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IXFK55N50F

HiPerRFTM Power MOSFETs

HiPerRF?PowerMOSFETs F-Class:MegaHertzSwitching N-ChannelEnhancementMode AvalancheRated,LowQg,LowIntrinsicRg HighdV/dt,Lowtrr Features ●RFcapableMosfets ●Ruggedpolysilicongatecellstructure ●Doublemetalprocessforlowgate resistance ●Unclamped

IXYS

IXYS Corporation

IXFK55N50F

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent–ID=55A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=85mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFN55N50

N-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=55A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=90mΩ(Max)@VGS=10V APPLICATIONS ·DC-DCConverters ·BatteryChargers ·ACandDCMotorDrives ·HighSpeedPowerSwitchingApplication

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFN55N50

HiPerFETPowerMOSFET

HiPerFET?PowerMOSFET SingleDieMOSFET Features ?Internationalstandardpackages ?Encapsulatingepoxymeets UL94V-0,flammabilityclassification ?miniBLOCwithAluminiumnitride isolation ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?Unc

IXYS

IXYS Corporation

IXFN55N50

HiPerRFPowerMOSFETs

HiPerFET?PowerMOSFET F-Class:MegaHertzSwitching N-ChannelEnhancementMode AvalancheRated,LowQg,LowIntrinsicRg HighdV/dt,Lowtrr Features ?RFcapableMosfets ?Ruggedpolysilicongatecellstructure ?Doublemetalprocessforlowgate resistance ?Unclamped

IXYS

IXYS Corporation

IXFN55N50

HiPerFETPowerMOSFET

HiPerFET?PowerMOSFET SingleDieMOSFET Features ?Internationalstandardpackages ?Encapsulatingepoxymeets UL94V-0,flammabilityclassification ?miniBLOCwithAluminiumnitride isolation ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?Unc

IXYS

IXYS Corporation

IXFN55N50F

HiPerRFPowerMOSFETs

HiPerFET?PowerMOSFET F-Class:MegaHertzSwitching N-ChannelEnhancementMode AvalancheRated,LowQg,LowIntrinsicRg HighdV/dt,Lowtrr Features ?RFcapableMosfets ?Ruggedpolysilicongatecellstructure ?Doublemetalprocessforlowgate resistance ?Unclamped

IXYS

IXYS Corporation

IXFR55N50

HiPerFET-TMPowerMOSFETsISOPLUS247-TM

HiPerFET?PowerMOSFETsISOPLUS247?(ElectricallyIsolatedBackSurface) SingleDieMOSFET Features ?SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -2500Velectricalisolation ?Lowdraintotabcapacitance(

IXYS

IXYS Corporation

IXFR55N50F

HiPerRFPowerMOSFETsF-Class:MegaHertzSwitching

VDSS=500V ID25=55A RDS(on)=90m? trr≤250ns Features ●SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -2500Velectricalisolation ●RFcapableMosfets ●Lowgatechargeandcapacitances -easiertodrive -faste

IXYS

IXYS Corporation

IXFX55N50

HiPerFETPowerMOSFET

HiPerFET?PowerMOSFET SingleDieMOSFET Features ?Internationalstandardpackages ?Encapsulatingepoxymeets UL94V-0,flammabilityclassification ?miniBLOCwithAluminiumnitride isolation ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?Unc

IXYS

IXYS Corporation

IXFX55N50

HiPerRFPowerMOSFETs

HiPerFET?PowerMOSFET F-Class:MegaHertzSwitching N-ChannelEnhancementMode AvalancheRated,LowQg,LowIntrinsicRg HighdV/dt,Lowtrr Features ?RFcapableMosfets ?Ruggedpolysilicongatecellstructure ?Doublemetalprocessforlowgate resistance ?Unclamped

IXYS

IXYS Corporation

IXFX55N50

HiPerFETPowerMOSFETs

IXYS

IXYS Corporation

IXFX55N50

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=55A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=80mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconve

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFX55N50F

HiPerRFTMPowerMOSFETs

HiPerRF?PowerMOSFETs F-Class:MegaHertzSwitching N-ChannelEnhancementMode AvalancheRated,LowQg,LowIntrinsicRg HighdV/dt,Lowtrr Features ●RFcapableMosfets ●Ruggedpolysilicongatecellstructure ●Doublemetalprocessforlowgate resistance ●Unclamped

IXYS

IXYS Corporation

詳細參數(shù)

  • 型號：

    IXFK55N50F

  • 功能描述：

    MOSFET

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
IXYS
1931+
N/A
63
加我qq或微信，了解更多詳細信息,體驗一站式購物
 詢價
IXYS-RF
1809+
TO-264
326
就找我吧!--邀您體驗愉快問購元件!
 詢價
IXYS/艾賽斯
23+
TO-264
10000
公司只做原裝正品
 詢價
IXYS
22+
NA
63
加我QQ或微信咨詢更多詳細信息,
 詢價
IXYS
22+
TO2643 TO264AA
9000
原廠渠道,現(xiàn)貨配單
 詢價
IXYS/艾賽斯
23+
TO-264
6000
原裝正品，支持實單
 詢價
IXYS-RF
2022+
TO-264-3,TO-264AA
38550
全新原裝 支持表配單 中國著名電子元器件獨立分銷
 詢價
IXYS/艾賽斯
22+
TO-264
25000
只做原裝進口現(xiàn)貨,專注配單
 詢價
IXYS
24+
TO-264
12300
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證
 詢價
IXYS/艾賽斯
23+
TO264
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
更多IXFK55N50F供應(yīng)商 更新時間2025-1-14 10:18:00

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