| 零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
MTD2955VG | Power MOSFET 12A, 60V P-Channel DPAK | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | |
MTD2955VG | N-Channel 60 V (D-S) MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司 | VBSEMI | |
TMOSPOWERFET12AMPERES60VOLTSRDS(on)=0.230OHM TMOSV?PowerFieldEffectTransistor P–ChannelEnhancement–ModeSiliconGate TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50and60voltTMOSdevi | Motorola Motorola, Inc | Motorola | ||
TMOSPOWERFET12AMPERES60VOLTSRDS(on)=0.230OHM TMOSV?PowerFieldEffectTransistor P–ChannelEnhancement–ModeSiliconGate TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50and60voltTMOSdevi | Motorola Motorola, Inc | Motorola | ||
TMOSPOWERFET12AMPERES60VOLTSRDS(on)=0.3OHM TMOSPOWERFET12AMPERES60VOLTSRDS(on)=0.3OHM P–ChannelEnhancement–ModeSiliconGate ThisadvancedTMOSE–FETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thenewenergyefficientdesignalsooffersadrain–to–sourcediodewithafastrecoveryt | Motorola Motorola, Inc | Motorola | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=12A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.3Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
TMOSPOWERFET12AMPERES60VOLTSRDS(on)=0.230OHM TMOSV?PowerFieldEffectTransistor P–ChannelEnhancement–ModeSiliconGate TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50and60voltTMOSdevi | Motorola Motorola, Inc | Motorola | ||
P-ChannelEnhancementModeFieldEffectTransistor GeneralDescription ThisP-ChannelMOSFEThasbeendesignedspecificallyforlowvoltage,highspeedswitchingapplicationsi.e.powersuppliesandpowermotorcontrols. TheseMOSFETsfeaturefasterswitchingandlowergatechargethanotherMOSFETswithcomparableRDS(ON)specifications. | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
P-Channel60-V(D-S)MOSFET FEATURES ?TrenchFET?PowerMOSFET ?100UISTested APPLICATIONS ?LoadSwitch | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司 | VBSEMI | ||
PowerMOSFET | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=12A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.23Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
PowerMOSFET | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
SILICONPLANAREPITAXIALTRANSISTORS SILICONPLANAREPITAXIALTRANSISTORS WithexcellentSafeOperatingArea,idealforHi-FiAmplifierandSwitchingRegulatorApplications | CDIL Continental Device India Limited | CDIL | ||
P-ChannelEnhancementModeFieldEffectTransistor | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
P-ChannelEnhancementModeFieldEffectTransistor GeneralDescription This60VP-ChannelMOSFETisproducedusingFairchildSemiconductor’shighvoltageTrenchprocess. Ithasbeenoptimizedforpowermanagementplications. Applications ?DC/DCconverter ?Powermanagement | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
P-Channel60-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司 | VBSEMI | ||
P-ChannelMOSFET | KEXINGuangdong Kexin Industrial Co.,Ltd 科信電子廣東科信實業(yè)有限公司 | KEXIN | ||
P-CHannelEnhancementModeMOSFET | TECHPUBLICTECH PUBLIC Electronics co LTD 臺舟電子臺舟電子股份有限公司 | TECHPUBLIC | ||
P-Channel60-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司 | VBSEMI | ||
PowerMOSFET | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI |
詳細參數(shù)
- 型號：
MTD2955VG
- 制造商：
ONSEMI
- 制造商全稱：
ON Semiconductor
- 功能描述：
Power MOSFET 12A, 60V P-Channel DPAK
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
ON |
24+ |
30000 |
詢價 | ||||
ON |
24+ |
TO-252 |
90000 |
一級代理商進口原裝現(xiàn)貨、假一罰十價格合理 |
詢價 | ||
ON |
1709+ |
TO-252/D- |
32500 |
普通 |
詢價 | ||
ON/安森美 |
21+ |
TO-252 |
30000 |
只做正品原裝現(xiàn)貨 |
詢價 | ||
O |
21+ |
TO-252D |
10001 |
詢價 | |||
O |
23+ |
TO-252D |
10000 |
公司只做原裝正品 |
詢價 | ||
ON |
22+ |
TO-252 |
3000 |
原裝正品,支持實單 |
詢價 | ||
VBsemi |
21+ |
TO252 |
10065 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 | ||
VBsemi |
2215+ |
TO252 |
3362 |
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品 |
詢價 | ||
VBsemi |
24+ |
TO252 |
3362 |
詢價 |
相關(guān)規(guī)格書
更多- MTD2955VT4
- MTD2N20
- MTD2N40ET4
- MTD2N50E
- MTD3010N
- MTD3010PM
- MTD3010PM_2
- MTD3010PN
- MTD3055E1
- MTD3055ELT4
- MTD3055V1
- MTD3055VL1
- MTD3055VL104-1
- MTD3055VT4G
- MTD3302T4
- MTD392N
- MTD393
- MTD393V
- MTD394N
- MTD3N25E1
- MTD492
- MTD49X
- MTD4N20E1
- MTD4P05
- MTD5010M
- MTD5010N-DIG
- MTD5010W-DIG
- MTD502EF
- MTD505
- MTD5052N-DIG
- MTD5052W-DIG
- MTD56
- MTD5N05-1
- MTD5N06-1
- MTD5N25E1
- MTD5P06E
- MTD5P06V_03
- MTD5P06VT4
- MTD5P06VT4GV
- MTD6000PTT
- MTD6000PT-T-DIG
- MTD6040
- MTD6100
- MTD6100PT-DIG
- MTD6160
相關(guān)庫存
更多- MTD2955VT4G
- MTD2N40E
- MTD2N50
- MTD2N50E1
- MTD3010N-DIG
- MTD3010PM_11
- MTD3010PM-DIG
- MTD3055E
- MTD3055EL
- MTD3055V
- MTD3055VL
- MTD3055VL1041
- MTD3055VLT4
- MTD3302
- MTD392
- MTD392V
- MTD393N
- MTD394
- MTD3N25E
- MTD48
- MTD492V
- MTD4N20E
- MTD4N20ET4
- MTD4P06
- MTD5010N
- MTD5010W
- MTD502E
- MTD502EG
- MTD5052N
- MTD5052W
- MTD516
- MTD5N05
- MTD5N06
- MTD5N25E
- MTD5N25ET4
- MTD5P06V
- MTD5P06V1
- MTD5P06VT4G
- MTD6000PT
- MTD6000PT-T
- MTD6010A
- MTD6060
- MTD6100PT
- MTD6140
- MTD6170
