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NP36P06KDG

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION TheNP36P06KDGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance RDS(on)1=29.5mΩMAX.(VGS=?10V,ID=?18A) RDS(on)2=37.5mΩMAX.(VGS=?4.5V,ID=?18A) ?Lowinputcapacitance

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NP36P06KDG

-60V – -36A – P-channel Power MOS FET Application : Automotive

Description ThisproductisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance:RDS(on)=29.5m?Max.(VGS=-10V,ID=-18A) RDS(on)=37.5m?Max.(VGS=-4.5V,ID=-18A) ?Lowinputcapacitance:Ciss

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP36P06KDG

isc P-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=-36A@TC=25℃ ·DrainSourceVoltage-VDSS=-60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=30mΩ(Max)@VGS=-10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

NP36P06KDG-E1-AY

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION TheNP36P06KDGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance RDS(on)1=29.5mΩMAX.(VGS=?10V,ID=?18A) RDS(on)2=37.5mΩMAX.(VGS=?4.5V,ID=?18A) ?Lowinputcapacitance

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NP36P06KDG-E2-AY

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION TheNP36P06KDGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance RDS(on)1=29.5mΩMAX.(VGS=?10V,ID=?18A) RDS(on)2=37.5mΩMAX.(VGS=?4.5V,ID=?18A) ?Lowinputcapacitance

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NP36P06KDG_15

SWITCHING P-CHANNEL POWER MOS FET

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP36P06KDG-E1-AYNote

SWITCHING P-CHANNEL POWER MOS FET

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP36P06KDG-E2-AYNote

SWITCHING P-CHANNEL POWER MOS FET

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP36P06SLG

iscP-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=-36A@TC=25℃ ·DrainSourceVoltage-VDSS=-60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=30mΩ(Max)@VGS=-10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

NP36P06SLG

-60V–-36A–P-channelPowerMOSFETApplication:Automotive

Description ThisproductisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance:RDS(on)=30m?Max.(VGS=-10V,ID=-18A) RDS(on)=40m?Max.(VGS=-4.5V,ID=-18A) ?Lowinputcapacitance:Ciss=32

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

詳細參數

  • 型號：

    NP36P06KDG

  • 制造商：

    NEC

  • 制造商全稱：

    NEC

  • 功能描述：

    MOS FIELD EFFECT TRANSISTOR

供應商型號品牌批號封裝庫存備注價格
NEC
24+
TO-263
503166
免費送樣原盒原包現貨一手渠道聯系
 詢價
NEC
24+
TO-252
8866
詢價
NEC
23+
TO-252
11714
全新原裝
 詢價
Renesas
1822+
TO-263
9852
只做原裝正品假一賠十為客戶做到零風險!!
 詢價
NEC
6000
面議
19
TO-252
 詢價
Renesas
18+
TO-263
41200
原裝正品,現貨特價
 詢價
RENESAS/瑞薩
23+
TO-263
50000
全新原裝正品現貨,支持訂貨
 詢價
RENESAS/瑞薩
21+
TO-263
10000
原裝現貨假一罰十
 詢價
RENESAS/瑞薩
2022+
TO-263
800
原廠代理 終端免費提供樣品
 詢價
NEC
23+
TO-263
6000
原裝正品，支持實單
 詢價
更多NP36P06KDG供應商 更新時間2025-3-29 10:12:00

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