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IXTH10N60

10 AMP, 600V, 0.55-ohm / 0.7-ohm

10AMP,600V,0.55Ω/0.7Ω

IXYS

IXYS Corporation

IXTH10N60

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent–ID=10A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.7Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconve

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IXTI10N60P

PolarHVPowerMOSFET

PolarHV?PowerMOSFET N-ChannelEnhancementMode AvalancheRated Features ?Internationalstandardpackages ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance -easytodriveandtoprotect Advantages ?Easytomount ?Spacesavings ?Highpowerdensity

IXYS

IXYS Corporation

IXTM10N60

10AMP,600V,0.55-ohm/0.7-ohm

10AMP,600V,0.55Ω/0.7Ω

IXYS

IXYS Corporation

IXTP10N60P

PolarHVPowerMOSFET

PolarHV?PowerMOSFET N-ChannelEnhancementMode AvalancheRated Features ?Internationalstandardpackages ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance -easytodriveandtoprotect Advantages ?Easytomount ?Spacesavings ?Highpowerdensity

IXYS

IXYS Corporation

IXTP10N60P

N-ChannelEnhancementMode

PolarHV?PowerMOSFET N-ChannelEnhancementMode AvalancheRated Features ?Internationalstandardpackages ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance -easytodriveandtoprotect Advantages ?Easytomount ?Spacesavings ?Highpowerdensity

IXYS

IXYS Corporation

IXTP10N60P

iscN-ChannelMOSFETTransistor

?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤740m?@VGS=10V ?Fullycharacterizedavalanchevoltageandcurrent ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation ?APPLICATION ?DC/DCConverter ?Switch-ModeandResonant-

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IXTP10N60PM

PolarHVPowerMOSFET

PolarHV?PowerMOSFET(ElectricallyIsolatedTab) N-ChannelEnhancementMode AvalancheRated Features ?Plasticovermoldedtabforelectricalisolation ?Internationalstandardpackage ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance -easytodriveandtoprotect

IXYS

IXYS Corporation

IXTP10N60PM

iscN-ChannelMOSFETTransistor

?FEATURES ?DrainSourceVoltage- :VDSS=600V(Min) ?Staticdrain-sourceon-resistance :RDS(on)≤0.74?@VGS=10V ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATION ?DC/DCConverter ?Idealforhigh-frequen

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

JCS10N60BT

N-CHANNELMOSFET

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

華微電子吉林華微電子股份有限公司

JCS10N60BT-O-B-N-B

N-CHANNELMOSFET

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

華微電子吉林華微電子股份有限公司

JCS10N60C

LEDpowersupplies

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

華微電子吉林華微電子股份有限公司

JCS10N60CT-O-C-N-B

N-CHANNELMOSFET

FEATURES Lowgatecharge LowCrss(typical20pF) Fastswitching 100avalanchetested Improveddv/dtcapability RoHSproduct APPLICATIONS Highefficiencyswitchmodepowersupplies Electroniclampballastsbasedonhalfbridge UPS

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

華微電子吉林華微電子股份有限公司

JCS10N60FC-O-F-N-B

LEDpowersupplies

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

華微電子吉林華微電子股份有限公司

JCS10N60FT-O-F-N-B

N-CHANNELMOSFET

FEATURES Lowgatecharge LowCrss(typical20pF) Fastswitching 100avalanchetested Improveddv/dtcapability RoHSproduct APPLICATIONS Highefficiencyswitchmodepowersupplies Electroniclampballastsbasedonhalfbridge UPS

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

華微電子吉林華微電子股份有限公司

JCS10N60T

N-CHANNELMOSFET

FEATURES Lowgatecharge LowCrss(typical20pF) Fastswitching 100avalanchetested Improveddv/dtcapability RoHSproduct APPLICATIONS Highefficiencyswitchmodepowersupplies Electroniclampballastsbasedonhalfbridge UPS

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

華微電子吉林華微電子股份有限公司

JMP10N60B

JJWJieJie Microelectronics Co., Ltd.

捷捷微江蘇捷捷微電子股份有限公司

PDF上傳者:深圳市溢航科技有限公司

K10N60

FastIGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmCondiode

FastIGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmitterControlledDiode ●75lowerEoffcomparedtopreviousgenerationcombinedwithlowconductionlosses ●Shortcircuitwithstandtime–10μs ●Designedfor: ??-Motorcontrols ??-Inverter ●NPT-Technologyfor600Va

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

KF10N60F

NCHANNELMOSFIELDEFFECTTRANSISTOR

KECKEC CORPORATION

KEC株式會(huì)社

KF10N60F

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforactivepowerfactorcorrectionandswitchingmodepowersupplies. FEATURES ?VDSS=600V,ID

KECKEC CORPORATION

KEC株式會(huì)社

詳細(xì)參數(shù)

  • 型號(hào):

    IXTH10N60

  • 功能描述:

    TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 10A I(D) | TO-247

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
IXYS
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
詢價(jià)
IXYS
24+
TO-247
2100
公司大量全新現(xiàn)貨 隨時(shí)可以發(fā)貨
詢價(jià)
IXYS
24+
TO-247
1300
詢價(jià)
IXYS
23+
TO-3P
5000
原裝正品,假一罰十
詢價(jià)
IXYS/艾賽斯
24+
TO3P
58000
全新原廠原裝正品現(xiàn)貨,可提供技術(shù)支持、樣品免費(fèi)!
詢價(jià)
IXYS/艾賽斯
23+
MODULE
10000
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種
詢價(jià)
24+
8866
詢價(jià)
IXYS
9536-
30
公司優(yōu)勢(shì)庫(kù)存 熱賣中!
詢價(jià)
IXYS/艾賽斯
TO-3P
22+
6000
十年配單,只做原裝
詢價(jià)
IXYS/艾賽斯
23+
TO-3P
6000
原裝正品,支持實(shí)單
詢價(jià)
更多IXTH10N60供應(yīng)商 更新時(shí)間2024-12-27 9:00:00