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MJE2955TG

ComplementarySiliconPlasticPowerTransistors

10AMPERECOMPLEMENTARYSILICONPOWERTRANSISTORS60VOLTS?75WATTS MJE2955T(PNP) MJE3055T(NPN) Thesedevicesaredesignedforuseingeneral?purposeamplifierandswitchingapplications. Features ?DCCurrentGainSpecifiedto10A ?HighCurrentGain?BandwidthProduct?fT=2.0MHz(Min

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJE2955TPNP

PLASTICPOWERTRANSISTORS

PLASTICPOWERTRANSISTORS WithexcellentSafeOperatingArea,idealforHi-FiAmplifierandSwitchingRegulatorApplications

CDIL

Continental Device India Limited

MJF2955

COMPLEMENTARYSILICONPOWERTRANSISTORS

MJF3055(NPN) MJF2955(PNP) COMPLEMENTARYSILICONPOWERTRANSISTORS10AMPERES90VOLTS,30WATTS Specificallydesignedforgeneralpurposeamplifierandswitchingapplications. Features ?IsolatedOvermoldPackage(1500VoltsRMSMin) ?ElectricallySimilartothePopular

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJF2955

COMPLEMENTARYSILICONPOWERTRANSISTORS10AMPERES90VOLTS30WATTS

ComplementarySiliconPowerTransistors ...specificallydesignedforgeneralpurposeamplifierandswitchingapplications. ?IsolatedOvermoldPackage(1500VoltsRMSMin) ?ElectricallySimilartothePopularMJE3055TandMJE2955T ?Collector–EmitterSustainingVoltage—VCEO(sus)90Volts

Motorola

Motorola, Inc

MJF2955

ComplementarySiliconPowerTransistors

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJF2955G

ComplementarySiliconPowerTransistors

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MMFT2955E

TMOSMEDIUMPOWERFET1.2AMP60VOLTS

Motorola

Motorola, Inc

MMFT2955E

PowerMOSFET

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MSU2955

8-BitMicro-controller

8-BitMicro-controllerwith16KBflashembedded

MOSELMOSEL VETELIC INC.

茂矽臺灣茂矽電子股份有限公司

MTD2955E

TMOSPOWERFET12AMPERES60VOLTSRDS(on)=0.3OHM

TMOSE-FET?PowerFieldEffectTransistorDPAKforSurfaceMountP–ChannelEnhancement–ModeSiliconGate ThisadvancedTMOSE–FETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thenewenergyefficientdesignalsooffersadrain–to–sourcediodewithafastrecovery

Motorola

Motorola, Inc

MTD2955E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=12A@TC=25℃ ·DrainSourceVoltage- :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.3Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MTD2955E

PowerFieldEffect

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MTD2955V

TMOSPOWERFET12AMPERES60VOLTSRDS(on)=0.230OHM

TMOSV?PowerFieldEffectTransistorDPAKForSurfaceMountP–ChannelEnhancement–ModeSiliconGate TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50and6

Motorola

Motorola, Inc

MTD2955V

P-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription ThisP-ChannelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers. TheseMOSFETsfeaturefasterswitchingandlowergatechargethanotherMOSFETswithcomparableRDS(O

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

MTD2955V

PowerMOSFET12A,60VP-ChannelDPAK

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MTD2955V

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=12A@TC=25℃ ·DrainSourceVoltage- :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.23Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MTD2955VG

PowerMOSFET12A,60VP-ChannelDPAK

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MTD2955VG

N-Channel60V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

MTP2955

TMOSPOWERFET12AMPERES60VOLTSRDS(on)=0.230OHM

TMOSV?PowerFieldEffectTransistor P–ChannelEnhancement–ModeSiliconGate TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50and60voltTMOSdevi

Motorola

Motorola, Inc

MTP2955D

TMOSPOWERFET12AMPERES60VOLTSRDS(on)=0.230OHM

TMOSV?PowerFieldEffectTransistor P–ChannelEnhancement–ModeSiliconGate TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50and60voltTMOSdevi

Motorola

Motorola, Inc

供應(yīng)商型號品牌批號封裝庫存備注價格
ST
23+
原廠原封
16900
正規(guī)渠道,只有原裝!
 詢價
ST
原廠原封
36900
集團化配單-有更多數(shù)量-免費送樣-原包裝正品現(xiàn)貨-正規(guī)
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ST
22+
原廠原封
16900
支持樣品 原裝現(xiàn)貨 提供技術(shù)支持!
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FAIRCHIL
22+23+
TO-220
18075
絕對原裝正品全新進口深圳現(xiàn)貨
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FAIRCHILD/仙童
24+
TO-220
20000
原裝現(xiàn)貨
 詢價
FAIRCHILD/仙童
23+
TO-220
3000
原裝正品假一罰百!可開增票!
 詢價
FAIRCHILD/仙童
22+
TO-220
20000
原裝正品
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ST
22+
TO220
8700
原裝現(xiàn)貨
 詢價
ST
19+
TO220
12560
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
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FAIRCHILD/仙童
22+
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30000
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更多MJE2955T(CHINA)供應(yīng)商 更新時間2024-11-17 11:00:00

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