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IXKH47N60C

CoolMOS??1) Power MOSFET

CoolMOS?1)PowerMOSFET LowRDSon,highVDSS SuperjunctionMOSFET Features ?3rdgenerationSuperjunctionpowerMOSFET -highblockingcapability -lowestresistance -avalancheratedforunclampedinductiveswitching(UIS) -lowthermalresistanceduetoreducedchipthic

IXYS

IXYS Corporation

IXKH47N60C

isc N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

PCFC47N60FW

DESIGN/PROCESSCHANGENOTIFICATION

Description SuperFET?IIMOSFETisFairchildSemiconductor?’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

SIHG47N60AE

ESeriesPowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHG47N60AE

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

SIHG47N60AEF

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

SIHG47N60AEF

EFSeriesPowerMOSFETWithFastBodyDiode

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHG47N60E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=47A@TC=25℃ ·DrainSourceVoltage-VDSS=650V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=64mΩ(Max)@VGS=10V DESCRIPTION ·SwitchModePowerSupply(SMPS) ·UninterruptiblePowerSupply(UPS) ·PowerFactorCorrection(PFC)

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

SIHG47N60E

ESeriesPowerMOSFET

FEATURES ?Lowfigure-of-merit(FOM)RonxQg ?Lowinputcapacitance(Ciss) ?Reducedswitchingandconductionlosses ?Ultralowgatecharge(Qg) ?Avalancheenergyrated(UIS) ?Materialcategorization:fordefinitionsofcompliance ??pleaseseewww.vishay.com/doc?99912 APPLICATIONS ?

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHG47N60E

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

SIHG47N60EF

ESeriesPowerMOSFETwithFastBodyDiode

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHG47N60EF

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

SIHW47N60E

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

SIHW47N60E

ESeriesPowerMOSFET

FEATURES ?Lowfigure-of-merit(FOM)RonxQg ?Lowinputcapacitance(Ciss) ?Reducedswitchingandconductionlosses ?Ultralowgatecharge(Qg) ?Avalancheenergyrated(UIS) ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 APPLICATIONS ?

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHW47N60E

ESeriesPowerMOSFET

FEATURES ?Lowfigure-of-merit(FOM)RonxQg ?Lowinputcapacitance(Ciss) ?Reducedswitchingandconductionlosses ?Ultralowgatecharge(Qg) ?Avalancheenergyrated(UIS) ?Materialcategorization:fordefinitionsofcompliancepleaseseewww.vishay.com/doc?99912 APPLICATIONS ?Swi

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHW47N60EF

EFSeriesPowerMOSFETwithFastBodyDiode

FEATURES ?FastbodydiodeMOSFETusingEseries technology ?Reducedtrr,Qrr,andIRRM ?Lowfigure-of-merit(FOM)RonxQg ?Lowinputcapacitance(Ciss) ?IncreasedrobustnessduetolowQrr ?Ultralowgatecharge(Qg) ?Avalancheenergyrated(UIS) ?Materialcategorization:fordef

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHW47N60EF

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

SIHW47N60EF

EFSeriesPowerMOSFETwithFastBodyDiode

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SPW47N60CFD

N-ChannelMOSFETTransistor

DESCRITION ?HighPeakCurrentCapability FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤83m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

SPW47N60CFD

CoolMOSPowerTransistor

Features ?Newrevolutionaryhighvoltagetechnology ?Intrinsicfast-recoverybodydiode ?Extremelylowreverserecoverycharge ?Ultralowgatecharge ?Extremedv/dtrated ?Highpeakcurrentcapability ?Periodicavalancherated ?Qualifiedforindustrialgradeapplicationsaccording

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

詳細(xì)參數(shù)

  • 型號(hào)：

    IXKH47N60C

  • 功能描述：

    MOSFET 47 Amps 600V 70 Rds

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
IXYS
24+
TO-247AD
30000
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IXYS/艾賽斯
17+
TO-247
31518
原裝正品 可含稅交易
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24+
8866
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IXYS
2020+
TO-247
80000
只做自己庫(kù)存,全新原裝進(jìn)口正品假一賠百,可開13%增
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IXYS
18+
TO-247
2050
公司大量全新原裝 正品 隨時(shí)可以發(fā)貨
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IXYS
1931+
N/A
18
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IXYS
1809+
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326
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INFINEO
21+
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1523
公司現(xiàn)貨,不止網(wǎng)上數(shù)量!原裝正品,假一賠十!
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IXYS/艾賽斯
21+
TO-247
5000
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IXYS/艾賽斯
23+
TO-247
10000
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更多IXKH47N60C供應(yīng)商 更新時(shí)間2024-12-25 11:05:00

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