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IXKC40N60C

CoolMOS Power MOSFET ISOPLUS220

Features ●SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -2500Velectricalisolation ●2NDgenerationCoolMOSpowerMOSFET -Highblockingcapability -Lowonresistance -Avalancheratedforunclampedinductive

IXYS

IXYS Corporation

IXKN40N60

CoolMOSPowerMOSFET

IXYS

IXYS Corporation

IXKN40N60C

CoolMOSPowerMOSFET

IXYS

IXYS Corporation

IXKR40N60

CoolMOSPowerMOSFETinISOPLUS247Package

CoolMOSPowerMOSFETinISOPLUS247?Package N-ChannelEnhancementMode LowRDSon,HighVDSSMOSFET PackagewithElectricallyIsolatedBase Features ●ISOPLUS247packagewithDCBBase -Electricalisolationtowardstheheatsink -Lowcouplingcapacitancetotheheatsinkfor

IXYS

IXYS Corporation

IXKR40N60C

CoolMOSPowerMOSFETinISOPLUS247Package

CoolMOSPowerMOSFETinISOPLUS247?Package N-ChannelEnhancementMode LowRDSon,HighVDSSMOSFET PackagewithElectricallyIsolatedBase Features ●ISOPLUS247packagewithDCBBase -Electricalisolationtowardstheheatsink -Lowcouplingcapacitancetotheheatsinkfor

IXYS

IXYS Corporation

IXSH40N60

HighSpeedIGBT

ShortCircuitSOACapability. 40N60,40N60A

IXYS

IXYS Corporation

IXSH40N60

LowVCE(sat)IGBT,HighSpeedIGBT

ShortCircuitSOACapability. 40N60,40N60A

IXYS

IXYS Corporation

IXSH40N60A

IGBT

FEATURES ·LowSaturationVoltage:VCE(sat)=3.0VMax.@IC=40A ·Highcurrenthandlingcapability ·LowPowerLoss APPLICATIONS ·ACmotorspeedcontrol ·Uninterruptiblepowersupplies(UPS) ·Welding

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXSH40N60A

LowVCE(sat)IGBT,HighSpeedIGBT

ShortCircuitSOACapability. 40N60,40N60A

IXYS

IXYS Corporation

IXSH40N60B

HighSpeedIGBT

ShortCircuitSOACapability. 40N60,40N60A

IXYS

IXYS Corporation

IXSM40N60

LowVCE(sat)IGBT,HighSpeedIGBT

ShortCircuitSOACapability. 40N60,40N60A

IXYS

IXYS Corporation

IXSM40N60A

LowVCE(sat)IGBT,HighSpeedIGBT

ShortCircuitSOACapability. 40N60,40N60A

IXYS

IXYS Corporation

IXST40N60B

HighSpeedIGBT

ShortCircuitSOACapability. 40N60,40N60A

IXYS

IXYS Corporation

KGF40N60KDA

KECFieldStopTrenchIGBTsofferlowswitchinglosses,highenergyefficiencyandshortcircuitruggedness.

KECKEC CORPORATION

KEC株式會社

KGF40N60PA

Highspeedswitching

KECKEC CORPORATION

KEC株式會社

KGT40N60KDA

Highspeedswitching

KECKEC CORPORATION

KEC株式會社

MGY40N60

InsulatedGateBipolarTransistor

ThisInsulatedGateBipolarTransistor(IGBT)usesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–blockingcapability.ShortcircuitratedIGBT’sarespecificallysuitedforapplicationsrequiringaguaranteedshortcircuitwithstandtimesuchasMotorControlDriv

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MGY40N60D

InsulatedGateBipolarTransistorwithAnti-ParallelDiode

ThisInsulatedGateBipolarTransistor(IGBT)isco–packagedwithasoftrecoveryultra–fastrectifierandusesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–blockingcapability.ShortcircuitratedIGBT’sarespecificallysuitedforapplicationsrequiringaguara

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

NGTB40N60FLWG

IGBT

ONSEMION Semiconductor

安森美半導體安森美半導體公司

NGTB40N60IHLWG

InsulatedGateBipolarTransistor(IGBT)

ONSEMION Semiconductor

安森美半導體安森美半導體公司

詳細參數(shù)

  • 型號:

    IXKC40N60C

  • 功能描述:

    MOSFET 28 Amps 600V 0.1 Rds

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
IXYS
23+
NA
19960
只做進口原裝,終端工廠免費送樣
詢價
IXYS
23+
TO-220
11846
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
詢價
IXYS
1931+
N/A
18
加我qq或微信,了解更多詳細信息,體驗一站式購物
詢價
IXYS
1809+
TO-220
326
就找我吧!--邀您體驗愉快問購元件!
詢價
IXYS
22+
NA
18
加我QQ或微信咨詢更多詳細信息,
詢價
IXYS
22+
ISOPLUS220?
9000
原廠渠道,現(xiàn)貨配單
詢價
IXYS
21+
ISOPLUS220?
13880
公司只售原裝,支持實單
詢價
IXYS
23+
ISOPLUS220?
9000
原裝正品,支持實單
詢價
IXYS
2022+
ISOPLUS220?
38550
全新原裝 支持表配單 中國著名電子元器件獨立分銷
詢價
IXYS(艾賽斯)
23+
N/A
7500
IXYS(艾賽斯)全系列在售
詢價
更多IXKC40N60C供應(yīng)商 更新時間2025-1-11 11:06:00