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RFD3055SM中文資料HARRIS數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

RFD3055SM
廠商型號(hào)

RFD3055SM

功能描述

12A, 60V, Avalanche Rated, N-Channel Enhancement-Mode Power MOSFETs (MegaFETs)

文件大小

118.15 Kbytes

頁(yè)面數(shù)量

8 頁(yè)

生產(chǎn)廠商 Harris Corporation
企業(yè)簡(jiǎn)稱

HARRIS

中文名稱

Harris Corporation

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二

更新時(shí)間

2025-1-13 12:11:00

RFD3055SM規(guī)格書(shū)詳情

Description

The RFD3055, RFD3055SM and RFP3055 N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, relay drivers and emitter switches for bipolar transistors. These transistors can be operated directly from integrated circuits.

Features

? 12A, 60V

? rDS(ON) = 0.150?

? Temperature Compensating PSPICE Model

? Peak Current vs Pulse Width Curve

? UIS Rating Curve

? +175°C Operating Temperature

產(chǎn)品屬性

  • 型號(hào):

    RFD3055SM

  • 功能描述:

    MOSFET Power MOSFET N-Ch 6V/12a/.15 Ohm

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

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