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零件編號(hào)	下載&訂購(gòu)	功能描述	制造商&上傳企業(yè)	LOGO
RFD3055	文件：416.36 Kbytes Page：8 Pages	11A, 60V, 0.107 Ohm, Logic Level, N-Channel Power MOSFETs TheseN-Channelenhancement-modepowerMOSFETsaremanufacturedusingthelatestmanufacturingprocesstechnology.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapp	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
RFD3055	文件：82.17 Kbytes Page：8 Pages	12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchas	Intersil Intersil Corporation	Intersil
RFD3055	文件：418.34 Kbytes Page：8 Pages	12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstanda specifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuch	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
RFD3055	文件：118.15 Kbytes Page：8 Pages	12A, 60V, Avalanche Rated, N-Channel Enhancement-Mode Power MOSFETs (MegaFETs) Description TheRFD3055,RFD3055SMandRFP3055N-ChannelpowerMOSFETsaremanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedfor	HARRIS Harris Corporation	HARRIS
RFD3055LE	文件：416.36 Kbytes Page：8 Pages	11A, 60V, 0.107 Ohm, Logic Level, N-Channel Power MOSFETs TheseN-Channelenhancement-modepowerMOSFETsaremanufacturedusingthelatestmanufacturingprocesstechnology.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapp	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
RFD3055LE	文件：86.26 Kbytes Page：8 Pages	11A, 60V, 0.107 Ohm, Logic Level, N-Channel Power MOSFETs TheseN-Channelenhancement-modepowerMOSFETsaremanufacturedusingthelatestmanufacturingprocesstechnology.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapp	Intersil Intersil Corporation	Intersil
RFD3055LE	文件：1.37302 Mbytes Page：8 Pages	N-Channel Logic Level Power MOSFET TheseN-Channelenhancement-modepowerMOSFETsaremanufacturedusingthelatestmanufacturingprocesstechnology.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapp	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
RFD3055LESM	文件：416.36 Kbytes Page：8 Pages	11A, 60V, 0.107 Ohm, Logic Level, N-Channel Power MOSFETs TheseN-Channelenhancement-modepowerMOSFETsaremanufacturedusingthelatestmanufacturingprocesstechnology.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapp	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
RFD3055LESM	文件：86.26 Kbytes Page：8 Pages	11A, 60V, 0.107 Ohm, Logic Level, N-Channel Power MOSFETs TheseN-Channelenhancement-modepowerMOSFETsaremanufacturedusingthelatestmanufacturingprocesstechnology.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapp	Intersil Intersil Corporation	Intersil
RFD3055LESM	文件：1.37302 Mbytes Page：8 Pages	N-Channel Logic Level Power MOSFET TheseN-Channelenhancement-modepowerMOSFETsaremanufacturedusingthelatestmanufacturingprocesstechnology.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapp	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
RFD3055LESM	文件：780.09 Kbytes Page：5 Pages	N-channel Enhancement Mode Power MOSFET Features ?VDS=60V,ID=50A RDS(ON)	BychipBYCHIP ELECTRONICS CO., LIMITED 百域芯深圳市百域芯科技有限公司	Bychip
RFD3055LESM9A	文件：1.37302 Mbytes Page：8 Pages	N-Channel Logic Level Power MOSFET TheseN-Channelenhancement-modepowerMOSFETsaremanufacturedusingthelatestmanufacturingprocesstechnology.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapp	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
RFD3055SM	文件：82.17 Kbytes Page：8 Pages	12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchas	Intersil Intersil Corporation	Intersil
RFD3055SM	文件：418.34 Kbytes Page：8 Pages	12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstanda specifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuch	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
RFD3055SM	文件：118.15 Kbytes Page：8 Pages	12A, 60V, Avalanche Rated, N-Channel Enhancement-Mode Power MOSFETs (MegaFETs) Description TheRFD3055,RFD3055SMandRFP3055N-ChannelpowerMOSFETsaremanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedfor	HARRIS Harris Corporation	HARRIS
RFD3055SM9A	文件：424.04 Kbytes Page：8 Pages	12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstanda specifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuch	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
RFD3055SM9A	文件：780.06 Kbytes Page：5 Pages	N-channel Enhancement Mode Power MOSFET Features ?VDS=60V,ID=50A RDS(ON)	BychipBYCHIP ELECTRONICS CO., LIMITED 百域芯深圳市百域芯科技有限公司	Bychip
RFD3055LE	文件：960.61 Kbytes Page：7 Pages	N-Channel 60 V (D-S) MOSFET	VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司	VBSEMI
RFD3055LESM9A	文件：1.00467 Mbytes Page：8 Pages	N-Channel 60 V (D-S) MOSFET	VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司	VBSEMI

詳細(xì)參數(shù)

型號(hào)：
RFD3055
功能描述：
MOSFET Power MOSFET N-Ch 60V/12a/0.150 Ohm
RoHS：
否
制造商：
STMicroelectronics
晶體管極性：
N-Channel
汲極/源極擊穿電壓：
650 V
閘/源擊穿電壓：
25 V
漏極連續(xù)電流：
130 A 電阻汲極/源極
RDS（導(dǎo)通）：
0.014 Ohms
配置：
Single
安裝風(fēng)格：
Through Hole
封裝/箱體：
Max247
封裝：
Tube

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
深圳市亞泰盈科電子有限公司	RFD3055	FAIRCHILD		SOT-252	30216	提供BOM表配單TEL:0755-83759919QQ:2355705587杜S	詢價(jià)
深圳市億順芯科技有限公司	RFD3055	FAIRCHILD/仙童	20+原裝正品	TO-252	6000	大量現(xiàn)貨,免費(fèi)發(fā)樣。	詢價(jià)
深圳市坤融電子科技有限公司	RFD3055	FAIRCHILD/仙童	24+	252	30000	只做原廠渠道可追溯貨源	詢價(jià)
深圳市芯祺盛科技有限公司	RFD3055	FSC		TO-252	10	原裝庫(kù)存有訂單來(lái)談優(yōu)勢(shì)	詢價(jià)
深圳市創(chuàng)新跡電子有限公司	RFD3055	FSC	2021+	TO-252	6800	原廠原裝,歡迎咨詢	詢價(jià)
深圳市高捷芯城科技有限公司	RFD3055	onsemi(安森美)	23+	IPAK	7845	支持大陸交貨,美金交易。原裝現(xiàn)貨庫(kù)存。	詢價(jià)
深圳市匯萊威科技有限公司	RFD3055	ON/安森美	24+	TO-252	505348	免費(fèi)送樣原盒原包現(xiàn)貨一手渠道聯(lián)系	詢價(jià)
深圳市艾宇特電子科技有限公司	RFD3055	FSC	23+	TO-252	6850	只做原廠原裝正品現(xiàn)貨!假一賠十!	詢價(jià)
深圳市一線半導(dǎo)體有限公司	RFD3055	FAIRCHILD	24+	TO-252	36800		詢價(jià)
深圳市毅創(chuàng)騰電子科技有限公司	RFD3055			TO-251	1000	原裝長(zhǎng)期供貨!	詢價(jià)

更多RFD3055供應(yīng)商更新時(shí)間2024-12-25 14:00:00

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