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MJD45H11T4G

Complementary Power Transistors

ComplementaryPowerTransistors DPAKForSurfaceMountApplications Designedforgeneralpurposepowerandswitchingsuchasoutputordriverstagesinapplicationssuchasswitchingregulators,converters,andpoweramplifiers. Features ?LeadFormedforSurfaceMountApplicationin

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJD45H11T4G

Complementary Power Transistors

Designedforgeneralpurposepowerandswitchingsuchasoutputor driverstagesinapplicationssuchasswitchingregulators,converters, andpoweramplifiers. Features ?LeadFormedforSurfaceMountApplicationinPlasticSleeves (NoSuffix) ?StraightLeadVersioninPlasticSleeves(“

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJD45H11T4G

SILICON POWER TRANSISTORS

Designedforgeneralpurposepowerandswitchingsuchasoutputordriverstagesinapplicationssuchasswitchingregulators,converters,andpoweramplifiers. Features ?Pb?FreePackagesareAvailable ?LeadFormedforSurfaceMountApplicationinPlasticSleeves (NoSuffix) ?Stra

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJD45H11T4G

Complementary Power Transistors

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJD45H11T4G

包裝:卷帶(TR)剪切帶(CT)Digi-Reel? 得捷定制卷帶 封裝/外殼:TO-252-3,DPak(2 引線 + 接片),SC-63 類別:分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極性晶體管(BJT)- 單個(gè) 描述:TRANS PNP 80V 8A DPAK

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJB45H11T4

ComplementaryPowerTransistorsD2PAKforSurfaceMount

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJB45H11T4

ComplementaryPowerTransistors

ComplementaryPowerTransistors D2PAKforSurfaceMount Complementarypowertransistorsareforgeneralpurposepoweramplificationandswitchingsuchasoutputordriverstagesinapplicationssuchasswitchingregulators,convertersandpoweramplifiers. Features ?LowCollector?EmitterSatu

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJB45H11T4G

ComplementaryPowerTransistorsD2PAKforSurfaceMount

Complementarypowertransistorsareforgeneralpurposepower amplificationandswitchingsuchasoutputordriverstagesin applicationssuchasswitchingregulators,convertersandpower amplifiers. Features ?LowCollector?EmitterSaturationVoltage? VCE(sat)=1.0V(Max)@8.0A ?F

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJB45H11T4G

ComplementaryPowerTransistors

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJB45H11T4G

ComplementaryPowerTransistorsD2PAKforSurfaceMount

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJD45H11T4

Complementarypowertransistors

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

MJD45H11T4

ComplementaryPowerTransistors

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJD45H11T4

SILICONPOWERTRANSISTORS

Designedforgeneralpurposepowerandswitchingsuchasoutputordriverstagesinapplicationssuchasswitchingregulators,converters,andpoweramplifiers. Features ?Pb?FreePackagesareAvailable ?LeadFormedforSurfaceMountApplicationinPlasticSleeves (NoSuffix) ?Stra

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJD45H11T4

SILICONPOWERTRANSISTORS8AMPERES80VOLTS20WATTS

ComplementaryPowerTransistors DPAKForSurfaceMountApplications ...forgeneralpurposepowerandswitchingsuchasoutputordriverstagesinapplicationssuchasswitchingregulators,converters,andpoweramplifiers. ?LeadFormedforSurfaceMountApplicationinPlasticS

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MJD45H11T4-A

Complementarypowertransistors

MJD44H11T4-AMJD44H11-->NPN MJD45H11T4-AMJD45H11-->PNP Description Thedevicesaremanufacturedinlowvoltagemultiepitaxialplanartechnology.Theyareintendedforgeneralpurposelinearandswitchingapplications. Features ■Thedevicesarequalifiedforautomotiveapp

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

NJVMJB45H11T4G

ComplementaryPowerTransistors

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NJVMJB45H11T4G

ComplementaryPowerTransistorsD2PAKforSurfaceMount

Complementarypowertransistorsareforgeneralpurposepower amplificationandswitchingsuchasoutputordriverstagesin applicationssuchasswitchingregulators,convertersandpower amplifiers. Features ?LowCollector?EmitterSaturationVoltage? VCE(sat)=1.0V(Max)@8.0A ?F

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NJVMJD45H11T4G

ComplementaryPowerTransistors

Designedforgeneralpurposepowerandswitchingsuchasoutputor driverstagesinapplicationssuchasswitchingregulators,converters, andpoweramplifiers. Features ?LeadFormedforSurfaceMountApplicationinPlasticSleeves (NoSuffix) ?StraightLeadVersioninPlasticSleeves(“

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NJVMJD45H11T4G

ComplementaryPowerTransistors

ComplementaryPowerTransistors DPAKForSurfaceMountApplications Designedforgeneralpurposepowerandswitchingsuchasoutputordriverstagesinapplicationssuchasswitchingregulators,converters,andpoweramplifiers. Features ?LeadFormedforSurfaceMountApplicationin

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

產(chǎn)品屬性

  • 產(chǎn)品編號(hào):

    MJD45H11T4G

  • 制造商:

    onsemi

  • 類別:

    分立半導(dǎo)體產(chǎn)品 > 晶體管 - 雙極性晶體管(BJT)- 單個(gè)

  • 包裝:

    卷帶(TR)剪切帶(CT)Digi-Reel? 得捷定制卷帶

  • 晶體管類型:

    PNP

  • 不同?Ib、Ic 時(shí)?Vce 飽和壓降(最大值):

    1V @ 400mA,8A

  • 電流 - 集電極截止(最大值):

    1μA

  • 不同?Ic、Vce?時(shí) DC 電流增益 (hFE)(最小值):

    40 @ 4A,1V

  • 頻率 - 躍遷:

    90MHz

  • 工作溫度:

    -55°C ~ 150°C(TJ)

  • 安裝類型:

    表面貼裝型

  • 封裝/外殼:

    TO-252-3,DPak(2 引線 + 接片),SC-63

  • 供應(yīng)商器件封裝:

    DPAK

  • 描述:

    TRANS PNP 80V 8A DPAK

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
ON
21+
SOT252
3000
只做原裝正品!現(xiàn)貨庫(kù)存!可開(kāi)13點(diǎn)增值稅票
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ON/安森美
22+
TO252
50000
原裝正品
詢價(jià)
23+
TO-252
18000
專注原裝正品現(xiàn)貨特價(jià)中量大可定
詢價(jià)
ON
16+
TO-252
9000
MD原裝正品現(xiàn)貨庫(kù)存
詢價(jià)
ON
23+
TO-252
12560
受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣(mài)!
詢價(jià)
ON
SOT252
30216
提供BOM表配單TEL:0755-83759919QQ:2355705587杜S
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ON
16+/17+
DPAK
78000
渠道現(xiàn)貨庫(kù)存-原裝正品
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ON
23+
TO-252
113400
詢價(jià)
ON
18+
TO-252
66500
全新原裝現(xiàn)貨/假一罰百!
詢價(jià)
ON/安森美
2019+
TO252
3333
原廠渠道 可含稅出貨
詢價(jià)
更多MJD45H11T4G供應(yīng)商 更新時(shí)間2024-12-23 16:10:00