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首頁 >IXFN24N100F>規(guī)格書列表

零件編號	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
IXFN24N100F	文件：105.16 Kbytes Page：2 Pages	HiPerRF Power MOSFETs Features ?Internationalstandardpackage ?Encapsulatingepoxymeets UL94V-0,flammabilityclassification ?miniBLOCwithAluminiumnitrideisolation ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageindu	IXYS IXYS Corporation	IXYS
IXFN24N100F	文件：108 Kbytes Page：2 Pages	HiPerRF Power MOSFETs F-Class: MegaHertz Switching N-ChannelEnhancementMode AvalancheRated,LowQg,LowIntrinsicRg HighdV/dt,Lowtrr Features ?RFcapableMOSFETs ?Doublemetalprocessforlowgateresistance ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance -easytodriveandtoprotect	IXYS IXYS Corporation	IXYS
IXFE24N100	文件：428.31 Kbytes Page：2 Pages	SingleMOSFETDie HiPerFETPowerMOSFET SingleMOSFETDie Features ?ConformstoSOT-227Boutline ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance ?FastintrinsicRectifier Applications ?DC-DCconverters ?Batte	IXYS IXYS Corporation	IXYS
IXFF24N100	文件：72.28 Kbytes Page：2 Pages	HiPerFETTMPowerMosfetinHighVoltageISOPLUSI4-PACTM Features ?HiPerFETTMtechnology -lowRDSon -lowgatechargeforhighfrequencyoperation -unclampedinductiveswitching(UIS)capability -dv/dtruggedness -fastintrinsicreversediode ?ISOPLUSI4-PAC?highvoltagepackage -isolatedbacksurface -enlargedcree	IXYS IXYS Corporation	IXYS
IXFK24N100	文件：329.04 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=24A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.39Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IXFK24N100	文件：137.63 Kbytes Page：4 Pages	HiPerFETTMPowerMOSFETs	IXYS IXYS Corporation	IXYS
IXFK24N100	文件：99.43 Kbytes Page：2 Pages	HiPerRFPowerMOSFETs HiPerFET?PowerMOSFETs N-ChannelEnhancementMode AvalancheRated FastIntrisicDiode Features ?Internationalstandardpackages ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?Avalancherated ?Lowpackageinductance ?Fastintrinsicrectifier Applications ?	IXYS IXYS Corporation	IXYS
IXFK24N100F	文件：329.07 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=24A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.39Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IXFK24N100F	文件：99.43 Kbytes Page：2 Pages	HiPerRFPowerMOSFETs HiPerFET?PowerMOSFETs N-ChannelEnhancementMode AvalancheRated FastIntrisicDiode Features ?Internationalstandardpackages ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?Avalancherated ?Lowpackageinductance ?Fastintrinsicrectifier Applications ?	IXYS IXYS Corporation	IXYS
IXFK24N100F	文件：161.07 Kbytes Page：4 Pages	HiPerRFPowerMOSFETsF-Class:MegaHertzSwitching HiPerRFTMPowerMOSFETsF-Class:MegaHertzSwitching N-ChannelEnhancementModeAvalancheRated,LowQg,LowIntrinsicRgHighdV/dt,Lowtrr Features ?RFcapableMOSFETs ?Doublemetalprocessforlowgateresistance ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance	IXYS IXYS Corporation	IXYS
IXFN24N100	文件：91.67 Kbytes Page：4 Pages	HiPerFET-TMPowerMOSFET Features ?Internationalstandardpackage ?Encapsulatingepoxymeets UL94V-0,flammabilityclassification ?miniBLOCwithAluminiumnitrideisolation ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageindu	IXYS IXYS Corporation	IXYS
IXFN24N100	文件：105.16 Kbytes Page：2 Pages	HiPerRFPowerMOSFETs Features ?Internationalstandardpackage ?Encapsulatingepoxymeets UL94V-0,flammabilityclassification ?miniBLOCwithAluminiumnitrideisolation ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageindu	IXYS IXYS Corporation	IXYS
IXFR24N100	文件：36.22 Kbytes Page：2 Pages	HiPerFETTMPowerMOSFETsISOPLUS247TM(ElectricallyIsolatedBackSurface) HiPerFET?PowerMOSFETISOPLUS247?(ElectricallyIsolatedBackSurface) N-ChannelEnhancementModeAvalancheRated Features ?SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -2500Velectricalisolation ?Lowdraintotabcapacit	IXYS IXYS Corporation	IXYS
IXFR24N100	文件：330.4 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=22A@TC=25℃ ·DrainSourceVoltage-VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=390mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IXFX24N100	文件：367.67 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=24A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.39Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IXFX24N100	文件：137.63 Kbytes Page：4 Pages	HiPerFETTMPowerMOSFETs	IXYS IXYS Corporation	IXYS
IXFX24N100	文件：139.35 Kbytes Page：4 Pages	HiPerFETPowerMOSFETs	IXYS IXYS Corporation	IXYS
IXFX24N100F	文件：161.07 Kbytes Page：4 Pages	HiPerRFPowerMOSFETsF-Class:MegaHertzSwitching HiPerRFTMPowerMOSFETsF-Class:MegaHertzSwitching N-ChannelEnhancementModeAvalancheRated,LowQg,LowIntrinsicRgHighdV/dt,Lowtrr Features ?RFcapableMOSFETs ?Doublemetalprocessforlowgateresistance ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance	IXYS IXYS Corporation	IXYS
IXFX24N100F	文件：99.43 Kbytes Page：2 Pages	HiPerRFPowerMOSFETs HiPerFET?PowerMOSFETs N-ChannelEnhancementMode AvalancheRated FastIntrisicDiode Features ?Internationalstandardpackages ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?Avalancherated ?Lowpackageinductance ?Fastintrinsicrectifier Applications ?	IXYS IXYS Corporation	IXYS
IXTX24N100	文件：103.68 Kbytes Page：4 Pages	N-ChannelEnhancementMode	IXYS IXYS Corporation	IXYS

詳細(xì)參數(shù)

型號：
IXFN24N100F
功能描述：
MOSFET
RoHS：
否
制造商：
STMicroelectronics
晶體管極性：
N-Channel
汲極/源極擊穿電壓：
650 V
閘/源擊穿電壓：
25 V
漏極連續(xù)電流：
130 A 電阻汲極/源極
RDS（導(dǎo)通）：
0.014 Ohms
配置：
Single
安裝風(fēng)格：
Through Hole
封裝/箱體：
Max247
封裝：
Tube

供應(yīng)商	型號	品牌	批號	封裝	庫存	備注	價(jià)格
深圳市斌騰達(dá)科技有限公司	IXFN24N100F	IXYS	19+/20+	SOT-227B	1000	主打產(chǎn)品價(jià)格優(yōu)惠.全新原裝正品	詢價(jià)
深圳市匯萊威科技有限公司	IXFN24N100F	IXYS/艾賽斯	19+	MODULE	1290	主打模塊,大量現(xiàn)貨供應(yīng)商QQ2355605126	詢價(jià)
深圳市永貝爾科技有限公司	IXFN24N100F	IXYS	23+	NA	19960	只做進(jìn)口原裝,終端工廠免費(fèi)送樣	詢價(jià)
深圳市振宏微科技有限公司	IXFN24N100F	N/A	23+	NA	15659	振宏微專業(yè)只做正品,假一罰百!	詢價(jià)
中天科工半導(dǎo)體（深圳）有限公司	IXFN24N100F	IXYS	專業(yè)模塊	MODULE	8513	模塊原裝主營-可開原型號增稅票	詢價(jià)
深圳市維爾達(dá)電子有限公司	IXFN24N100F	原裝IXYS	2023+	NA	80000	一級代理/分銷渠道價(jià)格優(yōu)勢十年芯程一路只做原裝正品	詢價(jià)
瀚佳科技(深圳)有限公司	IXFN24N100F	IXYS	24+		2173	公司大量全新正品隨時(shí)可以發(fā)貨	詢價(jià)
深圳市興燦科技有限公司	IXFN24N100F	IXYS	24+	SOT227	560		詢價(jià)
深圳市艾宇欣科技有限公司	IXFN24N100F	IXYS	1931+	N/A	113	加我qq或微信，了解更多詳細(xì)信息,體驗(yàn)一站式購物	詢價(jià)
深圳市科雨電子有限公司	IXFN24N100F	IXYS-RF	1809+	SOT-227	96	就找我吧!--邀您體驗(yàn)愉快問購元件!	詢價(jià)

更多IXFN24N100F供應(yīng)商更新時(shí)間2025-1-14 13:01:00

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