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MJE3055T

POWER TRANSISTORS(10A,60V,75W)

COMPLEMENTARYSILICONPOWERTRANSISTORS.

MOSPECMospec Semiconductor

統(tǒng)懋統(tǒng)懋半導(dǎo)體股份有限公司

MJE3055T

10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 VOLTS 75 WATTS

ComplementarySiliconPlasticPowerTransistors ...designedforuseingeneral–purposeamplifierandswitchingapplications. ?DCCurrentGainSpecifiedto10Amperes ?HighCurrentGain—BandwidthProduct— fT=2.0MHz(Min)@IC=500mAdc

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MJE3055T

SILICON EPITAXIAL PLANAR TRANSISTOR

GENERALDESCRIPTION Complementary,highpowertransistorsinaplasticenvelope,primarilyforuseinaudioandgeneralpurpose

WINGSWing Shing Computer Components

永盛電子永盛電子(香港)有限公司

MJE3055T

NPN (GENERAL PURPOSE AND SWITCHING APPLICATIONS)

GENERALPUPOSEANDSWITCHINGAPPLICATIONS DCCURRENTGAINSPECIFIEDTO10AMPERES HighCurrentGain-BandwidthProduct(fT=25°C)

SamsungSamsung semiconductor

三星三星半導(dǎo)體

MJE3055T

General Purpose and Switching Applications

GeneralPurposeandSwitchingApplications ?DCCurrentGainSpecifiedtoIC=10A ?HighCurrentGain-BandwidthProduct:fT=2MHz(Min.)

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

MJE3055T

COMPLEMENTARY SILICON POWER TRANSISTORS

■STMicroelectronicsPREFERRED SALESTYPES ■COMPLEMENTARYPNP-NPNDEVICES DESCRIPTION TheMJE3055TisasiliconEpitaxial-BaseNPN transistorinJedecTO-220package.Itis intendedforpowerswitchingcircuitsand general-purposeamplifiers.Thecomplementary PNPtypeisMJE2955T.

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

MJE3055T

HIGH VOLTAGE TRANSISTOR

HIGHVOLTAGETRANSISTOR DESCRIPTION TheUTCMJE3055Tisdesignedforgeneralpurposeofamplifierandswitchingapplications.

UTCUnisonic Technologies

友順友順科技股份有限公司

MJE3055T

TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

Description Designedforgeneralpurposeamplifierandswitchingapplications.

DCCOM

Dc Components

MJE3055T

Complementary Silicon Plastic Power Transistors

10AMPERECOMPLEMENTARYSILICONPOWERTRANSISTORS60VOLTS?75WATTS MJE2955T(PNP) MJE3055T(NPN) Thesedevicesaredesignedforuseingeneral?purposeamplifierandswitchingapplications. Features ?DCCurrentGainSpecifiedto10A ?HighCurrentGain?BandwidthProduct?fT=2.0MHz(Min

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJE3055T

Complementary Silicon Power Ttransistors

DESCRIPTION Itisintentedforuseinpoweramplifierandswitchingapplications.

TGS

Tiger Electronic Co.,Ltd

MJE3055T

COMPLEMENTARY SILICON POWER TRANSISTORS

DESCRIPTION TheMJE3055Tisasiliconepitaxial-baseNPNtransistorinJedecTO-220package.Itisintendedforpowerswitchingcircuitsandgeneral-purposeamplifiers.ThecomplementaryPNPtypeisMJE2955T. ■SGS-THOMSONPREFERREDSALESTYPES ■COMPLEMENTARYPNP-NPNDEVICES

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

MJE3055T

isc Silicon NPN Power Transistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage-:V(BR)CEO=60V(Min) ·HighDCCurrentGain-:hFE=20-100@IC=4A ·ComplementtoTypeMJE2955T APPLICATIONS ·Designedforuseingeneral-purposeamplifierandswitchingapplications.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MJE3055T

Silicon NPN Power Transistors

DESCRIPTION ·WithTO-220package ·ComplementtotypeMJE2955T ·DCcurrentgain-hFE=20–70@IC=4Adc ·Collector–emittersaturationvoltage-VCE(sat)=1.1Vdc(Max)@IC=4Adc APPLICATIONS ·Designedforgeneral–purpose switchingandamplifierapplications.

SAVANTIC

Savantic, Inc.

MJE3055T

Silicon NPN transistor in a TO-220 Plastic Package.

Descriptions SiliconNPNtransistorinaTO-220PlasticPackage. Features LargeDCcurrent(IC=10A),highfT(fT≥2Mhz). Applications Generalpurposeandswitchingapplications.

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

藍(lán)箭電子佛山市藍(lán)箭電子股份有限公司

MJE3055T

PLASTIC POWER TRANSISTORS

PLASTICPOWERTRANSISTORS WithexcellentSafeOperatingArea,idealforHi-FiAmplifierandSwitchingRegulatorApplications

CDIL

Continental Device India Limited

MJE3055T

COMPLEMENTARY SILICON POWER TRANSISTORS

COMPLEMENTARYSILICONPOWERTRANSISTORS ...designedforuseingeneral-purposeamplifierandswitchingapplications FEATURES: *PowerDissipation-PD=75W?Tc=25°C *DCCurrentGainhFE=20-100?lc=4.0A *vCE(isrt)=1-1V(Max.)?lc=4.0A,IB=400mA

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

MJE3055T

COMPLEMENTARY SILICON POWER TRANSISTORS

PowerTransistors

CentralCentral Semiconductor Corp

美國中央半導(dǎo)體

MJE3055T

Silicon NPN Power Transistors

SAVANTIC

Savantic, Inc.

MJE3055T

HIGH VOLTAGE TRANSISTOR

UTCUnisonic Technologies

友順友順科技股份有限公司

MJE3055T

TO-220 - Power Transistors and Darlingtons

RECTRON

Rectron Semiconductor

產(chǎn)品屬性

  • 產(chǎn)品編號：

    MJE3055T

  • 制造商：

    onsemi

  • 類別：

    分立半導(dǎo)體產(chǎn)品 > 晶體管 - 雙極性晶體管（BJT）- 單個

  • 包裝：

    散裝

  • 晶體管類型：

    NPN

  • 不同?Ib、Ic 時?Vce 飽和壓降（最大值）：

    8V @ 3.3A，10A

  • 電流 - 集電極截止（最大值）：

    700μA

  • 不同?Ic、Vce?時 DC 電流增益 (hFE)（最小值）：

    20 @ 4A，4V

  • 頻率 - 躍遷：

    2MHz

  • 工作溫度：

    -55°C ~ 150°C（TJ）

  • 安裝類型：

    通孔

  • 封裝/外殼：

    TO-220-3

  • 供應(yīng)商器件封裝：

    TO-220

  • 描述：

    TRANS NPN 60V 10A TO220

供應(yīng)商型號品牌批號封裝庫存備注價格
ST(意法半導(dǎo)體)
23+
TO-220
942
原廠訂貨渠道,支持BOM配單一站式服務(wù)
 詢價
M
24+
TO 220
157380
明嘉萊只做原裝正品現(xiàn)貨
 詢價
ST/意法
21+
NA
65250
只做原裝,假一罰十
 詢價
ST/意法
21+
TO220
28000
原廠原裝貨/代理渠道
 詢價
FSC
21+
TO-220
800
十年信譽,只做原裝,有掛就有現(xiàn)貨!
 詢價
STM
21+
TO-220-3
52050
原裝正品 有掛有貨
 詢價
ST/意法
22+
TO-220
2769
絕對原裝!公司現(xiàn)貨!
 詢價
ST/意法
1639+
TO-220
1034
原裝正品 可含稅交易
 詢價
STM
19+
22050
TO-220-3
 詢價
ST(意法半導(dǎo)體)
23+
TO-220
10000
只做原裝現(xiàn)貨 假一賠萬
 詢價
更多MJE3055T供應(yīng)商 更新時間2025-1-11 23:00:00

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