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零件編號	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
IXFM26N50	文件：158 Kbytes Page：4 Pages	HiPerFET Power MOSFETs HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.	IXYS IXYS Corporation	IXYS
IXFM26N50	文件：295.27 Kbytes Page：8 Pages	HIPERFET Power MOSFTETs HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.	IXYS IXYS Corporation	IXYS
IXFM26N50	文件：316.82 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent:ID=26A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.2Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Switchingapplications	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IXFP26N50	文件：295.67 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=26A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=250mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andlaserdrives.	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IXFQ26N50	文件：312.52 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=26A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=250mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IXFR26N50	文件：329.88 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=26A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=200mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IXFR26N50	文件：34.31 Kbytes Page：2 Pages	HiPerFETPowerMOSFETsISOPLUS247(ElectricallyIsolatedBackSurface) (ElectricallyIsolatedBackSurface) N-ChannelEnhancementModeHighdV/dt,Lowtrr,HDMOS?Family Features ?SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -2500Velectricalisolation ?Lowdraintotabcapacitance(	IXYS IXYS Corporation	IXYS
IXFR26N50Q	文件：79.56 Kbytes Page：2 Pages	HiPerFETPowerMOSFETsISOPLUS247(ElectricallyIsolatedBackSurface) (ElectricallyIsolatedBackSurface) N-ChannelEnhancementModeHighdV/dt,Lowtrr,HDMOS?Family Features SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -2500Velectricalisolation Lowdraintotabcapacitance(	IXYS IXYS Corporation	IXYS
IXFT26N50	文件：158 Kbytes Page：4 Pages	HiPerFETPowerMOSFETs HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.	IXYS IXYS Corporation	IXYS
IXFT26N50Q	文件：134.05 Kbytes Page：4 Pages	HiPerFETPowerMOSFETs N-ChannelEnhancementModeAvalancheRated,LowQg,Highdv/dt Features IXYSadvancedlowQgprocess Internationalstandardpackages LowRDS(on) UnclampedInductiveSwitching(UIS)rated Fastswitching MoldingepoxiesmeetUL94V-0flammabilityclassification	IXYS IXYS Corporation	IXYS
IXFV26N50P	文件：211.72 Kbytes Page：5 Pages	AvalancheRatedFastInstrinsicDiode VDSS=500V ID25=26A RDS(on)≤230m? trr≤200ns AvalancheRatedFastInstrinsicDiode Features ●Internationalstandardpackages ●Fastintrinsicdiode ●UnclampedInductiveSwitching(UIS)rated ●Lowpackageinductance -easytodriveandtoprotect Advantages ●Easytomou	IXYS IXYS Corporation	IXYS
IXFV26N50PS	文件：211.72 Kbytes Page：5 Pages	AvalancheRatedFastInstrinsicDiode VDSS=500V ID25=26A RDS(on)≤230m? trr≤200ns AvalancheRatedFastInstrinsicDiode Features ●Internationalstandardpackages ●Fastintrinsicdiode ●UnclampedInductiveSwitching(UIS)rated ●Lowpackageinductance -easytodriveandtoprotect Advantages ●Easytomou	IXYS IXYS Corporation	IXYS
IXTC26N50P	文件：571.66 Kbytes Page：5 Pages	PolarHVPowerMOSFET ElectricallyIsolatedTab,N-ChannelEnhancementMode,AvalancheRated Features SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -2500Velectricalisolation Lowdraintotabcapacitance( Applications DC-DCconverters	IXYS IXYS Corporation	IXYS
IXTC26N50P	文件：296.32 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IXTQ26N50P	文件：269.8 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IXTQ26N50P	文件：343.91 Kbytes Page：5 Pages	PolarHVTMPowerMOSFET	IXYS IXYS Corporation	IXYS
IXTQ26N50P	文件：343.91 Kbytes Page：5 Pages	PolarHVPowerMOSFET	IXYS IXYS Corporation	IXYS
IXTT26N50P	文件：343.91 Kbytes Page：5 Pages	PolarHVPowerMOSFET	IXYS IXYS Corporation	IXYS
IXTV26N50P	文件：293.92 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IXTV26N50P	文件：343.91 Kbytes Page：5 Pages	PolarHVPowerMOSFET	IXYS IXYS Corporation	IXYS

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詳細(xì)參數(shù)

型號：
IXFM26N50
制造商：
IXYS
制造商全稱：
IXYS Corporation
功能描述：
HIPERFET Power MOSFTETs

供應(yīng)商	型號	品牌	批號	封裝	庫存	備注	價格
深圳市永貝爾科技有限公司	IXFM26N50	IXYS	23+	NA	19960	只做進(jìn)口原裝,終端工廠免費(fèi)送樣	詢價
深圳市一線半導(dǎo)體有限公司	IXFM35N30	IXYS	24+	TO-3	128		詢價
貿(mào)澤芯城（深圳）電子科技有限公司	IXFM35N30	IXYS/艾賽斯	23+	TO-204	10000	原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種	詢價
深圳市鵬順微電子科技有限公司	IXFM35N30	IXYS	2022+	TO-204AE	38550	全新原裝支持表配單中國著名電子元器件獨(dú)立分銷	詢價
深圳市勤思達(dá)科技有限公司	IXFM40N30	IXYS場效應(yīng)			100	原裝現(xiàn)貨,價格優(yōu)惠	詢價
深圳市昊創(chuàng)電子有限公司	IXFM40N30	IXYS/艾賽斯	專業(yè)鐵帽	TO-3	50	原裝鐵帽專營,代理渠道量大可訂貨	詢價
中天科工半導(dǎo)體（深圳）有限公司	IXFM40N30	IXYS	20+	TO-3	35830	原裝優(yōu)勢主營型號-可開原型號增稅票	詢價
深圳市維爾達(dá)電子有限公司	IXFM40N30	IXYS	2023+	TO-204	80000	一級代理/分銷渠道價格優(yōu)勢十年芯程一路只做原裝正品	詢價
瀚佳科技(深圳)有限公司	IXFM40N30		24+	MODULE	2100	公司大量全新現(xiàn)貨隨時可以發(fā)貨	詢價
深圳市能元時代電子有限公司	IXFM40N30	IXYS	23+	TO-3	64196	##公司主營品牌長期供應(yīng)100%原裝現(xiàn)貨可含稅提供技術(shù)	詢價

更多IXFM26N50供應(yīng)商更新時間2024-12-26 15:35:00

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