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STGB18N40LZT4

Automotive-grade 390 V internally clamped IGBT ESCIS 180 mJ

Description Thisapplication-specificIGBTutilizesthemostadvancedPowerMESHtechnology optimizedforcoildrivingintheharshenvironmentofautomotiveignitionsystems. Thedeviceshowverylowon-statevoltageandveryhighSCISenergycapabilityover awideoperatingtemperaturerange.

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STGB18N40LZT4

EAS 180 mJ - 400 V - internally clamped IGBT

Description Thisapplication-specificIGBTutilizesthemostadvancedPowerMESH?technology.Thebuilt-inZenerdiodesbetweengate-collectorandgate-emitterprovideovervoltageprotectioncapabilities.Thedevicealsoexhibitslowon-statevoltagedropandlowthresholddriveforuseinautomot

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STGB18N40LZT4

EAS 180 mJ - 400 V - internally clamped IGBT

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STGB18N40LZT4

EAS 180 mJ - 390 V - internally clamped IGBT

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STGB18N40LZT4

包裝:管件 封裝/外殼:TO-263-3,D2Pak(2 引線 + 接片),TO-263AB 類別:分立半導(dǎo)體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述:IGBT 420V 30A 150W D2PAK

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STGD18N40LZT4

EAS180mJ-400V-internallyclampedIGBT

Description Thisapplication-specificIGBTutilizesthemostadvancedPowerMESH?technology.Thebuilt-inZenerdiodesbetweengate-collectorandgate-emitterprovideovervoltageprotectioncapabilities.Thedevicealsoexhibitslowon-statevoltagedropandlowthresholddriveforuseinautomot

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STGD18N40LZT4

EAS180mJ-390V-internallyclampedIGBT

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STGD18N40LZT4

EAS180mJ-400V-internallyclampedIGBT

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STGD18N40LZT4

Automotive-grade390VinternallyclampedIGBTESCIS180mJ

Description Thisapplication-specificIGBTutilizesthemostadvancedPowerMESHtechnology optimizedforcoildrivingintheharshenvironmentofautomotiveignitionsystems. Thedeviceshowverylowon-statevoltageandveryhighSCISenergycapabilityover awideoperatingtemperaturerange.

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

產(chǎn)品屬性

  • 產(chǎn)品編號:

    STGB18N40LZT4

  • 制造商:

    STMicroelectronics

  • 類別:

    分立半導(dǎo)體產(chǎn)品 > 晶體管 - UGBT、MOSFET - 單

  • 系列:

    Automotive, AEC-Q101, PowerMESH?

  • 包裝:

    管件

  • 不同?Vge、Ic 時?Vce(on)(最大值):

    1.7V @ 4.5V,10A

  • 輸入類型:

    邏輯

  • 25°C 時 Td(開/關(guān))值:

    650ns/13.5μs

  • 測試條件:

    300V,10A,5V

  • 工作溫度:

    -55°C ~ 175°C(TJ)

  • 安裝類型:

    表面貼裝型

  • 封裝/外殼:

    TO-263-3,D2Pak(2 引線 + 接片),TO-263AB

  • 供應(yīng)商器件封裝:

    D2PAK

  • 描述:

    IGBT 420V 30A 150W D2PAK

供應(yīng)商型號品牌批號封裝庫存備注價格
ST(意法半導(dǎo)體)
23+
TO-263
1612
原廠訂貨渠道,支持BOM配單一站式服務(wù)
詢價
ST/意法
21+
NA
12500
只做全新原裝公司現(xiàn)貨特價
詢價
STMicroelectronics
24+
TO-263-3,D2Pak(2 引線 + 接片
30000
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品
詢價
ST/意法
24+
TO-263
1000
只做原廠渠道 可追溯貨源
詢價
ST
21+
TO-263
10000
只做原裝,公司現(xiàn)貨,提供一站式BOM配單服務(wù)!
詢價
ST/意法
22+
TO-263
10000
原裝正品
詢價
ST
22+
TO-263
15000
原裝優(yōu)質(zhì)現(xiàn)貨訂貨渠道商
詢價
ST/意法
24+
TO263
16393
原裝優(yōu)勢公司現(xiàn)貨!
詢價
ST
23+
D2PAK
12500
ST系列在售,可接長單
詢價
ST
新批次
TO-263
3000
詢價
更多STGB18N40LZT4供應(yīng)商 更新時間2024-12-22 8:12:00