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IXTM10N60

10 AMP, 600V, 0.55-ohm / 0.7-ohm

10AMP,600V,0.55Ω/0.7Ω

IXYS

IXYS Corporation

IXTP10N60P

PolarHVPowerMOSFET

PolarHV?PowerMOSFET N-ChannelEnhancementMode AvalancheRated Features ?Internationalstandardpackages ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance -easytodriveandtoprotect Advantages ?Easytomount ?Spacesavings ?Highpowerdensity

IXYS

IXYS Corporation

IXTP10N60P

N-ChannelEnhancementMode

PolarHV?PowerMOSFET N-ChannelEnhancementMode AvalancheRated Features ?Internationalstandardpackages ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance -easytodriveandtoprotect Advantages ?Easytomount ?Spacesavings ?Highpowerdensity

IXYS

IXYS Corporation

IXTP10N60P

iscN-ChannelMOSFETTransistor

?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤740m?@VGS=10V ?Fullycharacterizedavalanchevoltageandcurrent ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation ?APPLICATION ?DC/DCConverter ?Switch-ModeandResonant-

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXTP10N60PM

PolarHVPowerMOSFET

PolarHV?PowerMOSFET(ElectricallyIsolatedTab) N-ChannelEnhancementMode AvalancheRated Features ?Plasticovermoldedtabforelectricalisolation ?Internationalstandardpackage ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance -easytodriveandtoprotect

IXYS

IXYS Corporation

IXTP10N60PM

iscN-ChannelMOSFETTransistor

?FEATURES ?DrainSourceVoltage- :VDSS=600V(Min) ?Staticdrain-sourceon-resistance :RDS(on)≤0.74?@VGS=10V ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATION ?DC/DCConverter ?Idealforhigh-frequen

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

JCS10N60BT

N-CHANNELMOSFET

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

華微電子吉林華微電子股份有限公司

JCS10N60BT-O-B-N-B

N-CHANNELMOSFET

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

華微電子吉林華微電子股份有限公司

JCS10N60C

LEDpowersupplies

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

華微電子吉林華微電子股份有限公司

JCS10N60CT-O-C-N-B

N-CHANNELMOSFET

FEATURES Lowgatecharge LowCrss(typical20pF) Fastswitching 100avalanchetested Improveddv/dtcapability RoHSproduct APPLICATIONS Highefficiencyswitchmodepowersupplies Electroniclampballastsbasedonhalfbridge UPS

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

華微電子吉林華微電子股份有限公司

JCS10N60FC-O-F-N-B

LEDpowersupplies

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

華微電子吉林華微電子股份有限公司

JCS10N60FT-O-F-N-B

N-CHANNELMOSFET

FEATURES Lowgatecharge LowCrss(typical20pF) Fastswitching 100avalanchetested Improveddv/dtcapability RoHSproduct APPLICATIONS Highefficiencyswitchmodepowersupplies Electroniclampballastsbasedonhalfbridge UPS

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

華微電子吉林華微電子股份有限公司

JCS10N60T

N-CHANNELMOSFET

FEATURES Lowgatecharge LowCrss(typical20pF) Fastswitching 100avalanchetested Improveddv/dtcapability RoHSproduct APPLICATIONS Highefficiencyswitchmodepowersupplies Electroniclampballastsbasedonhalfbridge UPS

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

華微電子吉林華微電子股份有限公司

JMP10N60B

JJWJieJie Microelectronics Co., Ltd.

捷捷微江蘇捷捷微電子股份有限公司

PDF上傳者：深圳市溢航科技有限公司

K10N60

FastIGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmCondiode

FastIGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmitterControlledDiode ●75lowerEoffcomparedtopreviousgenerationcombinedwithlowconductionlosses ●Shortcircuitwithstandtime–10μs ●Designedfor: ??-Motorcontrols ??-Inverter ●NPT-Technologyfor600Va

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

KF10N60F

NCHANNELMOSFIELDEFFECTTRANSISTOR

KECKEC CORPORATION

KEC株式會社

KF10N60F

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforactivepowerfactorcorrectionandswitchingmodepowersupplies. FEATURES ?VDSS=600V,ID

KECKEC CORPORATION

KEC株式會社

KF10N60F

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforactivepowerfactorcorrectionandswitchingmodepowersupplies. FEATURES ?VDSS=600V,ID

KECKEC CORPORATION

KEC株式會社

KF10N60FR

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,fastreverserecoverytime,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforactivepowerfactorcorrectionandswitchingmodepowersupplies

KECKEC CORPORATION

KEC株式會社

KF10N60P

NCHANNELMOSFIELDEFFECTTRANSISTOR

KECKEC CORPORATION

KEC株式會社

詳細(xì)參數(shù)

  • 型號：

    IXTM10N60

  • 功能描述：

    TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 10A I(D) | TO-204AC

供應(yīng)商型號品牌批號封裝庫存備注價格
IXYS
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費送樣
 詢價
IXYS
24+
TO-3
102
詢價
23+
10000
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
 詢價
IXYS
2022+
TO-204AA,TO-3
38550
全新原裝 支持表配單 中國著名電子元器件獨立分銷
 詢價
IXYS
20+
TO-3
35830
原裝優(yōu)勢主營型號-可開原型號增稅票
 詢價
IXYS
22+
TO263-7
30000
只做原裝
 詢價
IXYS
21+
CAN
12588
原裝正品,自己庫存 假一罰十
 詢價
IXYS/艾賽斯
專業(yè)鐵帽
TO-3
120
原裝鐵帽專營,代理渠道量大可訂貨
 詢價
23+
原廠標(biāo)準(zhǔn)封裝
8000
只做原裝現(xiàn)貨
 詢價
23+
原廠標(biāo)準(zhǔn)封裝
7000
詢價
更多IXTM10N60供應(yīng)商 更新時間2024-12-25 13:53:00

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