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IXFN55N50

HiPerRF Power MOSFETs

HiPerFET?PowerMOSFET F-Class:MegaHertzSwitching N-ChannelEnhancementMode AvalancheRated,LowQg,LowIntrinsicRg HighdV/dt,Lowtrr Features ?RFcapableMosfets ?Ruggedpolysilicongatecellstructure ?Doublemetalprocessforlowgate resistance ?Unclamped

IXYS

IXYS Corporation

IXFN55N50

HiPerFET Power MOSFET

HiPerFET?PowerMOSFET SingleDieMOSFET Features ?Internationalstandardpackages ?Encapsulatingepoxymeets UL94V-0,flammabilityclassification ?miniBLOCwithAluminiumnitride isolation ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?Unc

IXYS

IXYS Corporation

IXFN55N50

HiPerFET Power MOSFET

HiPerFET?PowerMOSFET SingleDieMOSFET Features ?Internationalstandardpackages ?Encapsulatingepoxymeets UL94V-0,flammabilityclassification ?miniBLOCwithAluminiumnitride isolation ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?Unc

IXYS

IXYS Corporation

IXFN55N50

N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=55A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=90mΩ(Max)@VGS=10V APPLICATIONS ·DC-DCConverters ·BatteryChargers ·ACandDCMotorDrives ·HighSpeedPowerSwitchingApplication

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFN55N50F

HiPerRF Power MOSFETs

HiPerFET?PowerMOSFET F-Class:MegaHertzSwitching N-ChannelEnhancementMode AvalancheRated,LowQg,LowIntrinsicRg HighdV/dt,Lowtrr Features ?RFcapableMosfets ?Ruggedpolysilicongatecellstructure ?Doublemetalprocessforlowgate resistance ?Unclamped

IXYS

IXYS Corporation

IXFR55N50

HiPerFET-TMPowerMOSFETsISOPLUS247-TM

HiPerFET?PowerMOSFETsISOPLUS247?(ElectricallyIsolatedBackSurface) SingleDieMOSFET Features ?SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -2500Velectricalisolation ?Lowdraintotabcapacitance(

IXYS

IXYS Corporation

IXFR55N50F

HiPerRFPowerMOSFETsF-Class:MegaHertzSwitching

VDSS=500V ID25=55A RDS(on)=90m? trr≤250ns Features ●SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -2500Velectricalisolation ●RFcapableMosfets ●Lowgatechargeandcapacitances -easiertodrive -faste

IXYS

IXYS Corporation

IXFX55N50

HiPerFETPowerMOSFET

HiPerFET?PowerMOSFET SingleDieMOSFET Features ?Internationalstandardpackages ?Encapsulatingepoxymeets UL94V-0,flammabilityclassification ?miniBLOCwithAluminiumnitride isolation ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?Unc

IXYS

IXYS Corporation

IXFX55N50

HiPerRFPowerMOSFETs

HiPerFET?PowerMOSFET F-Class:MegaHertzSwitching N-ChannelEnhancementMode AvalancheRated,LowQg,LowIntrinsicRg HighdV/dt,Lowtrr Features ?RFcapableMosfets ?Ruggedpolysilicongatecellstructure ?Doublemetalprocessforlowgate resistance ?Unclamped

IXYS

IXYS Corporation

IXFX55N50

HiPerFETPowerMOSFETs

IXYS

IXYS Corporation

詳細(xì)參數(shù)

  • 型號(hào)：

    IXFN55N50

  • 功能描述：

    MOSFET 55 Amps 500V 0.08 Rds

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
IXFN
23+
NA
5000
原廠授權(quán)一級(jí)代理 IGBT模塊 可控硅 晶閘管 熔斷器質(zhì)保
 詢價(jià)
IXYS
19+/20+
SOT-227B
1000
主打產(chǎn)品價(jià)格優(yōu)惠.全新原裝正品
 詢價(jià)
Littelfuse/IXYS
23+
SOT-227
7800
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。
 詢價(jià)
德國IXYS艾塞斯
23+
MOUDLE
12000
原裝正品假一罰十支持實(shí)單
 詢價(jià)
IXYS/艾賽斯
12+
MODULE
1290
主打模塊,大量現(xiàn)貨供應(yīng)商QQ2355605126
 詢價(jià)
IXYS
23+
模塊
900
全新原裝正品,量大可訂貨!可開17%增值票!價(jià)格優(yōu)勢!
 詢價(jià)
IXYS
23+
原廠原裝
1042
全新原裝現(xiàn)貨
 詢價(jià)
IXYS場效應(yīng)
100
原裝現(xiàn)貨,價(jià)格優(yōu)惠
 詢價(jià)
IXYS
23+
模塊
5000
原裝正品,假一罰十
 詢價(jià)
IXYS
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
 詢價(jià)
更多IXFN55N50供應(yīng)商 更新時(shí)間2025-3-23 13:00:00

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