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IXFN180N07

HiPerFET Power MOSFETs

HiPerFET?PowerMOSFETs N-ChannelEnhancementMode AvalancheRated,Highdv/dt,Lowtrr Features ?Internationalstandardpackages ?miniBLOCwithAluminiumnitrideisolation ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?UnclampedInductiveSwitching(UIS)rated

IXYS

IXYS Corporation

IXFK180N07

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=180A@TC=25℃ ·DrainSourceVoltage-VDSS=70V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=6mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IXFK180N07

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=180A@TC=25℃ ·DrainSourceVoltage :VDSS=70V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=6mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IXFK180N07

PowerMOSFETs

IXYS

IXYS Corporation

IXFK180N07

HiPerFETPowerMOSFETs

HiperFETPowerMOSFETs N-ChannelEnhancementMode AvalancheRated FastIntrinsicRectifier Features ?InternationalStandardPackages ?AvalancheRated ?LowIntrinsicGateResistance ?LowPackageInductance ?FastIntrinsicRectifier ?LowRDS(on)andQG Advantages ?HighPowerDensi

IXYS

IXYS Corporation

IXFR180N07

HiPerFETPowerMOSFETsISOPLUS247

SingleMOSFETDie Features ?SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -2500Velectricalisolation ?Lowdraintotabcapacitance(

IXYS

IXYS Corporation

IXFR180N07

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=180A@TC=25℃ ·DrainSourceVoltage-VDSS=70V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=6mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IXFX180N07

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=180A@TC=25℃ ·DrainSourceVoltage- :VDSS=70V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=6mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconve

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IXFX180N07

PowerMOSFETs

IXYS

IXYS Corporation

IXFX180N07

HiPerFETPowerMOSFETs

HiperFETPowerMOSFETs N-ChannelEnhancementMode AvalancheRated FastIntrinsicRectifier Features ?InternationalStandardPackages ?AvalancheRated ?LowIntrinsicGateResistance ?LowPackageInductance ?FastIntrinsicRectifier ?LowRDS(on)andQG Advantages ?HighPowerDensi

IXYS

IXYS Corporation

詳細(xì)參數(shù)

  • 型號(hào)：

    IXFN180N07

  • 功能描述：

    MOSFET 180 Amps 70V 0.007 Rds

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
IXYS
19+/20+
SOT-227B
1000
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 詢價(jià)
德國(guó)IXYS艾塞斯
23+
MOUDLE
12000
原裝正品假一罰十支持實(shí)單
 詢價(jià)
IXYS
10+
主營(yíng)模塊
85
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IXYS
23+
模塊
360
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IXYS
23+
MOSFETN-CH70V180ASOT-227
1690
專(zhuān)業(yè)代理銷(xiāo)售半導(dǎo)體模塊,能提供更多數(shù)量
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IXYS
23+
模塊
5000
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IXYS
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
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IXYS
專(zhuān)業(yè)模塊
MODULE
8513
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IXYS
24+
2173
公司大量全新正品 隨時(shí)可以發(fā)貨
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IXYS
24+
SOT227
269
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更多IXFN180N07供應(yīng)商 更新時(shí)間2024-12-27 13:01:00

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