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RFD3055LE

11A,60V,0.107Ohm,LogicLevel,N-ChannelPowerMOSFETs

TheseN-Channelenhancement-modepowerMOSFETsaremanufacturedusingthelatestmanufacturingprocesstechnology.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapp

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

RFD3055LE

11A,60V,0.107Ohm,LogicLevel,N-ChannelPowerMOSFETs

TheseN-Channelenhancement-modepowerMOSFETsaremanufacturedusingthelatestmanufacturingprocesstechnology.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapp

Intersil

Intersil Corporation

RFD3055LE

N-ChannelLogicLevelPowerMOSFET

TheseN-Channelenhancement-modepowerMOSFETsaremanufacturedusingthelatestmanufacturingprocesstechnology.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapp

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

RFD3055LE

N-Channel60V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司

RFD3055LESM

11A,60V,0.107Ohm,LogicLevel,N-ChannelPowerMOSFETs

TheseN-Channelenhancement-modepowerMOSFETsaremanufacturedusingthelatestmanufacturingprocesstechnology.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapp

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

RFD3055LESM

11A,60V,0.107Ohm,LogicLevel,N-ChannelPowerMOSFETs

TheseN-Channelenhancement-modepowerMOSFETsaremanufacturedusingthelatestmanufacturingprocesstechnology.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapp

Intersil

Intersil Corporation

RFD3055LESM

N-ChannelLogicLevelPowerMOSFET

TheseN-Channelenhancement-modepowerMOSFETsaremanufacturedusingthelatestmanufacturingprocesstechnology.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapp

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

RFD3055LESM

N-channelEnhancementModePowerMOSFET

Features ?VDS=60V,ID=50A RDS(ON)

BychipBYCHIP ELECTRONICS CO., LIMITED

百域芯深圳市百域芯科技有限公司

RFD3055SM

12A,60V,AvalancheRated,N-ChannelEnhancement-ModePowerMOSFETs(MegaFETs)

Description TheRFD3055,RFD3055SMandRFP3055N-ChannelpowerMOSFETsaremanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedfor

HARRIS

Harris Corporation

RFD3055SM

12A,60V,0.150Ohm,N-ChannelPowerMOSFETs

TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstanda specifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuch

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

產(chǎn)品屬性

  • 產(chǎn)品編號:

    OK3055E-R52

  • 制造商:

    Ohmite

  • 類別:

    電阻器 > 通孔式電阻器

  • 系列:

    Little Rebel? OK

  • 包裝:

    卷帶(TR)

  • 容差:

    ±5%

  • 功率 (W):

    0.25W,1/4W

  • 成分:

    炭膜

  • 溫度系數(shù):

    -800/ +1500ppm/°C

  • 封裝/外殼:

    軸向

  • 供應(yīng)商器件封裝:

    軸向

  • 大小 / 尺寸:

    0.098" 直徑 x 0.268" 長(2.50mm x 6.80mm)

  • 描述:

    RES 3M OHM 5% 1/4W AXIAL

供應(yīng)商型號品牌批號封裝庫存備注價格
YXC揚興科技
21+
標(biāo)準(zhǔn)封裝
370
保證原裝正品,需要聯(lián)系張小姐 13544103396 微信同號
詢價
YXC揚興科技
22+
N/A
2500
進口原裝,優(yōu)勢現(xiàn)貨
詢價
YXC(揚興晶振)
24+
SMD32254P
7350
現(xiàn)貨供應(yīng),當(dāng)天可交貨!免費送樣,原廠技術(shù)支持!!!
詢價
YXC揚興科技
11
詢價
24+
N/A
82000
一級代理-主營優(yōu)勢-實惠價格-不悔選擇
詢價
YXC揚興科技
24+
con
10000
查現(xiàn)貨到京北通宇商城
詢價
YXC/揚興
24+
con
3000
國產(chǎn)代理品牌 價格交期有優(yōu)勢 歡迎詢價
詢價
3654
全新原裝 貨期兩周
詢價
2022+
3650
全新原裝 貨期兩周
詢價
亞奇
2019+
Connector
10000
就找我吧!--邀您體驗愉快問購元件!
詢價
更多OK3055供應(yīng)商 更新時間2025-4-17 8:00:00