A
- 輸入類型:
邏輯
- 25°C 時 Td(開/關(guān))值:
650ns/13.5μs
- 測試條件:
300V,10A,5V
- 工作溫度:
-55°C ~ 175°C(TJ)
- 安裝類型:
表面貼裝型
- 封裝/外殼:
TO-263-3,D2Pak(2 引線 + 接片),TO-263AB
- 供應(yīng)商器件封裝:
D2PAK
- 描述:
IGBT 420V 30A 150W D2PAK
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
ST(意法半導(dǎo)體) |
23+ |
TO-263 |
1612 |
原廠訂貨渠道,支持BOM配單一站式服務(wù) |
詢價 | ||
ST/意法 |
21+ |
NA |
12500 |
只做全新原裝公司現(xiàn)貨特價 |
詢價 | ||
STMicroelectronics |
24+ |
TO-263-3,D2Pak(2 引線 + 接片 |
30000 |
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品 |
詢價 | ||
ST/意法 |
24+ |
TO-263 |
1000 |
只做原廠渠道 可追溯貨源 |
詢價 | ||
ST |
21+ |
TO-263 |
10000 |
只做原裝,公司現(xiàn)貨,提供一站式BOM配單服務(wù)! |
詢價 | ||
ST/意法 |
22+ |
TO-263 |
10000 |
原裝正品 |
詢價 | ||
ST |
22+ |
TO-263 |
15000 |
原裝優(yōu)質(zhì)現(xiàn)貨訂貨渠道商 |
詢價 | ||
ST/意法 |
24+ |
TO263 |
16393 |
原裝優(yōu)勢公司現(xiàn)貨! |
詢價 | ||
ST |
23+ |
D2PAK |
12500 |
ST系列在售,可接長單 |
詢價 | ||
ST |
新批次 |
TO-263 |
3000 |
詢價 |
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