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PHD3055L

PowerMOS transistor Logic level FET

GENERALDESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorinaplasticenvelopesuitableforsurfacemountingfeaturinghighavalancheenergycapability,stableblockingvoltage,fastswitchingandhighthermalcyclingperformancewithlowthermalresistance.Intend

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PHP3055

N-channelTrenchMOStransistor

GENERALDESCRIPTION N-channelenhancementmode,field-effectpowertransistorinaplasticenvelopeusing’trench’technology. FEATURES ?’Trench’technology ?Lowon-stateresistance ?Fastswitching

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PHP3055E

N-channelTrenchMOStransistor

GENERALDESCRIPTION N-channelenhancementmode,field-effectpowertransistorinaplasticenvelopeusing’trench’technology. FEATURES ?’Trench’technology ?Lowon-stateresistance ?Fastswitching

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PHP3055E

N-channelTrenchMOSstandardlevelFET

Generaldescription StandardlevelN-channelenhancementmodeField-EffectTransistor(FET)inaplasticpackageusingTrenchMOStechnology.Thisproductisdesignedandqualifiedforuseincomputing,communications,consumerandindustrialapplicationsonly Featuresandbenefits ■Lowconduct

nxpNXP Semiconductors

恩智浦恩智浦半導體公司

PHP3055L

PowerMOStransistorLogiclevelFET

GENERALDESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorinaplasticenvelopefeaturinghighavalancheenergycapability,stableblockingvoltage,fastswitchingandhighthermalcyclingperformancewithlowthermalresistance.IntendedforuseinSwitchedModePo

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PHX3055E

N-channelTrenchMOStransistor

GENERALDESCRIPTION N-channelenhancementmode,field-effectpowertransistorinaplasticenvelopewithanelectricallyisolatedmountingtab.Thedeviceuses’trench’technologytoachievelowon-stateresistance. FEATURES ?’Trench’technology ?Lowon-stateresistance ?Fastswitching ?

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PHX3055L

PowerMOStransistorLogiclevelFET

GENERALDESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorinaplasticfull-packenvelope.Thedevicefeatureshighavalancheenergycapability,stableblockingvoltage,fastswitchingandhighthermalcyclingperformancewithlowthermalresistance.Intendedforus

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PVA3055N

MicroelectronicPowerICHEXFETPowerMOSFETPhotovoltaicRelaySingle-Pole,Normally-Open0-300VAC/DC,50mA

IRF

International Rectifier

PVA3055NPBF

MicroelectronicPowerICHEXFET?PowerMOSFETPhotovoltaicRelaySingle-Pole,Normally-Open0-300VAC/DC,50mA

IRF

International Rectifier

PVA3055NS

MicroelectronicPowerICHEXFETPowerMOSFETPhotovoltaicRelaySingle-Pole,Normally-Open0-300VAC/DC,50mA

IRF

International Rectifier

PVA3055NSPBF

MicroelectronicPowerICHEXFET?PowerMOSFETPhotovoltaicRelaySingle-Pole,Normally-Open0-300VAC/DC,50mA

IRF

International Rectifier

QPA3055P

100WS-BandGaNPowerAmplifier

QORVO

Qorvo, Inc

RCA3055

SILICONN-P-NVERSAWATTTRANSISTORS

SILICONN-P-NVERSAWATTTRANSISTORS DesignedforMedium-PowerLinearandSwitchingServiceinConsumer,Automotive,andIndustrialApplications

GESS

GE Solid State

RCA3055

SILICONN-P-NVERSAWATTTRANSISTORS

High-Current,SiliconN-P-NVERSAWATTTransistors

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體產品股份有限公司

RFD3055

12A,60V,0.150Ohm,N-ChannelPowerMOSFETs

TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchas

Intersil

Intersil Corporation

RFD3055

11A,60V,0.107Ohm,LogicLevel,N-ChannelPowerMOSFETs

TheseN-Channelenhancement-modepowerMOSFETsaremanufacturedusingthelatestmanufacturingprocesstechnology.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapp

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

RFD3055

12A,60V,0.150Ohm,N-ChannelPowerMOSFETs

TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstanda specifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuch

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

RFD3055

12A,60V,AvalancheRated,N-ChannelEnhancement-ModePowerMOSFETs(MegaFETs)

Description TheRFD3055,RFD3055SMandRFP3055N-ChannelpowerMOSFETsaremanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedfor

HARRIS

Harris Corporation

RFD3055LE

11A,60V,0.107Ohm,LogicLevel,N-ChannelPowerMOSFETs

TheseN-Channelenhancement-modepowerMOSFETsaremanufacturedusingthelatestmanufacturingprocesstechnology.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapp

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

RFD3055LE

11A,60V,0.107Ohm,LogicLevel,N-ChannelPowerMOSFETs

TheseN-Channelenhancement-modepowerMOSFETsaremanufacturedusingthelatestmanufacturingprocesstechnology.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapp

Intersil

Intersil Corporation

詳細參數

  • 型號：

    PHD3055L

  • 制造商：

    PHILIPS

  • 制造商全稱：

    NXP Semiconductors

  • 功能描述：

    PowerMOS transistor Logic level FET

供應商型號品牌批號封裝庫存備注價格
NXP
23+
TO-252
11846
一級代理商現貨批發(fā),原裝正品,假一罰十
 詢價
VB
2019
SOT428(D
55000
絕對原裝正品假一罰十!
 詢價
NXP
2020+
TO-252
80000
只做自己庫存,全新原裝進口正品假一賠百,可開13%增
 詢價
PHILIPS
2023+
80000
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品
 詢價
PHILIPS
2020+
SOT428(D-PAK)
16800
絕對原裝進口現貨,假一賠十,價格優(yōu)勢!?
 詢價
NEC
23+
TO-220F
69820
終端可以免費供樣,支持BOM配單!
 詢價
PHILIPS
1709+
TO-252/D-PAK
32500
普通
 詢價
NXP/恩智浦
21+
TO-252(DPAK)
30000
只做正品原裝現貨
 詢價
NXP/恩智浦
2021+
SOT252
100500
一級代理專營品牌!原裝正品,優(yōu)勢現貨,長期排單到貨
 詢價
NXP
22+
TO-252
28600
只做原裝正品現貨假一賠十一級代理
 詢價
更多PHD3055L供應商 更新時間2024-10-24 14:46:00

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