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IXKC25N80C

N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Electrically Isolated Back Surface

N-ChannelEnhancementMode LowRDSon,highVDSSMOSFET ElectricallyIsolatedBackSurface Features ?SiliconchiponDirect-Copper-Bondsubstrate -highpowerdissipation -isolatedmountingsurface -2500Velectricalisolation ?3rdgenerationCoolMOS?1)powerMOSFET -high

IXYS

IXYS Corporation

IXFK25N80

HiPerFETPowerMOSFETs

IXYS

IXYS Corporation

IXFK25N80

HiPerFETPowerMOSFETs

HiPerFET?PowerMOSFETs N-ChannelEnhancementModeAvalancheRated,Highdv/dt,Lowtrr Features ?Internationalstandardpackages ?JEDECTO-264AA,epoxymeetUL94V-0,flammabilityclassification ?miniBLOC,withAluminiumnitrideisolation ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilic

IXYS

IXYS Corporation

IXFK25N80

HiPerFETTMPowerMOSFETs

HiPerFET?PowerMOSFETs N-ChannelEnhancementModeAvalancheRated,Highdv/dt,Lowtrr Features ?Internationalstandardpackages ?JEDECTO-264AA,epoxymeetUL94V-0,flammabilityclassification ?miniBLOC,withAluminiumnitrideisolation ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilic

IXYS

IXYS Corporation

IXFK25N80

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=25A@TC=25℃ ·DrainSourceVoltage- :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.35.Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFN25N80

HiPerFETPowerMOSFETs

HiPerFET?PowerMOSFETs N-ChannelEnhancementModeAvalancheRated,Highdv/dt,Lowtrr Features ?Internationalstandardpackages ?JEDECTO-264AA,epoxymeetUL94V-0,flammabilityclassification ?miniBLOC,withAluminiumnitrideisolation ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilic

IXYS

IXYS Corporation

IXFN25N80

HiPerFETPowerMOSFETs

IXYS

IXYS Corporation

IXFN25N80

HiPerFETTMPowerMOSFETs

HiPerFET?PowerMOSFETs N-ChannelEnhancementModeAvalancheRated,Highdv/dt,Lowtrr Features ?Internationalstandardpackages ?JEDECTO-264AA,epoxymeetUL94V-0,flammabilityclassification ?miniBLOC,withAluminiumnitrideisolation ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilic

IXYS

IXYS Corporation

IXKG25N80C

CoolMOSPowerMOSFETISO264

IXYS

IXYS Corporation

IXKR25N80C

AdvancedTechnicalInformationCoolMOSPowerMOSFETinISOPLUS247Package

IXYS

IXYS Corporation

詳細參數(shù)

  • 型號：

    IXKC25N80C

  • 功能描述：

    MOSFET 25 Amps 800V 0.15 Rds

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
IXYS
23+
TO-220
11846
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
 詢價
IXYS
1931+
N/A
18
加我qq或微信，了解更多詳細信息,體驗一站式購物
 詢價
IXYS
1809+
TO-220
326
就找我吧!--邀您體驗愉快問購元件!
 詢價
IXYS/艾賽斯
23+
ISOPLUS220
10000
公司只做原裝正品
 詢價
IXYS
22+
NA
18
加我QQ或微信咨詢更多詳細信息,
 詢價
IXYS
22+
ISOPLUS220?
9000
原廠渠道,現(xiàn)貨配單
 詢價
IXYS
21+
ISOPLUS220?
13880
公司只售原裝,支持實單
 詢價
IXYS/艾賽斯
23+
ISOPLUS22
5000
一級代理原廠VIP渠道,專注軍工、汽車、醫(yī)療、工業(yè)、
 詢價
IXYS
23+
ISOPLUS220?
9000
原裝正品，支持實單
 詢價
IXYS
2022+
ISOPLUS220?
38550
全新原裝 支持表配單 中國著名電子元器件獨立分銷
 詢價
更多IXKC25N80C供應(yīng)商 更新時間2024-12-25 10:41:00

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