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RFD3055SM中文資料仙童半導(dǎo)體數(shù)據(jù)手冊PDF規(guī)格書

RFD3055SM
廠商型號

RFD3055SM

功能描述

12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs

文件大小

418.34 Kbytes

頁面數(shù)量

8

生產(chǎn)廠商 Fairchild Semiconductor
企業(yè)簡稱

Fairchild仙童半導(dǎo)體

中文名稱

飛兆/仙童半導(dǎo)體公司官網(wǎng)

原廠標識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2024-12-25 22:50:00

RFD3055SM規(guī)格書詳情

These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a

specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching

convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA49082.

Features

? 12A, 60V

? rDS(ON)= 0.150?

? Temperature Compensating PSPICE?Model

? Peak Current vs Pulse Width Curve

? UIS Rating Curve

? 175°C Operating Temperature

? Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

產(chǎn)品屬性

  • 型號:

    RFD3055SM

  • 功能描述:

    MOSFET Power MOSFET N-Ch 6V/12a/.15 Ohm

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

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TI
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23+
NA/
3588
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FAIRCHILD
20+
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36900
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FAIRCHILD
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FAIRCHILD/仙童
2022+
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48000
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onsemi(安森美)
23+
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7350
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FAIRCHILD
23+
NA
19960
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FAIRCHILD
22+
TO-252
3255
全新原裝正品 現(xiàn)貨 假一罰十
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INTERSIL
0022+
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3914
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