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首頁 >IXFV30N60PS>規(guī)格書列表

零件編號	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
IXFV30N60PS	文件：330.12 Kbytes Page：5 Pages	PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode PolarHV?HiPerFETPowerMOSFET N-ChannelEnhancementMode FastRecoveryDiode AvalancheRated Features ●FastRecoverydiode ●UnclampedInductiveSwitching(UIS)rated ●Internationalstandardpackages ●Lowpackageinductance -easytodriveandtoprotect	IXYS IXYS Corporation	IXYS
IXGH30N60	文件：64.75 Kbytes Page：2 Pages	LowVCE(sat)IGBT,HighspeedIGBT Features Internationalstandardpackages 2ndgenerationHDMOS?process LowVCE(sat) -forlowon-stateconductionlosses Highcurrenthandlingcapability MOSGateturn-on -drivesimplicity Voltageratingguaranteedathightemperature(125°C)	IXYS IXYS Corporation	IXYS
IXGH30N60A	文件：64.75 Kbytes Page：2 Pages	LowVCE(sat)IGBT,HighspeedIGBT Features Internationalstandardpackages 2ndgenerationHDMOS?process LowVCE(sat) -forlowon-stateconductionlosses Highcurrenthandlingcapability MOSGateturn-on -drivesimplicity Voltageratingguaranteedathightemperature(125°C)	IXYS IXYS Corporation	IXYS
IXGH30N60B	文件：53.49 Kbytes Page：2 Pages	HiPerFASTTMIGBT Features ?Internationalstandardpackages JEDECTO-268surface mountableandJEDECTO-247AD ?Highcurrenthandlingcapability ?LatestgenerationHDMOS?process ?MOSGateturn-on -drivesimplicity	IXYS IXYS Corporation	IXYS
IXGM30N60	文件：64.75 Kbytes Page：2 Pages	LowVCE(sat)IGBT,HighspeedIGBT Features Internationalstandardpackages 2ndgenerationHDMOS?process LowVCE(sat) -forlowon-stateconductionlosses Highcurrenthandlingcapability MOSGateturn-on -drivesimplicity Voltageratingguaranteedathightemperature(125°C)	IXYS IXYS Corporation	IXYS
IXGM30N60A	文件：64.75 Kbytes Page：2 Pages	LowVCE(sat)IGBT,HighspeedIGBT Features Internationalstandardpackages 2ndgenerationHDMOS?process LowVCE(sat) -forlowon-stateconductionlosses Highcurrenthandlingcapability MOSGateturn-on -drivesimplicity Voltageratingguaranteedathightemperature(125°C)	IXYS IXYS Corporation	IXYS
IXSH30N60	文件：241.71 Kbytes Page：2 Pages	LowVCE(sat)IGBT,HighSpeedIGBT LowVCE(sat)IGBTHighSpeedIGBT ShortCircuitSOACapability Features ?Internationalstandardpackages ?GuaranteedShortCircuitSOAcapability ?LowVCE(sat) -forlowon-stateconductionlosses ?Highcurrenthandlingcapability ?MOSGateturn-on -drivesimplicity ?Fast	IXYS IXYS Corporation	IXYS
IXSH30N60A	文件：241.71 Kbytes Page：2 Pages	LowVCE(sat)IGBT,HighSpeedIGBT LowVCE(sat)IGBTHighSpeedIGBT ShortCircuitSOACapability Features ?Internationalstandardpackages ?GuaranteedShortCircuitSOAcapability ?LowVCE(sat) -forlowon-stateconductionlosses ?Highcurrenthandlingcapability ?MOSGateturn-on -drivesimplicity ?Fast	IXYS IXYS Corporation	IXYS
IXSH30N60B	文件：131.5 Kbytes Page：4 Pages	HighSpeedIGBT HighSpeedIGBT ShortCircuitSOACapability Features ●Internationalstandardpackages ●ShortCircuitSOAcapability ●HighfrequencyIGBT ●NewgenerationHDMOSTMprocess Applications ●ACmotorspeedcontrol ●DCservoandrobotdrives ●DCchoppers ●Uninterruptiblepowersupplies	IXYS IXYS Corporation	IXYS
IXSH30N60C	文件：131.5 Kbytes Page：4 Pages	HighSpeedIGBT HighSpeedIGBT ShortCircuitSOACapability Features ●Internationalstandardpackages ●ShortCircuitSOAcapability ●HighfrequencyIGBT ●NewgenerationHDMOSTMprocess Applications ●ACmotorspeedcontrol ●DCservoandrobotdrives ●DCchoppers ●Uninterruptiblepowersupplies	IXYS IXYS Corporation	IXYS
IXSM30N60	文件：241.71 Kbytes Page：2 Pages	LowVCE(sat)IGBT,HighSpeedIGBT LowVCE(sat)IGBTHighSpeedIGBT ShortCircuitSOACapability Features ?Internationalstandardpackages ?GuaranteedShortCircuitSOAcapability ?LowVCE(sat) -forlowon-stateconductionlosses ?Highcurrenthandlingcapability ?MOSGateturn-on -drivesimplicity ?Fast	IXYS IXYS Corporation	IXYS
IXSM30N60A	文件：241.71 Kbytes Page：2 Pages	LowVCE(sat)IGBT,HighSpeedIGBT LowVCE(sat)IGBTHighSpeedIGBT ShortCircuitSOACapability Features ?Internationalstandardpackages ?GuaranteedShortCircuitSOAcapability ?LowVCE(sat) -forlowon-stateconductionlosses ?Highcurrenthandlingcapability ?MOSGateturn-on -drivesimplicity ?Fast	IXYS IXYS Corporation	IXYS
IXST30N60B	文件：131.5 Kbytes Page：4 Pages	HighSpeedIGBT HighSpeedIGBT ShortCircuitSOACapability Features ●Internationalstandardpackages ●ShortCircuitSOAcapability ●HighfrequencyIGBT ●NewgenerationHDMOSTMprocess Applications ●ACmotorspeedcontrol ●DCservoandrobotdrives ●DCchoppers ●Uninterruptiblepowersupplies	IXYS IXYS Corporation	IXYS
IXST30N60C	文件：131.5 Kbytes Page：4 Pages	HighSpeedIGBT HighSpeedIGBT ShortCircuitSOACapability Features ●Internationalstandardpackages ●ShortCircuitSOAcapability ●HighfrequencyIGBT ●NewgenerationHDMOSTMprocess Applications ●ACmotorspeedcontrol ●DCservoandrobotdrives ●DCchoppers ●Uninterruptiblepowersupplies	IXYS IXYS Corporation	IXYS
IXTH30N60P	文件：357.81 Kbytes Page：6 Pages	PolarHVTMPowerMOSFETN-ChannelEnhancementModeAvalancheRated N-ChannelEnhancementModeAvalancheRated Features lFastRecoverydiode lUnclampedInductiveSwitching(UIS)rated lInternationalstandardpackages lLowpackageinductance -easytodriveandtoprotect	IXYS IXYS Corporation	IXYS
IXTH30N60P	文件：372.45 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=30A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.24Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
IXTQ30N60P	文件：323.32 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC
IXTQ30N60P	文件：357.81 Kbytes Page：6 Pages	PolarHVTMPowerMOSFETN-ChannelEnhancementModeAvalancheRated N-ChannelEnhancementModeAvalancheRated Features lFastRecoverydiode lUnclampedInductiveSwitching(UIS)rated lInternationalstandardpackages lLowpackageinductance -easytodriveandtoprotect	IXYS IXYS Corporation	IXYS
IXTT30N60P	文件：357.81 Kbytes Page：6 Pages	PolarHVTMPowerMOSFETN-ChannelEnhancementModeAvalancheRated N-ChannelEnhancementModeAvalancheRated Features lFastRecoverydiode lUnclampedInductiveSwitching(UIS)rated lInternationalstandardpackages lLowpackageinductance -easytodriveandtoprotect	IXYS IXYS Corporation	IXYS
IXTV30N60P	文件：276.95 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司	ISC

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詳細參數(shù)

型號：
IXFV30N60PS
功能描述：
MOSFET 600V 30A
RoHS：
否
制造商：
STMicroelectronics
晶體管極性：
N-Channel
汲極/源極擊穿電壓：
650 V
閘/源擊穿電壓：
25 V
漏極連續(xù)電流：
130 A 電阻汲極/源極
RDS（導通）：
0.014 Ohms
配置：
Single
安裝風格：
Through Hole
封裝/箱體：
Max247
封裝：
Tube

供應商	型號	品牌	批號	封裝	庫存	備注	價格
深圳市博浩通科技有限公司	IXFV30N60PS	IXYS	23+	PLUS220SMD	10277	全新原裝	詢價
深圳市華來深電子有限公司	IXFV30N60PS	IXYS	23+	TO-220	11846	一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十	詢價
深圳市國宇半導體科技有限公司	IXFV30N60PS	IXYS/艾賽斯	23+	PLUS220-SMD	10000	公司只做原裝正品	詢價
深圳市河鋒鑫科技有限公司	IXFV30N60PS	IXYS	22+	PLUS220SMD	9000	原廠渠道,現(xiàn)貨配單	詢價
深圳市芯福林電子科技有限公司	IXFV30N60PS	IXYS	21+	PLUS220SMD	13880	公司只售原裝,支持實單	詢價
易創(chuàng)佳業(yè)科技（深圳）有限公司	IXFV30N60PS	IXYS/艾賽斯	23+	PLUS220-SMD	6000	原裝正品，支持實單	詢價
深圳市鵬順微電子科技有限公司	IXFV30N60PS	IXYS	2022+	PLUS-220SMD	38550	全新原裝支持表配單中國著名電子元器件獨立分銷	詢價
深圳市能元時代電子有限公司	IXFV30N60PS	IXYS	23+	TO-220	70774	##公司主營品牌長期供應100%原裝現(xiàn)貨可含稅提供技術(shù)	詢價
深圳市創(chuàng)新跡電子有限公司	IXFV30N60PS	IXYS/艾賽斯	22+	PLUS220-SMD	25000	只做原裝進口現(xiàn)貨,專注配單	詢價
深圳市宏捷佳電子科技有限公司	IXFV30N60PS	IXYS	24+	PLUSTO-220-SMD	12300	獨立分銷商公司只做原裝誠心經(jīng)營免費試樣正品保證	詢價

更多IXFV30N60PS供應商更新時間2024-10-26 14:02:00

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