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IXFN20N120P

Polar Power MOSFET HiPerFET

Polar?PowerMOSFETHiPerFET? N-ChannelEnhancementModeAvalancheRated FastIntrinsicDiode Features ?Internationalstandardpackage ?EncapsulatingepoxymeetsUL94V-0,flammabilityclassification ?miniBLOCwithAluminiumnitrideisolation ?Fastrecoverydiode ?UnclampedInductive

IXYS

IXYS Corporation

IXFR20N120

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=13A@TC=25℃ ·DrainSourceVoltage-VDSS=1200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=630mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXFR20N120P

PolarPowerMOSFETHiPerFET

IXYS

IXYS Corporation

IXFX20N120

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=20A@TC=25℃ ·DrainSourceVoltage- :VDSS=1200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.75Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IXFX20N120

HiPerFETPowerMOSFETs

IXYS

IXYS Corporation

IXFX20N120P

PolarPowerMOSFETHiPerFET

IXYS

IXYS Corporation

IXGA20N120

IGBT

Features ?Internationalstandardpackages JEDECTO-220ABandTO-263AA ?Highcurrenthandlingcapability ?MOSGateturn-on -drivesimplicity Applications ?ACmotorspeedcontrol ?DCservoandrobotdrives ?DCchoppers ?Uninterruptiblepowersupplies(UPS) ?Switch-modeand

IXYS

IXYS Corporation

IXGH20N120

IGBT

VCES=1200V IC25=40A VCE(sat)=2.5V tfi(typ)=380ns Features ?Internationalstandardpackages JEDECTO-247andTO-268 ?Highcurrenthandlingcapability ?MOSGateturn-on -drivesimplicity Applications ?ACmotorspeedcontrol ?DCservoan

IXYS

IXYS Corporation

IXGH20N120B

HighVoltageIGBT

VCES=1200V IC25=40A VCE(sat)=3.4V tfi(typ)=160ns Features ?HighVoltageIGBTforresonantpowersupplies -Inductionheating -Ricecookers ?Internationalstandardpackages JEDECTO-268surfaceand JEDECTO-247AD ?Lowswitchinglosses,

IXYS

IXYS Corporation

IXGP20N120

IGBT

Features ?Internationalstandardpackages JEDECTO-220ABandTO-263AA ?Highcurrenthandlingcapability ?MOSGateturn-on -drivesimplicity Applications ?ACmotorspeedcontrol ?DCservoandrobotdrives ?DCchoppers ?Uninterruptiblepowersupplies(UPS) ?Switch-modeand

IXYS

IXYS Corporation

IXGP20N120B

HighVoltageIGBTwithDiode

IXYS

IXYS Corporation

IXGQ20N120B

HighVoltageIGBTwithDiode

Features ●Internationalstandardpackage ●IGBTandanti-parallelFREDfor resonantpowersupplies -Inductionheating -Ricecookers ●MOSGateturn-on -drivesimplicity ●FastRecoveryExpitaxialDiode(FRED) -softrecoverywithlowIRM Advantages ●Savesspace(two

IXYS

IXYS Corporation

IXGT20N120

IGBT

VCES=1200V IC25=40A VCE(sat)=2.5V tfi(typ)=380ns Features ?Internationalstandardpackages JEDECTO-247andTO-268 ?Highcurrenthandlingcapability ?MOSGateturn-on -drivesimplicity Applications ?ACmotorspeedcontrol ?DCservoan

IXYS

IXYS Corporation

IXGT20N120B

HighVoltageIGBT

VCES=1200V IC25=40A VCE(sat)=3.4V tfi(typ)=160ns Features ?HighVoltageIGBTforresonantpowersupplies -Inductionheating -Ricecookers ?Internationalstandardpackages JEDECTO-268surfaceand JEDECTO-247AD ?Lowswitchinglosses,

IXYS

IXYS Corporation

MGW20N120

InsulatedGateBipolarTransistor

InsulatedGateBipolarTransistor N–ChannelEnhancement–ModeSiliconGate ThisInsulatedGateBipolarTransistor(IGBT)usesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–blockingcapability.ShortcircuitratedIGBT’sarespecificallysuitedforapplicationsre

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MGW20N120

InsulatedGateBipolarTransistor

InsulatedGateBipolarTransistor N–ChannelEnhancement–ModeSiliconGate ThisInsulatedGateBipolarTransistor(IGBT)usesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–blockingcapability.ShortcircuitratedIGBT’sarespecificallysuitedforapplicationsre

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MGY20N120D

InsulatedGateBipolarTransistorwithAnti-ParallelDiode

ThisInsulatedGateBipolarTransistor(IGBT)isco–packagedwithasoftrecoveryultra–fastrectifierandusesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–blockingcapability.ShortcircuitratedIGBT’sarespecificallysuitedforapplicationsrequiringaguara

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MGY20N120D

InsulatedGateBipolarTransistorwithAnti-ParallelDiode

ThisInsulatedGateBipolarTransistor(IGBT)isco–packagedwithasoftrecoveryultra–fastrectifierandusesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–blockingcapability.ShortcircuitratedIGBT’sarespecificallysuitedforapplicationsrequiringaguara

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

NGTB20N120IHLWG

Incorporatedintothedeviceisaruggedco??ackagedfreewheelingdiodewithalowforwardvoltage.

ONSEMION Semiconductor

安森美半導體安森美半導體公司

NGTB20N120IHRWG

IGBTwithMonolithicFreeWheelingDiode

ONSEMION Semiconductor

安森美半導體安森美半導體公司

詳細參數(shù)

  • 型號：

    IXFN20N120P

  • 功能描述：

    MOSFET 20 Amps 1200V 0.6 Rds

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應商型號品牌批號封裝庫存備注價格
IXYS
24+
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1690
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更多IXFN20N120P供應商 更新時間2024-12-27 16:21:00

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