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PHP3055L

PowerMOS transistor Logic level FET

GENERALDESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorinaplasticenvelopefeaturinghighavalancheenergycapability,stableblockingvoltage,fastswitchingandhighthermalcyclingperformancewithlowthermalresistance.IntendedforuseinSwitchedModePo

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PHX3055E

N-channelTrenchMOStransistor

GENERALDESCRIPTION N-channelenhancementmode,field-effectpowertransistorinaplasticenvelopewithanelectricallyisolatedmountingtab.Thedeviceuses’trench’technologytoachievelowon-stateresistance. FEATURES ?’Trench’technology ?Lowon-stateresistance ?Fastswitching ?

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PHX3055L

PowerMOStransistorLogiclevelFET

GENERALDESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorinaplasticfull-packenvelope.Thedevicefeatureshighavalancheenergycapability,stableblockingvoltage,fastswitchingandhighthermalcyclingperformancewithlowthermalresistance.Intendedforus

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

PVA3055N

MicroelectronicPowerICHEXFETPowerMOSFETPhotovoltaicRelaySingle-Pole,Normally-Open0-300VAC/DC,50mA

IRF

International Rectifier

PVA3055NPBF

MicroelectronicPowerICHEXFET?PowerMOSFETPhotovoltaicRelaySingle-Pole,Normally-Open0-300VAC/DC,50mA

IRF

International Rectifier

PVA3055NS

MicroelectronicPowerICHEXFETPowerMOSFETPhotovoltaicRelaySingle-Pole,Normally-Open0-300VAC/DC,50mA

IRF

International Rectifier

PVA3055NSPBF

MicroelectronicPowerICHEXFET?PowerMOSFETPhotovoltaicRelaySingle-Pole,Normally-Open0-300VAC/DC,50mA

IRF

International Rectifier

QPA3055P

100WS-BandGaNPowerAmplifier

QORVO

Qorvo, Inc

RCA3055

SILICONN-P-NVERSAWATTTRANSISTORS

SILICONN-P-NVERSAWATTTRANSISTORS DesignedforMedium-PowerLinearandSwitchingServiceinConsumer,Automotive,andIndustrialApplications

GESS

GE Solid State

RCA3055

SILICONN-P-NVERSAWATTTRANSISTORS

High-Current,SiliconN-P-NVERSAWATTTransistors

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

RFD3055

12A,60V,0.150Ohm,N-ChannelPowerMOSFETs

TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchas

Intersil

Intersil Corporation

RFD3055

11A,60V,0.107Ohm,LogicLevel,N-ChannelPowerMOSFETs

TheseN-Channelenhancement-modepowerMOSFETsaremanufacturedusingthelatestmanufacturingprocesstechnology.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapp

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

RFD3055

12A,60V,0.150Ohm,N-ChannelPowerMOSFETs

TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstanda specifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuch

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

RFD3055

12A,60V,AvalancheRated,N-ChannelEnhancement-ModePowerMOSFETs(MegaFETs)

Description TheRFD3055,RFD3055SMandRFP3055N-ChannelpowerMOSFETsaremanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedfor

HARRIS

Harris Corporation

RFD3055LE

11A,60V,0.107Ohm,LogicLevel,N-ChannelPowerMOSFETs

TheseN-Channelenhancement-modepowerMOSFETsaremanufacturedusingthelatestmanufacturingprocesstechnology.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapp

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

RFD3055LE

11A,60V,0.107Ohm,LogicLevel,N-ChannelPowerMOSFETs

TheseN-Channelenhancement-modepowerMOSFETsaremanufacturedusingthelatestmanufacturingprocesstechnology.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapp

Intersil

Intersil Corporation

RFD3055LE

N-ChannelLogicLevelPowerMOSFET

TheseN-Channelenhancement-modepowerMOSFETsaremanufacturedusingthelatestmanufacturingprocesstechnology.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapp

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

RFD3055LE

N-Channel60V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

RFD3055LESM

11A,60V,0.107Ohm,LogicLevel,N-ChannelPowerMOSFETs

TheseN-Channelenhancement-modepowerMOSFETsaremanufacturedusingthelatestmanufacturingprocesstechnology.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapp

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

RFD3055LESM

11A,60V,0.107Ohm,LogicLevel,N-ChannelPowerMOSFETs

TheseN-Channelenhancement-modepowerMOSFETsaremanufacturedusingthelatestmanufacturingprocesstechnology.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapp

Intersil

Intersil Corporation

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
PHILIPS/飛利浦
17+
TO-220
31518
原裝正品 可含稅交易
詢價(jià)
24+
3000
公司存貨
詢價(jià)
NXP
23+
TO-220
11846
一級(jí)代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
詢價(jià)
NXP
1822+
TO220
9852
只做原裝正品假一賠十為客戶做到零風(fēng)險(xiǎn)!!
詢價(jià)
NXP
18+
TO220
41200
原裝正品,現(xiàn)貨特價(jià)
詢價(jià)
飛利浦
2023+
TO-220
80000
一級(jí)代理/分銷渠道價(jià)格優(yōu)勢(shì) 十年芯程一路只做原裝正品
詢價(jià)
PHILIPS
2020+
SOT78(TO-220)
16800
絕對(duì)原裝進(jìn)口現(xiàn)貨,假一賠十,價(jià)格優(yōu)勢(shì)!?
詢價(jià)
JINGDAO/晶導(dǎo)微
23+
SMC(DO-214AB)
69820
終端可以免費(fèi)供樣,支持BOM配單!
詢價(jià)
N
23+
TO220AB
10000
公司只做原裝正品
詢價(jià)
N
23+
TO220AB
6000
原裝正品,支持實(shí)單
詢價(jià)
更多PHP3055L供應(yīng)商 更新時(shí)間2024-12-25 14:00:00