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首頁(yè) >RFD3055SM>規(guī)格書(shū)列表

零件編號(hào)	下載&訂購(gòu)	功能描述	制造商&上傳企業(yè)	LOGO
RFD3055SM	文件：82.17 Kbytes Page：8 Pages	12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchas	Intersil Intersil Corporation	Intersil
RFD3055SM	文件：418.34 Kbytes Page：8 Pages	12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstanda specifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuch	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
RFD3055SM	文件：118.15 Kbytes Page：8 Pages	12A, 60V, Avalanche Rated, N-Channel Enhancement-Mode Power MOSFETs (MegaFETs) Description TheRFD3055,RFD3055SMandRFP3055N-ChannelpowerMOSFETsaremanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedfor	HARRIS Harris Corporation	HARRIS
RFD3055SM9A	文件：424.04 Kbytes Page：8 Pages	12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstanda specifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuch	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
RFD3055SM9A	文件：780.06 Kbytes Page：5 Pages	N-channel Enhancement Mode Power MOSFET Features ?VDS=60V,ID=50A RDS(ON)	BychipBYCHIP ELECTRONICS CO., LIMITED 百域芯深圳市百域芯科技有限公司	Bychip
RFP3055	文件：82.17 Kbytes Page：8 Pages	12A,60V,0.150Ohm,N-ChannelPowerMOSFETs TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchas	Intersil Intersil Corporation	Intersil
RFP3055	文件：418.34 Kbytes Page：8 Pages	12A,60V,0.150Ohm,N-ChannelPowerMOSFETs TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstanda specifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuch	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
RFP3055	文件：118.15 Kbytes Page：8 Pages	12A,60V,AvalancheRated,N-ChannelEnhancement-ModePowerMOSFETs(MegaFETs) Description TheRFD3055,RFD3055SMandRFP3055N-ChannelpowerMOSFETsaremanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedfor	HARRIS Harris Corporation	HARRIS
RFP3055LE	文件：416.36 Kbytes Page：8 Pages	11A,60V,0.107Ohm,LogicLevel,N-ChannelPowerMOSFETs TheseN-Channelenhancement-modepowerMOSFETsaremanufacturedusingthelatestmanufacturingprocesstechnology.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapp	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
RFP3055LE	文件：86.26 Kbytes Page：8 Pages	11A,60V,0.107Ohm,LogicLevel,N-ChannelPowerMOSFETs TheseN-Channelenhancement-modepowerMOSFETsaremanufacturedusingthelatestmanufacturingprocesstechnology.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapp	Intersil Intersil Corporation	Intersil
RFP3055LE	文件：1.08947 Mbytes Page：8 Pages	N-Channel60V(D-S)MOSFET	VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司	VBSEMI
RFT3055	文件：96.11 Kbytes Page：10 Pages	2.0A,60V,0.150Ohm,N-Channel,LogicLevel,ESDRated,PowerMOSFET ThisproductisanN-ChannelpowerMOSFETmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Itwasdesignedforuseinapplicationssuchasswitchingregulato	Intersil Intersil Corporation	Intersil
RFT3055LE	文件：96.11 Kbytes Page：10 Pages	2.0A,60V,0.150Ohm,N-Channel,LogicLevel,ESDRated,PowerMOSFET ThisproductisanN-ChannelpowerMOSFETmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Itwasdesignedforuseinapplicationssuchasswitchingregulato	Intersil Intersil Corporation	Intersil
RJP3055DPP	文件：136.18 Kbytes Page：2 Pages	PowerMOSFETsandIGBTforPDP	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
RK3055	文件：135.22 Kbytes Page：4 Pages	Smallswitching(60V,8A) Features 1)Lowon-resistance. 2)Fastswitchingspeed. 3)WideSOA(safeoperatingarea). 4)Low-voltagedrive. 5)Easilydesigneddrivecircuits. 6)Easytouseinparallel. Structure SiliconN-channelMOSFET	ROHMRohm 羅姆羅姆半導(dǎo)體集團(tuán)	ROHM
RK3055E	文件：135.22 Kbytes Page：4 Pages	Smallswitching(60V,8A) Features 1)Lowon-resistance. 2)Fastswitchingspeed. 3)WideSOA(safeoperatingarea). 4)Low-voltagedrive. 5)Easilydesigneddrivecircuits. 6)Easytouseinparallel. Structure SiliconN-channelMOSFET	ROHMRohm 羅姆羅姆半導(dǎo)體集團(tuán)	ROHM
RK3055E	文件：95.79 Kbytes Page：5 Pages	10VDriveNchMOSFET	ROHMRohm 羅姆羅姆半導(dǎo)體集團(tuán)	ROHM
S3055	文件：521.059 Kbytes Page：13 Pages	5CHBTLMotorDriveIC	KODENSHIKODENSHI_AUK CORP. 可天士可天士光電子集團(tuán)	KODENSHI
SFD3055	文件：971.92 Kbytes Page：7 Pages	LogicN-ChannelMOSFET	ETC1List of Unclassifed Manufacturers etc未分類制造商未分類制造商	ETC1
SFD3055	文件：1.01573 Mbytes Page：8 Pages	N-Channel30-V(D-S)MOSFET	VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司	VBSEMI

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詳細(xì)參數(shù)

型號(hào)：
RFD3055SM
功能描述：
MOSFET Power MOSFET N-Ch 6V/12a/.15 Ohm
RoHS：
否
制造商：
STMicroelectronics
晶體管極性：
N-Channel
汲極/源極擊穿電壓：
650 V
閘/源擊穿電壓：
25 V
漏極連續(xù)電流：
130 A 電阻汲極/源極
RDS（導(dǎo)通）：
0.014 Ohms
配置：
Single
安裝風(fēng)格：
Through Hole
封裝/箱體：
Max247
封裝：
Tube

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
深圳市亞泰盈科電子有限公司	RFD3055SM	FAIRCHILD		SOT252	30216	提供BOM表配單TEL:0755-83759919QQ:2355705587杜S	詢價(jià)
深圳市坤融電子科技有限公司	RFD3055SM	FAIRCHILD/仙童	24+	TO-252	2685	只做原廠渠道可追溯貨源	詢價(jià)
深圳市一線半導(dǎo)體有限公司	RFD3055SM	FAIRCHILD	24+	TO-252	36800		詢價(jià)
深圳市星佑電子有限公司	RFD3055SM	仙童	05+	TO-252	12000	原裝進(jìn)口	詢價(jià)
深圳市昌和盛利電子有限公司	RFD3055SM	FAIRCHILD	23+	TO-252	9526		詢價(jià)
深圳市恒創(chuàng)達(dá)實(shí)業(yè)有限公司	RFD3055SM	INT/FSC	17+	TO-252	6200		詢價(jià)
深圳市博浩通科技有限公司	RFD3055SM	infineon	23+	原廠原裝	6000	全新原裝	詢價(jià)
深圳市永貝爾科技有限公司	RFD3055SM	FAIRCHILD	23+	NA	19960	只做進(jìn)口原裝,終端工廠免費(fèi)送樣	詢價(jià)
上海專毅電子科技有限公司	RFD3055SM	FAIRCHILD	17+	SOT-252	9888	只做原裝,現(xiàn)貨庫(kù)存	詢價(jià)
上海意淼電子科技有限公司	RFD3055SM	TI	23+	DIP	80000	全新原裝假一賠十	詢價(jià)

更多RFD3055SM供應(yīng)商更新時(shí)間2024-12-25 14:00:00

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