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NP36P04KDG

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION TheNP36P04KDGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance RDS(on)1=17.0mΩMAX.(VGS=?10V,ID=?18A) RDS(on)2=23.5mΩMAX.(VGS=?4.5V,ID=?18A) ?Lowinputcapacitance

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NP36P04KDG

isc P-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=-36A@TC=25℃ ·DrainSourceVoltage-VDSS=-40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=17mΩ(Max)@VGS=-10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NP36P04KDG

Product Scout Automotive

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP36P04KDG-E1-AY

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION TheNP36P04KDGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance RDS(on)1=17.0mΩMAX.(VGS=?10V,ID=?18A) RDS(on)2=23.5mΩMAX.(VGS=?4.5V,ID=?18A) ?Lowinputcapacitance

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NP36P04KDG-E2-AY

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION TheNP36P04KDGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance RDS(on)1=17.0mΩMAX.(VGS=?10V,ID=?18A) RDS(on)2=23.5mΩMAX.(VGS=?4.5V,ID=?18A) ?Lowinputcapacitance

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NP36P04KDG_15

SWITCHING P-CHANNEL POWER MOSFET

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP36P04KDG-E1-AYNote

SWITCHING P-CHANNEL POWER MOSFET

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP36P04KDG-E2-AYNote

SWITCHING P-CHANNEL POWER MOSFET

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP36P04SDG

iscP-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=-36A@TC=25℃ ·DrainSourceVoltage-VDSS=-40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=17mΩ(Max)@VGS=-10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NP36P04SDG

ProductScoutAutomotive

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

詳細(xì)參數(shù)

  • 型號：

    NP36P04KDG

  • 制造商：

    NEC

  • 制造商全稱：

    NEC

  • 功能描述：

    MOS FIELD EFFECT TRANSISTOR

供應(yīng)商型號品牌批號封裝庫存備注價格
NEC
24+
TO-252
8866
詢價
NEC
23+
TO-252
11713
全新原裝
 詢價
rene
19+
TO-252
87436
原廠代理渠道,每一顆芯片都可追溯原廠；
 詢價
Renesas
1822+
TO-263
9852
只做原裝正品假一賠十為客戶做到零風(fēng)險!!
 詢價
NEC
6000
面議
19
TO-252
 詢價
Renesas
18+
TO-263
41200
原裝正品,現(xiàn)貨特價
 詢價
NEC
23+
TO-252
10000
公司只做原裝正品
 詢價
RENESAS/瑞薩
23+
TO-263
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
rene
21+
TO-252
10000
原裝現(xiàn)貨假一罰十
 詢價
RENESAS/瑞薩
2022
TO-263
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
 詢價
更多NP36P04KDG供應(yīng)商 更新時間2025-1-4 13:30:00

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