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IXTI10N60P

PolarHV Power MOSFET

PolarHV?PowerMOSFET N-ChannelEnhancementMode AvalancheRated Features ?Internationalstandardpackages ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance -easytodriveandtoprotect Advantages ?Easytomount ?Spacesavings ?Highpowerdensity

IXYS

IXYS Corporation

IXTM10N60

10AMP,600V,0.55-ohm/0.7-ohm

10AMP,600V,0.55Ω/0.7Ω

IXYS

IXYS Corporation

IXTP10N60P

PolarHVPowerMOSFET

PolarHV?PowerMOSFET N-ChannelEnhancementMode AvalancheRated Features ?Internationalstandardpackages ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance -easytodriveandtoprotect Advantages ?Easytomount ?Spacesavings ?Highpowerdensity

IXYS

IXYS Corporation

IXTP10N60P

N-ChannelEnhancementMode

PolarHV?PowerMOSFET N-ChannelEnhancementMode AvalancheRated Features ?Internationalstandardpackages ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance -easytodriveandtoprotect Advantages ?Easytomount ?Spacesavings ?Highpowerdensity

IXYS

IXYS Corporation

IXTP10N60P

iscN-ChannelMOSFETTransistor

?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤740m?@VGS=10V ?Fullycharacterizedavalanchevoltageandcurrent ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation ?APPLICATION ?DC/DCConverter ?Switch-ModeandResonant-

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IXTP10N60PM

PolarHVPowerMOSFET

PolarHV?PowerMOSFET(ElectricallyIsolatedTab) N-ChannelEnhancementMode AvalancheRated Features ?Plasticovermoldedtabforelectricalisolation ?Internationalstandardpackage ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance -easytodriveandtoprotect

IXYS

IXYS Corporation

IXTP10N60PM

iscN-ChannelMOSFETTransistor

?FEATURES ?DrainSourceVoltage- :VDSS=600V(Min) ?Staticdrain-sourceon-resistance :RDS(on)≤0.74?@VGS=10V ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATION ?DC/DCConverter ?Idealforhigh-frequen

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

JCS10N60BT

N-CHANNELMOSFET

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

華微電子吉林華微電子股份有限公司

JCS10N60BT-O-B-N-B

N-CHANNELMOSFET

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

華微電子吉林華微電子股份有限公司

JCS10N60C

LEDpowersupplies

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

華微電子吉林華微電子股份有限公司

JCS10N60CT-O-C-N-B

N-CHANNELMOSFET

FEATURES Lowgatecharge LowCrss(typical20pF) Fastswitching 100avalanchetested Improveddv/dtcapability RoHSproduct APPLICATIONS Highefficiencyswitchmodepowersupplies Electroniclampballastsbasedonhalfbridge UPS

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

華微電子吉林華微電子股份有限公司

JCS10N60FC-O-F-N-B

LEDpowersupplies

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

華微電子吉林華微電子股份有限公司

JCS10N60FT-O-F-N-B

N-CHANNELMOSFET

FEATURES Lowgatecharge LowCrss(typical20pF) Fastswitching 100avalanchetested Improveddv/dtcapability RoHSproduct APPLICATIONS Highefficiencyswitchmodepowersupplies Electroniclampballastsbasedonhalfbridge UPS

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

華微電子吉林華微電子股份有限公司

JCS10N60T

N-CHANNELMOSFET

FEATURES Lowgatecharge LowCrss(typical20pF) Fastswitching 100avalanchetested Improveddv/dtcapability RoHSproduct APPLICATIONS Highefficiencyswitchmodepowersupplies Electroniclampballastsbasedonhalfbridge UPS

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

華微電子吉林華微電子股份有限公司

JMP10N60B

JJWJieJie Microelectronics Co., Ltd.

捷捷微江蘇捷捷微電子股份有限公司

PDF上傳者:深圳市溢航科技有限公司

K10N60

FastIGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmCondiode

FastIGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmitterControlledDiode ●75lowerEoffcomparedtopreviousgenerationcombinedwithlowconductionlosses ●Shortcircuitwithstandtime–10μs ●Designedfor: ??-Motorcontrols ??-Inverter ●NPT-Technologyfor600Va

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

KF10N60F

NCHANNELMOSFIELDEFFECTTRANSISTOR

KECKEC CORPORATION

KEC株式會(huì)社

KF10N60F

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforactivepowerfactorcorrectionandswitchingmodepowersupplies. FEATURES ?VDSS=600V,ID

KECKEC CORPORATION

KEC株式會(huì)社

KF10N60F

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforactivepowerfactorcorrectionandswitchingmodepowersupplies. FEATURES ?VDSS=600V,ID

KECKEC CORPORATION

KEC株式會(huì)社

KF10N60FR

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,fastreverserecoverytime,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforactivepowerfactorcorrectionandswitchingmodepowersupplies

KECKEC CORPORATION

KEC株式會(huì)社

詳細(xì)參數(shù)

  • 型號(hào):

    IXTI10N60P

  • 功能描述:

    MOSFET 10.0 Amps 600 V 0.74 Ohm Rds

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
IXYS
24+
TO-262(i2-Pac)
8866
詢價(jià)
IXYS
23+
TO-262
11846
一級(jí)代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
詢價(jià)
IXYS
22+
TO2623 Long Leads I2Pak TO262A
9000
原廠渠道,現(xiàn)貨配單
詢價(jià)
IXYS
21+
TO2623 Long Leads I2Pak TO262A
13880
公司只售原裝,支持實(shí)單
詢價(jià)
IXYS
23+
TO2623 Long Leads I2Pak TO262A
9000
原裝正品,支持實(shí)單
詢價(jià)
IXYS
2022+
TO-262-3,長(zhǎng)引線,I2Pak,TO-26
38550
全新原裝 支持表配單 中國(guó)著名電子元器件獨(dú)立分銷
詢價(jià)
IXYS/艾賽斯
23+
TO-262(i2-Pac)
10000
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種
詢價(jià)
IXYS
1503+
TO-247
3000
就找我吧!--邀您體驗(yàn)愉快問(wèn)購(gòu)元件!
詢價(jià)
ixys
2023+
TO-247
80000
一級(jí)代理/分銷渠道價(jià)格優(yōu)勢(shì) 十年芯程一路只做原裝正品
詢價(jià)
IXYS/艾賽斯
23+
ISO247?
59580
原裝正品 華強(qiáng)現(xiàn)貨
詢價(jià)
更多IXTI10N60P供應(yīng)商 更新時(shí)間2024-12-27 15:30:00