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IXFN150N10

HiPerFET Power MOSFETs

HiPerFETPowerMOSFETs N-ChannelEnhancementMode AvalancheRated,Highdv/dt,Lowtrr Features ●Internationalstandardpackages ●JEDECTO-264AA,epoxymeetUL94V-0,flammabilityclassification ●miniBLOCwithAluminiumnitrideisolation ●LowRDS(on)HDMOSTMprocess ●Ruggedpolysilicon

IXYS

IXYS Corporation

IXFN150N10

HiPerFET Power MOSFET

HiPerFETPowerMOSFETs N-ChannelEnhancementMode AvalancheRated,Highdv/dt,Lowtrr Features ●Internationalstandardpackages ●JEDECTO-264AA,epoxymeetUL94V-0,flammabilityclassification ●miniBLOCwithAluminiumnitrideisolation ●LowRDS(on)HDMOSTMprocess ●Ruggedpolysilicon

IXYS

IXYS Corporation

ADM150N10G

N-ChannelEnhancementModeFieldEffectTransistor

Features: ●LowGateChargeforFastSwitchingApplication ●LowRDS(ON)toMinimizeConductiveLoss ●100%EASGuaranteed ●OptimizedV(BR)DSSRuggedness ●Lead-Free,RoHSCompliant Description: TheADM150N10GseriesMOSFETsisanewtechnology,whichcombinesaninnovativesuperjunc

ADVAdvanced (Shenzhen) Electronics Co.,Ltd

愛德微愛德微(深圳)電子有限公司

ADM150N10G

N-ChannelEnhancementModeFieldEffectTransistor

Features: ●LowGateChargeforFastSwitchingApplication ●LowRDS(ON)toMinimizeConductiveLoss ●100%EASGuaranteed ●OptimizedV(BR)DSSRuggedness ●Lead-Free,RoHSCompliant Description: TheADM150N10GseriesMOSFETsisanewtechnology,whichcombinesaninnovativesuperjunc

ADVAdvanced (Shenzhen) Electronics Co.,Ltd

愛德微愛德微(深圳)電子有限公司

FDB150N10

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=57A@TC=25℃ ·DrainSourceVoltage :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=15mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FDB150N10

N-ChannelPowerTrench?MOSFET100V,57A,15m廓

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDI150N10

N-ChannelPowerTrench?MOSFET100V,57A,16m廓

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDI150N10

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=57A@TC=25℃ ·DrainSourceVoltage :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=16mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FDP150N10

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FDP150N10

N-ChannelPowerTrench?MOSFET100V,57A,15m廓

GeneralDescription ThisN-ChannelMOSFETisproducedusingFairchildSemiconductor’sadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizetheon-stateresistanceandyetmaintainsuperiorswitchingperformance. Features ?RDS(on)=12m?(Typ.)@VGS=10V,ID=49A ?Fa

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDP150N10A

N-ChannelPowerTrench?MOSFET100V,50A,15m廓

Description ThisN-ChannelMOSFETisproducedusingFairchildSemiconductor’sadvancedPowerTrench?processthathasbeentailoredtominimizetheon-stateresistancewhilemaintainingsuperiorswitchingperformance. Features ?RDS(on)=12.5mΩ(Typ.)@VGS=10V,ID=50A ?FastSwitching

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDP150N10A

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=50A@TC=25℃ ·DrainSourceVoltage :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=15mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

FIR150N10PG

N-ChannelSuperTrenchPowerMOSFET

FOSTERShenzhen Foster Semiconductor Co., Ltd.

福斯特半導(dǎo)體深圳市福斯特半導(dǎo)體有限公司

HRLD150N10K

SuperiorAvalancheRuggedTechnology

SEMIHOW

SemiHow Co.,Ltd.

HRLF150N10K

100AvalancheTested

SEMIHOW

SemiHow Co.,Ltd.

HRLP150N10K

OriginativeNewDesign

SEMIHOW

SemiHow Co.,Ltd.

LMPC150N10

N-ChannelSuperTrenchPowerMOSFET

LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd

雷卯電子上海雷卯電子科技有限公司

STE150N10

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTORINISOTOPPACKAGE

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTORINISOTOPPACKAGE ■HIGHCURRENTPOWERMODULE ■AVALANCHERUGGEDTECHNOLOGY(SEESTH60N10FORRATING) ■VERYLARGESOA-LARGEPEAKPOWERCAPABILITY ■EASYTOMOUNT ■SAMECURRENTCAPABILITYFORTHETWOSOURCETERMINALS ■EXTREMELYLOWRthJU

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

SW150N10A

N-channelTO-220MOSFET

SEMIPOWERXian Semipower Electronic Technology Co., Ltd.

芯派科技芯派科技股份有限公司

詳細(xì)參數(shù)

  • 型號：

    IXFN150N10

  • 功能描述：

    MOSFET 150 Amps 100V

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
德國IXYS艾塞斯
23+
MOUDLE
12000
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19+
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1290
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05+
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594
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IXYS
23+
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3562
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IXYS
23+
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320
全新原裝正品,量大可訂貨!可開17%增值票!價(jià)格優(yōu)勢!
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IXYS
23+
MOSFETN-CH100V150ASOT-22
1690
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100
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IXYS
23+
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5000
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23+
NA
19960
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SOT227
12500
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更多IXFN150N10供應(yīng)商 更新時(shí)間2025-1-14 15:36:00

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