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PVA3055N

Microelectronic Power IC HEXFET Power MOSFET Photovoltaic Relay Single-Pole, Normally-Open 0-300V AC/DC, 50mA

IRF

International Rectifier

PVA3055N

包裝:管件 封裝/外殼:8-DIP(0.300",7.62mm),4 引線 類別:繼電器 固態(tài)繼電器 描述:SSR RELAY SPST-NO 50MA 0-300V

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

PVA3055N

包裝:管件 封裝/外殼:8-DIP(0.300",7.62mm),4 引線 類別:繼電器 固態(tài)繼電器 描述:SSR RELAY SPST-NO 50MA 0-300V

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

PVA3055NPBF

Microelectronic Power IC HEXFET? Power MOSFET Photovoltaic Relay Single-Pole, Normally-Open 0-300V AC/DC, 50mA

IRF

International Rectifier

PVA3055NS

Microelectronic Power IC HEXFET Power MOSFET Photovoltaic Relay Single-Pole, Normally-Open 0-300V AC/DC, 50mA

IRF

International Rectifier

PVA3055NSPBF

Microelectronic Power IC HEXFET? Power MOSFET Photovoltaic Relay Single-Pole, Normally-Open 0-300V AC/DC, 50mA

IRF

International Rectifier

PVA3055NPBF

包裝:管件 封裝/外殼:8-DIP(0.300",7.62mm),4 引線 類別:繼電器 固態(tài)繼電器 描述:SSR RELAY SPST-NO 50MA 0-300V

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

QPA3055P

100WS-BandGaNPowerAmplifier

QORVO

Qorvo, Inc

RCA3055

SILICONN-P-NVERSAWATTTRANSISTORS

SILICONN-P-NVERSAWATTTRANSISTORS DesignedforMedium-PowerLinearandSwitchingServiceinConsumer,Automotive,andIndustrialApplications

GESS

GE Solid State

RCA3055

SILICONN-P-NVERSAWATTTRANSISTORS

High-Current,SiliconN-P-NVERSAWATTTransistors

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

RFD3055

12A,60V,0.150Ohm,N-ChannelPowerMOSFETs

TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchas

Intersil

Intersil Corporation

RFD3055

11A,60V,0.107Ohm,LogicLevel,N-ChannelPowerMOSFETs

TheseN-Channelenhancement-modepowerMOSFETsaremanufacturedusingthelatestmanufacturingprocesstechnology.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapp

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

RFD3055

12A,60V,0.150Ohm,N-ChannelPowerMOSFETs

TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstanda specifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuch

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

RFD3055

12A,60V,AvalancheRated,N-ChannelEnhancement-ModePowerMOSFETs(MegaFETs)

Description TheRFD3055,RFD3055SMandRFP3055N-ChannelpowerMOSFETsaremanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedfor

HARRIS

Harris Corporation

RFD3055LE

11A,60V,0.107Ohm,LogicLevel,N-ChannelPowerMOSFETs

TheseN-Channelenhancement-modepowerMOSFETsaremanufacturedusingthelatestmanufacturingprocesstechnology.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapp

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

RFD3055LE

11A,60V,0.107Ohm,LogicLevel,N-ChannelPowerMOSFETs

TheseN-Channelenhancement-modepowerMOSFETsaremanufacturedusingthelatestmanufacturingprocesstechnology.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapp

Intersil

Intersil Corporation

RFD3055LE

N-ChannelLogicLevelPowerMOSFET

TheseN-Channelenhancement-modepowerMOSFETsaremanufacturedusingthelatestmanufacturingprocesstechnology.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapp

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

RFD3055LE

N-Channel60V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

RFD3055LESM

11A,60V,0.107Ohm,LogicLevel,N-ChannelPowerMOSFETs

TheseN-Channelenhancement-modepowerMOSFETsaremanufacturedusingthelatestmanufacturingprocesstechnology.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapp

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

RFD3055LESM

11A,60V,0.107Ohm,LogicLevel,N-ChannelPowerMOSFETs

TheseN-Channelenhancement-modepowerMOSFETsaremanufacturedusingthelatestmanufacturingprocesstechnology.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapp

Intersil

Intersil Corporation

產(chǎn)品屬性

  • 產(chǎn)品編號(hào):

    PVA3055N

  • 制造商:

    Infineon Technologies

  • 類別:

    繼電器 > 固態(tài)繼電器

  • 系列:

    PVA, HEXFET?

  • 包裝:

    管件

  • 安裝類型:

    通孔

  • 電路:

    SPST-NO(1 Form A)

  • 輸出類型:

    AC,DC

  • 電壓 - 輸入:

    1.2VDC

  • 端接樣式:

    PC 引腳

  • 封裝/外殼:

    8-DIP(0.300",7.62mm),4 引線

  • 供應(yīng)商器件封裝:

    8-dip 改進(jìn)型

  • 描述:

    SSR RELAY SPST-NO 50MA 0-300V

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
IR
04+
2000
詢價(jià)
IOR
24+
DIP-4
1764
詢價(jià)
IR
23+
DIP4
10000
原裝正品,假一罰十
詢價(jià)
IR
2020+
DIP4
350000
100%進(jìn)口原裝正品公司現(xiàn)貨庫(kù)存
詢價(jià)
IRF
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
詢價(jià)
I0R
18+
DIP
85600
保證進(jìn)口原裝可開(kāi)17%增值稅發(fā)票
詢價(jià)
IR
05+
DIP4
6000
絕對(duì)原裝自己現(xiàn)貨
詢價(jià)
IR
2019
DIP4
55000
絕對(duì)原裝正品假一罰十!
詢價(jià)
IOR
專業(yè)光耦
DIP4
65800
光耦原裝優(yōu)勢(shì)主營(yíng)型號(hào)-可開(kāi)原型號(hào)增稅票
詢價(jià)
IOR
2023+
DIP4
80000
一級(jí)代理/分銷渠道價(jià)格優(yōu)勢(shì) 十年芯程一路只做原裝正品
詢價(jià)
更多PVA3055N供應(yīng)商 更新時(shí)間2021-9-16 14:01:00