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RCA3055

SILICON N-P-N VERSAWATT TRANSISTORS

SILICONN-P-NVERSAWATTTRANSISTORS DesignedforMedium-PowerLinearandSwitchingServiceinConsumer,Automotive,andIndustrialApplications

GESS

GE Solid State

RCA3055

SILICON N-P-N VERSAWATT TRANSISTORS

High-Current,SiliconN-P-NVERSAWATTTransistors

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體產(chǎn)品股份有限公司

RFD3055

12A,60V,0.150Ohm,N-ChannelPowerMOSFETs

TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchas

Intersil

Intersil Corporation

RFD3055

11A,60V,0.107Ohm,LogicLevel,N-ChannelPowerMOSFETs

TheseN-Channelenhancement-modepowerMOSFETsaremanufacturedusingthelatestmanufacturingprocesstechnology.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapp

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

RFD3055

12A,60V,0.150Ohm,N-ChannelPowerMOSFETs

TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstanda specifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuch

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

RFD3055

12A,60V,AvalancheRated,N-ChannelEnhancement-ModePowerMOSFETs(MegaFETs)

Description TheRFD3055,RFD3055SMandRFP3055N-ChannelpowerMOSFETsaremanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedfor

HARRIS

Harris Corporation

RFD3055LE

11A,60V,0.107Ohm,LogicLevel,N-ChannelPowerMOSFETs

TheseN-Channelenhancement-modepowerMOSFETsaremanufacturedusingthelatestmanufacturingprocesstechnology.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapp

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

RFD3055LE

11A,60V,0.107Ohm,LogicLevel,N-ChannelPowerMOSFETs

TheseN-Channelenhancement-modepowerMOSFETsaremanufacturedusingthelatestmanufacturingprocesstechnology.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapp

Intersil

Intersil Corporation

RFD3055LE

N-ChannelLogicLevelPowerMOSFET

TheseN-Channelenhancement-modepowerMOSFETsaremanufacturedusingthelatestmanufacturingprocesstechnology.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapp

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

RFD3055LE

N-Channel60V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體（臺灣）有限公司

晶體管資料

  • 型號：

    RCA3055

  • 別名：

    三極管、晶體管、晶體三極管

  • 生產(chǎn)廠家：

  • 制作材料：

    Si-NPN

  • 性質(zhì)：

    低頻或音頻放大 （LF）_通用 （G）

  • 封裝形式：

    直插封裝

  • 極限工作電壓：

    100V

  • 最大電流允許值：

    15A

  • 最大工作頻率：

    <1MHZ或未知

  • 引腳數(shù)：

    2

  • 可代換的型號：

    BDX73,2N6101,2SC2541,3DD162B,

  • 最大耗散功率：

    75W

  • 放大倍數(shù)：

  • 圖片代號：

    B-8

  • vtest：

    100

  • htest：

    999900

  • atest：

    15

  • wtest：

    75

詳細參數(shù)

  • 型號：

    RCA3055

  • 制造商：

    Rochester Electronics LLC

  • 功能描述：

    - Bulk

供應(yīng)商型號品牌批號封裝庫存備注價格
24+
5
自己現(xiàn)貨
 詢價
GESS
23+
NA
39960
只做進口原裝,終端工廠免費送樣
 詢價
HAR
23+
RCA3055
13528
振宏微原裝正品,假一罰百
 詢價
23+
11200
原廠授權(quán)一級代理、全球訂貨優(yōu)勢渠道、可提供一站式BO
 詢價
24+
N/A
82000
一級代理-主營優(yōu)勢-實惠價格-不悔選擇
 詢價
RCA31A
2
2
詢價
KAMAYAOHM
4Xl16
60000
全新原裝現(xiàn)貨 樣品可售
 詢價
ROCKWELL
25+
PLCC68
1500
原裝現(xiàn)貨熱賣中,提供一站式真芯服務(wù)
 詢價
ROCKWELL
23+
QFP
5000
原裝正品,假一罰十
 詢價
ROCKWELL
2023+
3000
進口原裝現(xiàn)貨
 詢價
更多RCA3055供應(yīng)商 更新時間2025-4-1 16:00:00

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