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MJF2955G

Complementary Silicon Power Transistors

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJF2955G

包裝：管件 封裝/外殼：TO-220-3 整包 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極性晶體管（BJT）- 單個 描述：TRANS PNP 90V 10A TO220FP

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MMFT2955E

TMOSMEDIUMPOWERFET1.2AMP60VOLTS

Motorola

Motorola, Inc

MMFT2955E

PowerMOSFET

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MSU2955

8-BitMicro-controller

8-BitMicro-controllerwith16KBflashembedded

MOSELMOSEL VETELIC INC.

茂矽臺灣茂矽電子股份有限公司

MTD2955E

TMOSPOWERFET12AMPERES60VOLTSRDS(on)=0.3OHM

TMOSE-FET?PowerFieldEffectTransistorDPAKforSurfaceMountP–ChannelEnhancement–ModeSiliconGate ThisadvancedTMOSE–FETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thenewenergyefficientdesignalsooffersadrain–to–sourcediodewithafastrecovery

Motorola

Motorola, Inc

MTD2955E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=12A@TC=25℃ ·DrainSourceVoltage- :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.3Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MTD2955E

PowerFieldEffect

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MTD2955V

TMOSPOWERFET12AMPERES60VOLTSRDS(on)=0.230OHM

TMOSV?PowerFieldEffectTransistorDPAKForSurfaceMountP–ChannelEnhancement–ModeSiliconGate TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50and6

Motorola

Motorola, Inc

MTD2955V

P-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription ThisP-ChannelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers. TheseMOSFETsfeaturefasterswitchingandlowergatechargethanotherMOSFETswithcomparableRDS(O

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

MTD2955V

PowerMOSFET12A,60VP-ChannelDPAK

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MTD2955V

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=12A@TC=25℃ ·DrainSourceVoltage- :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.23Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MTD2955VG

PowerMOSFET12A,60VP-ChannelDPAK

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MTD2955VG

N-Channel60V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

MTP2955

TMOSPOWERFET12AMPERES60VOLTSRDS(on)=0.230OHM

TMOSV?PowerFieldEffectTransistor P–ChannelEnhancement–ModeSiliconGate TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50and60voltTMOSdevi

Motorola

Motorola, Inc

MTP2955D

TMOSPOWERFET12AMPERES60VOLTSRDS(on)=0.230OHM

TMOSV?PowerFieldEffectTransistor P–ChannelEnhancement–ModeSiliconGate TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50and60voltTMOSdevi

Motorola

Motorola, Inc

MTP2955E

TMOSPOWERFET12AMPERES60VOLTSRDS(on)=0.3OHM

TMOSPOWERFET12AMPERES60VOLTSRDS(on)=0.3OHM P–ChannelEnhancement–ModeSiliconGate ThisadvancedTMOSE–FETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thenewenergyefficientdesignalsooffersadrain–to–sourcediodewithafastrecoveryt

Motorola

Motorola, Inc

MTP2955E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=12A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.3Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MTP2955V

TMOSPOWERFET12AMPERES60VOLTSRDS(on)=0.230OHM

TMOSV?PowerFieldEffectTransistor P–ChannelEnhancement–ModeSiliconGate TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50and60voltTMOSdevi

Motorola

Motorola, Inc

MTP2955V

P-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription ThisP-ChannelMOSFEThasbeendesignedspecificallyforlowvoltage,highspeedswitchingapplicationsi.e.powersuppliesandpowermotorcontrols. TheseMOSFETsfeaturefasterswitchingandlowergatechargethanotherMOSFETswithcomparableRDS(ON)specifications.

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

產(chǎn)品屬性

  • 產(chǎn)品編號：

    MJF2955G

  • 制造商：

    onsemi

  • 類別：

    分立半導(dǎo)體產(chǎn)品 > 晶體管 - 雙極性晶體管（BJT）- 單個

  • 包裝：

    管件

  • 晶體管類型：

    PNP

  • 不同?Ib、Ic 時?Vce 飽和壓降（最大值）：

    2.5V @ 3.3A，10A

  • 電流 - 集電極截止（最大值）：

    1μA

  • 不同?Ic、Vce?時 DC 電流增益 (hFE)（最小值）：

    20 @ 4A，4V

  • 頻率 - 躍遷：

    2MHz

  • 工作溫度：

    -55°C ~ 150°C（TJ）

  • 安裝類型：

    通孔

  • 封裝/外殼：

    TO-220-3 整包

  • 供應(yīng)商器件封裝：

    TO-220FP

  • 描述：

    TRANS PNP 90V 10A TO220FP

供應(yīng)商型號品牌批號封裝庫存備注價格
onsemi(安森美)
23+
TO-220F
942
原廠訂貨渠道,支持BOM配單一站式服務(wù)
 詢價
onsemi
24+
TO-220-3 整包
30000
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品
 詢價
ON
24+
TO-2203LEADFULLPA
8866
詢價
ON
1728+
?
7500
只做原裝進(jìn)口,假一罰十
 詢價
ON
23+
TO-220-3
11846
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
 詢價
ONS
2018+
26976
代理原裝現(xiàn)貨/特價熱賣!
 詢價
三年內(nèi)
1983
納立只做原裝正品13590203865
 詢價
ON Semiconductor
2010+
N/A
358
加我qq或微信，了解更多詳細(xì)信息,體驗一站式購物
 詢價
ON
1809+
TO-220
3675
就找我吧!--邀您體驗愉快問購元件!
 詢價
ON/安森美
22+
ORIGINAL
25800
原裝正品,品質(zhì)保證,值得你信賴.
 詢價
更多MJF2955G供應(yīng)商 更新時間2024-10-25 9:46:00

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