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MJB45H11T4

Complementary Power Transistors

ComplementaryPowerTransistors D2PAKforSurfaceMount Complementarypowertransistorsareforgeneralpurposepoweramplificationandswitchingsuchasoutputordriverstagesinapplicationssuchasswitchingregulators,convertersandpoweramplifiers. Features ?LowCollector?EmitterSatu

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MJB45H11T4

Complementary Power Transistors D2PAK for Surface Mount

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MJB45H11T4G

Complementary Power Transistors D2PAK for Surface Mount

Complementarypowertransistorsareforgeneralpurposepower amplificationandswitchingsuchasoutputordriverstagesin applicationssuchasswitchingregulators,convertersandpower amplifiers. Features ?LowCollector?EmitterSaturationVoltage? VCE(sat)=1.0V(Max)@8.0A ?F

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MJB45H11T4G

Complementary Power Transistors D2PAK for Surface Mount

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MJB45H11T4G

Complementary Power Transistors

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MJB45H11T4G

包裝:卷帶(TR)剪切帶(CT)Digi-Reel? 得捷定制卷帶 封裝/外殼:TO-263-3,D2Pak(2 引線 + 接片),TO-263AB 類別:分立半導體產(chǎn)品 晶體管 - 雙極性晶體管(BJT)- 單個 描述:TRANS PNP 80V 10A D2PAK

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MJD45H11T4

Complementarypowertransistors

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

MJD45H11T4

SILICONPOWERTRANSISTORS

Designedforgeneralpurposepowerandswitchingsuchasoutputordriverstagesinapplicationssuchasswitchingregulators,converters,andpoweramplifiers. Features ?Pb?FreePackagesareAvailable ?LeadFormedforSurfaceMountApplicationinPlasticSleeves (NoSuffix) ?Stra

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MJD45H11T4

SILICONPOWERTRANSISTORS8AMPERES80VOLTS20WATTS

ComplementaryPowerTransistors DPAKForSurfaceMountApplications ...forgeneralpurposepowerandswitchingsuchasoutputordriverstagesinapplicationssuchasswitchingregulators,converters,andpoweramplifiers. ?LeadFormedforSurfaceMountApplicationinPlasticS

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MJD45H11T4

ComplementaryPowerTransistors

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MJD45H11T4-A

Complementarypowertransistors

MJD44H11T4-AMJD44H11-->NPN MJD45H11T4-AMJD45H11-->PNP Description Thedevicesaremanufacturedinlowvoltagemultiepitaxialplanartechnology.Theyareintendedforgeneralpurposelinearandswitchingapplications. Features ■Thedevicesarequalifiedforautomotiveapp

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

MJD45H11T4G

ComplementaryPowerTransistors

ComplementaryPowerTransistors DPAKForSurfaceMountApplications Designedforgeneralpurposepowerandswitchingsuchasoutputordriverstagesinapplicationssuchasswitchingregulators,converters,andpoweramplifiers. Features ?LeadFormedforSurfaceMountApplicationin

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MJD45H11T4G

ComplementaryPowerTransistors

Designedforgeneralpurposepowerandswitchingsuchasoutputor driverstagesinapplicationssuchasswitchingregulators,converters, andpoweramplifiers. Features ?LeadFormedforSurfaceMountApplicationinPlasticSleeves (NoSuffix) ?StraightLeadVersioninPlasticSleeves(“

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MJD45H11T4G

SILICONPOWERTRANSISTORS

Designedforgeneralpurposepowerandswitchingsuchasoutputordriverstagesinapplicationssuchasswitchingregulators,converters,andpoweramplifiers. Features ?Pb?FreePackagesareAvailable ?LeadFormedforSurfaceMountApplicationinPlasticSleeves (NoSuffix) ?Stra

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MJD45H11T4G

ComplementaryPowerTransistors

ONSEMION Semiconductor

安森美半導體安森美半導體公司

NJVMJB45H11T4G

ComplementaryPowerTransistors

ONSEMION Semiconductor

安森美半導體安森美半導體公司

NJVMJB45H11T4G

ComplementaryPowerTransistorsD2PAKforSurfaceMount

Complementarypowertransistorsareforgeneralpurposepower amplificationandswitchingsuchasoutputordriverstagesin applicationssuchasswitchingregulators,convertersandpower amplifiers. Features ?LowCollector?EmitterSaturationVoltage? VCE(sat)=1.0V(Max)@8.0A ?F

ONSEMION Semiconductor

安森美半導體安森美半導體公司

NJVMJD45H11T4G

ComplementaryPowerTransistors

Designedforgeneralpurposepowerandswitchingsuchasoutputor driverstagesinapplicationssuchasswitchingregulators,converters, andpoweramplifiers. Features ?LeadFormedforSurfaceMountApplicationinPlasticSleeves (NoSuffix) ?StraightLeadVersioninPlasticSleeves(“

ONSEMION Semiconductor

安森美半導體安森美半導體公司

NJVMJD45H11T4G

ComplementaryPowerTransistors

ComplementaryPowerTransistors DPAKForSurfaceMountApplications Designedforgeneralpurposepowerandswitchingsuchasoutputordriverstagesinapplicationssuchasswitchingregulators,converters,andpoweramplifiers. Features ?LeadFormedforSurfaceMountApplicationin

ONSEMION Semiconductor

安森美半導體安森美半導體公司

詳細參數(shù)

  • 型號:

    MJB45H11T4

  • 功能描述:

    兩極晶體管 - BJT 8A 80V 50W PNP

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    PNP 集電極—基極電壓

  • VCBO:

    集電極—發(fā)射極最大電壓

  • VCEO:

    - 40 V 發(fā)射極 - 基極電壓

  • VEBO:

    - 6 V

  • 增益帶寬產(chǎn)品fT:

    直流集電極/Base Gain hfe

  • Min:

    100 A

  • 安裝風格:

    SMD/SMT

  • 封裝/箱體:

    PowerFLAT 2 x 2

供應(yīng)商型號品牌批號封裝庫存備注價格
ON/安森美
24+
TO-263
505348
免費送樣原盒原包現(xiàn)貨一手渠道聯(lián)系
詢價
ON
24+
D2PAK3LEAD
8866
詢價
ON
23+
TO-263
11846
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
詢價
FAGOR
23+
TO220F
69820
終端可以免費供樣,支持BOM配單!
詢價
ON/安森美
23+
TO-263
10000
公司只做原裝正品
詢價
ON/安森美
22+
TO-263
6000
十年配單,只做原裝
詢價
ON/安森美
23+
TO-263
13000
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
詢價
ON/安森美
23+
TO-263
6000
原裝正品,支持實單
詢價
ON
2022+
D2PAK-3 / TO-263-2
38550
全新原裝 支持表配單 中國著名電子元器件獨立分銷
詢價
ON/安森美
22+
TO-263
25000
只做原裝進口現(xiàn)貨,專注配單
詢價
更多MJB45H11T4供應(yīng)商 更新時間2025-1-11 17:06:00